Modifying electrophysical properties of Si-cBN interface by introduction of ultrathin dielectric layer

• Autorzy: Firek, P. , Mroczyński, R. , Szmidt, J. , Beck, R.B. , Werbowy, A.
• Języki publikacji: EN

Abstrakty

EN

This study concerns modifications of Si-cBN interface (with and without dielectric underlayer), c-BN films produced on p-type <100> Si substrates by means of Radio Frequency (RF) CVD process. Silicon nitride and oxynitride were deposited by Plasma Enhanced Chemical Vapour Deposition technique and used as a dielectric underlayer. MIS devices were fabricated to allow electrical characterization. Moreover, the influence of underlayers on adhesion of c-BN to silicon substrate was examined.

Słowa kluczowe

PL

właściwości elektrofizyczne; Si-cBN

EN

electrophysical properties; ultrathin dielectric layer; Si-cBN

• Czasopismo: Inżynieria Biomateriałów
• Rocznik: 2006
• Tom: R. 9, nr 56-57
• Strony: 27-29
• Opis fizyczny: Bibliogr. 8 poz., rys., tab., wykr.

Twórcy

autor

Firek, P.

• Institute of Microelectronics & Optoelectronics, Warsaw University of Technology, Poland,

autor

Mroczyński, R.

• Institute of Microelectronics & Optoelectronics, Warsaw University of Technology, Poland

autor

Szmidt, J.

• Institute of Microelectronics & Optoelectronics, Warsaw University of Technology, Poland

autor

Beck, R.B.

• Institute of Microelectronics & Optoelectronics, Warsaw University of Technology, Poland

autor

Werbowy, A.

• Institute of Microelectronics & Optoelectronics, Warsaw University of Technology, Poland

Bibliografia

• [1] R. Kirschmann (ed.), High-Temperature Electronics, IEEE Press, Piscataway, 1999.
• [2] P.J. Gielisse, “Wide Bandgap Materials in Future Electronic Applications”, IMAPS POLAND Conference 2000.
• [3] S. Noor Mohammad, Solid-State Electronics, 46 (2002) 2003.
• [4] S. Kurooka, T. Ikeda, A, Tanaka, Nuclear Instruments and Methods in Physics Research B, 206 (2003), 1008-1091.
• [5] H.Walter, K. Bewilogua, A. Schutze. T. Maassen, Diamond and Related Materials, 8 (1999}, 110-193.
• [6] J. Smidt, Chaos, Solutions & Fractals Vol. 10, No 12, pp. 2099-2152, 1999.
• [7] A. Werbowy, P. Firek, J. Szmidt, M. Gałązka, A. Olszyna, Journal of Wide Bandgap Materiale, SAGE Publ. vol. 9, No. 3 (2002) pp. 169-176.
• [8] J. Szmidt, A. Sokołowska, A. Olszyna, A. Werbowy, P. Pawłowski, Diamond and Related Materiale 8, (1999), 391-397.