High-energy electron emission from MIS-structures

• Autorzy: Olesik, J.
• Języki publikacji: EN

Abstrakty

EN

The effects of electric field induced electron emission from complex emitters are studied. As the emitters were used thin ITO (indium tin oxide) films deposited on a glass plate. The ITO film was subjected to the bombardment by a primary electron beam or illuminated by the UV light. The field induced secondary electron emission (FISEE) was studied in the 10–7 hPa vacuum. Energy examination of the emitted electrons revealed some electrons of energy higher than Ep. The electron emission still existed due to the applied field and UV illumination after stopping the bombardment by the primary beam (field induced electron emission and photoemission – FIEE and FIPE). About 80% of the emitted electrons were found to have energy within 1–2 eV (few percent – 10 eV). The phenomenological model of the field induced emission effects was proposed. The main assumptions of the model are supported on the basis of the field induced division of the ITO film into two zones: with depleted and enhanced number of electrons.

• Czasopismo: Optica Applicata
• Rocznik: 2002
• Tom: Vol. 32, nr 3
• Strony: 409-416
• Opis fizyczny: bibliogr. 20 poz.

Twórcy

autor

Olesik, J.

• Institute of Physics, Pedagogical University of Częstochowa, al. Armii Krajowej 13/15, 42-200 Częstochowa