Czasopismo
2012
|
R. 88, nr 4b
|
187-192
Tytuł artykułu
Autorzy
Wybrane pełne teksty z tego czasopisma
Warianty tytułu
Gate drive units for silicon carbide power transistors – solutions overview
Języki publikacji
Abstrakty
Artykuł przedstawia przegląd rozwiązań sterowników bramkowych tranzystorów mocy z węglika krzemu. Omówiono kolejno przypadki tranzystorów złączowych (JFET): normalnie załączonych a także normalnie wyłączonych oraz sterowniki prądu bazy dla tranzystorów bipolarnych (BJT). Przedstawiono także wyniki badań eksperymentalnych – przebiegi prądów i napięć zarejestrowane w trakcie testów dwupulsowych, obrazujące procesy łączeniowe dla każdego z omawianych tranzystorów.
The paper presents an overview of the gate drive units for Silicon Carbide power transistors. Solutions for two types of Junction Field Effect Transistors: normally-on and normally-off as well as base drive units for bipolar transistors (BJTs) are described. Experimental results – waveforms of the currents and voltages recorded during double-pulse tests are presented in order to illustrate switching behavior of discussed transistors.
Czasopismo
Rocznik
Tom
Strony
187-192
Opis fizyczny
Bibliogr. 70 poz., rys., tab.
Twórcy
autor
autor
autor
- Politechnika Warszawska, Instytut Sterowania i Elektroniki Przemysłowej, ul. Koszykowa 75, 00-662 Warszawa, jacek.rabkowski@isep.pw.edu.pl
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Typ dokumentu
Bibliografia
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Identyfikator YADDA
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