Research on Damage Mechanism of SCB Initiators under RF

• Autorzy: Chen, F. , Zhou, B. , Qin, Z, , Shen, R.

Warianty tytułu

PL

Mechanizm uszkodzenia mostkowego zapalnika półprzewodnikowego pod wpływem fal radiowych

• Języki publikacji: EN

Abstrakty

EN

In order to elucidate the response characteristic of semiconductor bridge(SCB) initiators under radio frequency(RF), RF measurement system was used to test the RF sensitivity of SCBs, after that the energy stored in a 22?F was used to activate the SCB. It is inferred from the results of Bruceton-method firing experiment that RF energy does not damage the SCB chip, but can lead to the accidental ignition of SCB initiators or change the color of normal lead styphnate(NLS). RF can also passivate SCB significantly and the all-fire voltage increases from 6.71V to 7.72V. The experimental data of X-ray photoelectron spectroscopy(XPS) analysis, directly indicated that heat generated by RF changes the valence of Pb in NLS from +2 to +4. The decomposition of NLS is responsible for the loss in sensitivity of SCBs. The research results provide a theoretical guidance for the electromagnetic compatibility(EMC) design of SCB initiators.

PL

W artykule opisano badanie oddziaływania sygnałów częstotliwości radiowej (ang. Radio Frequency) na zapalniki zbudowane z mostka półprzewodnikowego. Przedstawiono omówienie teoretyczne oraz wyniki badań eksperymentalnych.

Słowa kluczowe

PL

zapalnik; SCB; RF; NLS; XPS; EMC

EN

initiator; SCB; RF; NLS; XPS; EMC

• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2012
• Tom: R. 88, nr 11a
• Strony: 188-190
• Opis fizyczny: Bibliogr. 7 poz., tab., rys.

Twórcy

autor

Chen, F.

autor

Zhou, B.

autor

Qin, Z,

autor

Shen, R.

• School of Chemical Engineering, Nanjing University of Science and Technology,

Bibliografia

• [1] ZHU Fen-chun, XU Zhen-xiang, CHEN Xi-wu, Progress on the semiconductor bridge initiator, Acta Armamentarii, 24(2003), No. 1, 106-110
• [2] Lee Kye-Nam,Park Myung-Il,Choi Sung-Ho, Characteristics of plasma generated by polysilicon semiconductor bridge(SCB), Sensors and Actuators A, 96(2002), 252–257
• [3] ZHOU Rong, YUE Su-ge, QING Hui-qian, Study of semiconductor bridge, Journal of Semiconductors, 19(1998), No. 11, 857-860
• [4] FENG Qing-mei,ZHAO Tuan, LIU Hong-li, Applied research of EED RF sensitivity test, Technology Foundation of National Defence, (2007), No.9, 22-24
• [5] YANG Yi, LIU Wei, The Effect of RF to EED and its protection measure, Value angineering, (2010), No.17, 139-140
• [6] JIANG Rong-guang, LIU Zi-tang, Initiating explosive, Ordnance industry press(2005)
• [7] GJB5309.14-2004 Standard for ESD experiment, Beijing: Commission on science, technology and industry for national defense(2004)