Heterojunction In0.53Ga0.47As/InP magnetic field sensors fabricated by molecular beam epitaxy

• Autorzy: Przesławski, T. , Wolkenberg, K. , Regiński, K. , Kaniewski, J.
• Języki publikacji: EN

Abstrakty

EN

The aim of our work is to construct magnetic field sensor (MFS) and temperature sensor (TS) based on galvanomagnetic effects. Basing on the analysis of available experimental data we chose n-type In0.53Ga0.47As on InP as a suitable material. We fabricated thin InGaAs layer (t = 4 mm) with electron mobility mH = 0.7 m2(Vs)–1 and carrier concentration nH = 2.25×1020 m–3 at room temperature. The absolute sensitivity g0 defining maximal output voltage of the Hall sensor (HS) and the current-related sensitivity g deduced from the measurement results are g0 = 1.1 VT–1 and g = 5600 WT–1, respectively. Additionally, we found magnetoresistor current sensitivity SI ~ 800 WT–1 and voltage sensitivity SV ~ 0.5 T–1 for the layer. Similarly, in the In0.53Ga0.47As/InP layer ~1 mm thick with nH = 8.5×1023 m–3 and mH ~ 0.5 m2(Vs)–1 we obtained the values of the parameters: g0 = 0.008 VT–1, g = 40 WT–1, and SI ~ 1 WT–1, SV ~ 0.05 T–1. The studies lead towards the construction of new magnetic field and/or temperature sensors on the basis of present and previously obtained as well as published experimental results.

• Czasopismo: Optica Applicata
• Rocznik: 2002
• Tom: Vol. 32, nr 3
• Strony: 511-515
• Opis fizyczny: bibliogr. 10 poz.

Twórcy

autor

Przesławski, T.

autor

Wolkenberg, K.

autor

Regiński, K.

autor

Kaniewski, J.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa