Estimation of optical parameters of silicon single crystals with different orientations

• Autorzy: El-Nahass, M. M. , Ali, H. A. M.
• Języki publikacji: EN

Abstrakty

EN

Optical properties of Si single crystals with different orientations (1 0 0) and (1 1 1) were investigated using spectrophotometric measurements in a spectral range of 200 nm to 2500 nm. The data of optical absorption revealed an indirect allowed transition with energy gap of 1.1 ± 0.025 eV. An anomalous dispersion in addition to a normal dispersion was observed in the spectra of refractive index. The normal dispersion of the refractive index was discussed according to Wemple-DiDomenico single oscillator model. The oscillator energy E_o, dispersion energy E_d, high frequency dielectric constant ϵ_∞, lattice dielectric constant ϵ_L and electronic polarizability αe were estimated. The real ϵ₁ and imaginary ϵ₂ parts of dielectric constant were also determined.

Słowa kluczowe

EN

single crystals; different orientations; optical parameters

• Czasopismo: Materials Science Poland
• Rocznik: 2019
• Tom: Vol. 37, No. 1
• Strony: 65--70
• Opis fizyczny: Bibliogr. 18 poz., rys., tab.

Twórcy

autor

El-Nahass, M. M.

• Department of Physics, Faculty of Education, Ain Shams University, Roxy 11757, Cairo, Egypt

autor

Ali, H. A. M.

• Department of Physics, Faculty of Education, Ain Shams University, Roxy 11757, Cairo, Egypt,

Bibliografia

• [1] AL-NAIMEE K.A., Indian J. Sci. Technol., 3 (2010), 308.
• [2] SOKOLOV V.I., SHELYKH A.I., Tech. Phys. Lett.+, 34 (2008), 196.
• [3] PUZDER A., WILLIAMSON A.J., GROSSMAN J.C., GALLI G., J. Chem. Phys., 117 (2002), 6721.
• [4] PAWLAK B.J., GREGORKIEWICZ T., AMMERLAAN C.A.J., TAKKENBERG W., TICHELAAR F.D., ALKEMADE P.F.A., Phys. Rev. B, 64 (2001), 115308.
• [5] EL-NAHASS M.M., ATTA A.A., EL-SAYED H.E.A., EL-ZAIDIA E.F.M., Appl. Surf. Sci., 254 (2008), 2458.
• [6] EL-NAHASS M.M., YOUSSEF S.B., ALI H.A.M., J. Optoelectron. Adv. M., 13 (1) (2011), 76.
• [7] GIULIO DI M., MICOCCI G., RELLA R., SICILIANO P., TEWRE A., Phys. Status Solidi A, 136 (1993), KlOl.
• [8] PANKOVE J.I., Optical Processes on semiconductors, Prentice-Hall, New York, 1971.
• [9] TAUC J., Amorphous and liquid semiconductors, Plenum Press, New York, 1974.
• [10] MOSS T.S., Optical Properties in semiconductor, Butter Worths, London, 1959.
• [11] WAKAKI M., KUDO K., SHIBUYA T., Physical Properties and Data of Optical Materials, CRC, New York, 2007.
• [12] EL-GOHARY Z., EL-NAHASS M.M., SOLIMAN H., EL-KADY Y.L., J. Mater. Sci. Technol., 19 (2003), 77.
• [13] WEMPLE S.H., DIDOMENICO M., Phys. Rev. B, 3 (1971), 1338.
• [14] WEMPLE S.H., Phys. Rev. B, 7 (1973), 3767.
• [15] SHARMA P., VASHISTHA M., JAIN I.P., Chalcogenide Lett., 2 (2005), 115.
• [16] ANDRE J.J., SIMON J., Molecular Semiconductors, Spring-Verlag, Berlin, 1985.
• [17] GONZALEZ-LEAL J.M., VLCEK MIR., PRIETOALCON R., STRONSKI A., WAGNER T., MARQUEZ E., J. Non-Cryst. Solids, 326 – 327 (2003), 146.
• [18] CAGLAR M., ILICAN S., CAGLAR Y., Phys. Macedonica, 56 (2006), 49.

Uwagi

PL

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).

Identyfikatory

DOI

10.2478/msp-2019-0003