Effect of electron beam injection on boron redistribution in silicon and oxide layer

• Autorzy: Qin, S. , Tan, Y. , Li, J. , Jiang, D. , Wen, S. , Shi, S.
• Języki publikacji: EN

Abstrakty

EN

The behavior of boron redistribution in silicon with and without oxide layer after electron beam injection (EBI) was investigated. Special defect shapes were generated on the surface of bare and oxidized silicon wafers. Secondary ion mass spectrometer was used to measure the boron profile. The results showed that after long EBI time, boron tended to be induced from both sides of the transition region between the oxide layer and silicon. For the sample without oxide layer after EBI, boron tended to diffuse towards the surface and its concentration obviously reduced inside the silicon. The results of the study show the potential use of the process in removing boron impurity in silicon.

Słowa kluczowe

EN

electron beam injection; silicon; solar energy materials; boron; oxidation

• Czasopismo: Materials Science Poland
• Rocznik: 2017
• Tom: Vol. 35, No. 1
• Strony: 14--17
• Opis fizyczny: Bibliogr. 18 poz., rys.

Twórcy

autor

Qin, S.

• School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China
• Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, China

autor

Tan, Y.

• School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China
• Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, China

autor

Li, J.

• School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China,
• Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, China

autor

Jiang, D.

• School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China
• Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, China

autor

Wen, S.

• School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China
• Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, China

autor

Shi, S.

• School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China
• Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian 116023, China

Bibliografia

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Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).

Identyfikatory

DOI

10.1515/msp-2017-0027