Influence of the thermal annealing on hydrogen concentration in GaN layers – SIMS characterization

• Autorzy: Jakieła, R. , Jasik, A. , Strupiński, W. , Góra, K. , Kosiel, K. , Wesołowski, M.
• Języki publikacji: EN

Abstrakty

EN

The aim of this work was the investigation of the influence of different thermal annealing conditions on hydrogen concentration in GaN:Mg layers. The 0.5 mm GaN:Mg/0.5 mm GaN layers deposited on sapphire with LP MOVPE (low pressure metal organic vapour phase epitaxy) were examined. Samples were characterized with the use of SIMS (secondary ions mass spectroscopy) technique applying CAMECA IMS 6F system. Magnesium concentration in the samples determined with the use of SIMS measurement was 3×1019 and 5×1019 at/cm3. The annealing was performed using RTA (rapid thermal annealing) technique and MOVPE reactor as a furnace. Samples were annealed in temperatures ranging from 750 to 950 °C with one, two or three thermal -steps of annealing.

• Czasopismo: Optica Applicata
• Rocznik: 2002
• Tom: Vol. 32, nr 3
• Strony: 365-371
• Opis fizyczny: bibliogr. 4 poz.

Twórcy

autor

Jakieła, R.

autor

Jasik, A.

autor

Strupiński, W.

autor

Góra, K.

autor

Kosiel, K.

autor

Wesołowski, M.

• Institute of Electronic Materials Technology, ul. Wólczyńska 133, 01-919 Warszawa