Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn2S3 thin films

• Autorzy: Srivind, J. , Nagarethinam, V. S. , Balu, A. R.
• Języki publikacji: EN

Abstrakty

EN

Nanoneedle structured Sn₂S₃ thin films were prepared by spray pyrolysis technique from aqueous solutions of tin (II) chloride and thiourea, keeping the molar concentrations of S:Sn = 0.01:0.01, 0.02:0.02, 0.03:0.03 and 0.04:0.04 in the starting solutions. XRD studies reveal that all the films exhibit orthorhombic crystal structure with a preferential orientation along the [2 1 1] direction. The peak intensity of the (2 1 1) plane is found to be maximum for the film coated with 0.02:0.02 S:Sn molar concentration which confirms the improved crystalline nature of this film. SEM images depict that the film coated with S:Sn molar concentration 0.02:0.02 exhibit needle shaped grains. The optical band gap exhibits red shift from 2.12 eV to 2.02 eV with an increase in S:Sn precursor molar concentration. Electrical studies show that the films having S:Sn molar concentrations 0.01:0.01 and 0.02:0.02 exhibit minimum resistivity values of 0.238 and 0.359Ω ·cm, respectively.

Słowa kluczowe

EN

XRD; scanning electron microscopy; optical band gap; thin films

• Czasopismo: Materials Science Poland
• Rocznik: 2016
• Tom: Vol. 34, No. 2
• Strony: 393--398
• Opis fizyczny: Bibliogr. 28 poz., rys., tab.

Twórcy

autor

Srivind, J.

• PG and Research Department of Physics, AVVM Sri Pushpam College, Poondi-613 503, Tamilnadu, India

autor

Nagarethinam, V. S.

• PG and Research Department of Physics, AVVM Sri Pushpam College, Poondi-613 503, Tamilnadu, Indi

autor

Balu, A. R.

• PG and Research Department of Physics, AVVM Sri Pushpam College, Poondi-613 503, Tamilnadu, India,

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Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.

Identyfikatory

DOI

10.1515/msp-2016-0035