Warianty tytułu
Języki publikacji
Abstrakty
Three different types of samples of InP nanowires, i.e. undoped, doped with Si and doped with Te, were grown and measured using SEM and Raman spectroscopy. Scanning Electron Microscope (SEM) images showed differences in the length, homogeneity and curvature of the nanowires. The most homogenous wires, grown most perpendicular to the surface, were those Si doped. They were also the shortest. Raman spectroscopy showed that the nanowires doped with Si had the lowest Full Width at Half Maximum (FWHM) TO band, which suggests the highest crystal quality of these wires. For the wires doped with Te, which were the most inhomogeneous, a low energy acoustic band was also observed, which suggests the lowest crystal quality of these structures.
Słowa kluczowe
Czasopismo
Rocznik
Tom
Strony
851--855
Opis fizyczny
Bibliogr. 29 poz., rys.
Twórcy
autor
- Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland
autor
- Institute of Electronic Materials Technology, 133 Wolczynska Str., 01-919 Warsaw, Poland
autor
- Institute of Electronic Materials Technology, 133 Wolczynska Str., 01-919 Warsaw, Poland
autor
- Institute of Electronic Materials Technology, 133 Wolczynska Str., 01-919 Warsaw, Poland
Bibliografia
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Uwagi
Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na
działalność upowszechniającą naukę (zadania 2017).
działalność upowszechniającą naukę (zadania 2017).
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.baztech-7380e6d1-8b64-4730-8089-cf75cde81d6c