Numerical modelling of InGaAs infrared photovoltaic detectors

• Autorzy: Sioma, M. , Kaniewski, J.
• Języki publikacji: EN

Abstrakty

EN

The performance of p-i-n infrared detectors has been studied theoretically. Optimization of InxGa1–xAs device structure has been performed for three compositions, x = 0.53, x = 0.82 and x = 1, which are important from the application point of view. Calculations have been performed by means of APSYS simulation program and the model based on fundamental limitations to the detector operation. The influence of layer thickness, as well as doping concentration in the active layer on zero bias resistance and detectivity of devices optimized for desired cut-off wavelength have been discussed. Additionally, the photovoltaic effect across the structure has been discussed. Finally, the influence of the ohmic contact position on photodiode parameters has been shown.

• Czasopismo: Optica Applicata
• Rocznik: 2002
• Tom: Vol. 32, nr 3
• Strony: 517-522
• Opis fizyczny: bibliogr. 13 poz.

Twórcy

autor

Sioma, M.

autor

Kaniewski, J.

• Warsaw University of Technology, ul. Koszykowa 75, 06-662 Warszawa