High power AlGaAs/GaAs lasers with improved optical degradation level

• Autorzy: Bugajski, M. , Zbroszczyk, M. , Sajewicz, P. , Muszalski, J.
• Języki publikacji: EN

Abstrakty

EN

Accurate numerical simulation of AlGaAs/GaAs SQW SCH lasers and MQW SCH lasers is presented. We discuss the performance of both types of lasers with regard to high power operation at 808 nm spectral band which is of interest for diode pumped Nd:YAG lasers. Design rules for above-mentioned lasers are formulated. From the analysis presented it follows that MQW SCH lasers are better suited for high power applications and exhibit a superior tolerance to inherent construction parameters variations, as well as to external operation parameters. We also test different waveguide designs. The most important conclusion is that broader waveguides are suitable for obtaining higher optical powers and generally result in higher COD (catastrophic optical degradation) level.

• Czasopismo: Optica Applicata
• Rocznik: 2002
• Tom: Vol. 32, nr 3
• Strony: 469-475
• Opis fizyczny: bibliogr. 13 poz.

Twórcy

autor

Bugajski, M.

autor

Zbroszczyk, M.

autor

Sajewicz, P.

autor

Muszalski, J.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa