Measurements of stress during ion irradiation

• Autorzy: Pieńkos, T. , Gładyszewski, L. , Chocyk, D. , Prószyński, A. , Gładyszewski, G. , Martin, F. , Jaouen, Ch.
• Języki publikacji: EN

Abstrakty

EN

The exemplary results obtained with a simple optical set-up for the measurement of curvature radius during ion implantation are presented. The Kr ion irradiation was performed for silicon substrate without a film. After the irradiation the implanted region of silicon was under compressive stress. Maximum of the stress was evidenced for a dose of 1×1014 ions/cm2. The optical set-up is very flexible and may cooperate with various apparatus

• Czasopismo: Optica Applicata
• Rocznik: 2002
• Tom: Vol. 32, nr 3
• Strony: 421-424
• Opis fizyczny: bibliogr. 7 poz.

Twórcy

autor

Pieńkos, T.

autor

Gładyszewski, L.

autor

Chocyk, D.

autor

Prószyński, A.

autor

Gładyszewski, G.

autor

Martin, F.

autor

Jaouen, Ch.

• Department of General Physics, Institute of Physics, Maria-Curie Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin