Effect of uniform stress on SiO2/Si interface in oxygen-implanted Si and SIMOX structures

• Autorzy: Misiuk, A. , Bryja, L. , Kątcki, J. , Ratajczak, J.
• Języki publikacji: EN

Abstrakty

EN

The effect of high temperature–hydrostatic pressure (HT–HP) treatment on SiO2/Si interface in oxygen-implanted (oxygen doses up to 2×1018 cm–2) silicon (Si:O) and reference silicon-on-insulator (SOI) samples has been investigated by the transmission electron microscopy (TEM) and the photoluminescence (PL) methods. The Si:O and SOI samples have been HT–HP treated at 1230–1570 K under argon pressure up to 1.23 GPa for 5 h. Depending on the dose of implanted oxygen and other implantation and HT–HP treatment conditions, the dispersed SiO2–x precipitates or buried SiO2 layer are created in the Si bulk. The HT–HP treatment affects the creation of dislocations and other defects at the SiO2/Si interface; this effect is related in part to a decreased misfit at the SiO2/Si boundary at HT–HP.

• Czasopismo: Optica Applicata
• Rocznik: 2002
• Tom: Vol. 32, nr 3
• Strony: 397-407
• Opis fizyczny: bibliogr. 16 poz.

Twórcy

autor

Misiuk, A.

autor

Bryja, L.

autor

Kątcki, J.

autor

Ratajczak, J.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa