Simulation of thermal properties of proton-implanted top-surface-emitting lasers. I. Analytical thermal model.

• Autorzy: Nakwaski, W. , Maćkowiak, P. , Osiński, M.
• Języki publikacji: EN

Abstrakty

EN

A comprehensive analytical thermal model of proton-implanted top-surface-emitting lasers (PITSELs) is developed. In the model reasonable distributions of all important heat-generation mechanisms are taken into account, including nonradiative recombination, reabsorption of spontaneous radiation, free-carrier absorption of laser radiation as well as both volume and barrier Joule heating. Full self-consistency between the electrical and the thermal processes has been achieved including temperature dependences of thermal conductivities, threshold current, internal and external quantum efficiencies, voltage drop at the p-n junction, electrical resistivities and absorption coefficients.

• Czasopismo: Optica Applicata
• Rocznik: 2002
• Tom: Vol. 32, nr 1-2
• Strony: 157-172
• Opis fizyczny: bibliogr. 40 poz.

Twórcy

autor

Nakwaski, W.

autor

Maćkowiak, P.

autor

Osiński, M.

• Institute of Physics, Technical University of Łódź, ul. Wólczańska 219, 93-005 Łódź