Impedance of reverse biased diodes irradiated with krypton ions with energy of 250 MeV

• Autorzy: Poklonski, N. A. , Gorbachuk, N. I. , Ermakova, A. V. , Tarasik, M. I. , Shpakovski, S. V. , Filipenia, V. A. , Skuratov, V. A. , Wieck, A. , Kołtunowicz, T. N.

Warianty tytułu

PL

Impedancja diod spolaryzowanych zaporowo napromieniowanych jonami kryptonu o energii 250 MeV

• Języki publikacji: EN

Abstrakty

EN

The p+n-junction silicon diodes irradiated with krypton ions with the energy of 250 MeV were studied. The distance [delta] between the p�yn-junction boundary and calculated maximum in the distribution of the primary vacancies was about 26.4 žm. It was shown that transformations of a complex plane plot of the electric modulus at the increased reverse bias take place due to a change in the impedance ratio ZL/ZJ of the irradiation damaged layer ZL to space charge region ZJ as well as due to changes in the electron population of the energy levels of irradiation-induced defects.

PL

Przebadano diody krzemowe o typu p+n naświetlane jonami kryptonu o energii 250 MeV. Odległość [delta] między granicą złącza p+n i obliczonym maksimum w rozkładzie wakatów pierwotnych wyniosła około 26,4 žm. Wykazano, że przekształcenia zespolonej płaszczyzny modułu elektrycznego przy zwiększonej polaryzacji zaporowej złącza mogą nastąpić pod wpływem zmiany stosunku impedancji ZL/ZJ warstwy zdefektowanej promieniowaniem ZL do impedancji obszarów z ładunkiem przestrzennym ZJ, jak również ze względu na zmiany w koncentracji elektronów na poziomach energetycznych defektów powstałych poprzez promieniowanie.

Słowa kluczowe

PL

promieniowanie jonowe; dioda o złączu p-n; impedancja

EN

ion irradiation; PN junction diode; impedance

• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2012
• Tom: R. 88, nr 7a
• Strony: 312-314
• Opis fizyczny: Bibliogr. 13 poz., wykr.

Twórcy

autor

Poklonski, N. A.

autor

Gorbachuk, N. I.

autor

Ermakova, A. V.

autor

Tarasik, M. I.

autor

Shpakovski, S. V.

autor

Filipenia, V. A.

autor

Skuratov, V. A.

autor

Wieck, A.

autor

Kołtunowicz, T. N.

• Belarusian State University, Minsk, ul. Prospekt Nezavisimosti 4, 220030, Minsk, Belarus,

Bibliografia

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