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2015 | Vol. 23, No. 2 | 143-148
Tytuł artykułu

Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors

Wybrane pełne teksty z tego czasopisma
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The performance of HgCdTe barrier detectors with cut-off wavelengths up to 3.6 μm fabricated using metaloorganic chemical vapour deposition operated at high temperatures is presented. The detectors’ architecture consists of four layers: cap contact, wide bandgap barrier, absorber and bottom contact layer. The structures were fabricated both with n- and p-type absorbing layers. In the paper, different design of cap-barrier structural unit (n-Bp', n+-Bp', p+-Bp) were analysed in terms of various electrical and optical properties of the detectors, such as dark current, current responsivity time constant and detectivity. The devices with a p-type cap contact exhibit very low dark current densities in the range of (2÷3)×10⁻⁴ A/cm² at 230 K and the maximum photoresponse of about 2 A/W in wide range of reverse bias voltage. The time constant of measured de- vices with n-type cap contact and p-type absorbing drops below 1 ns with reverse bias while the detectivity is at the level of 1010 cm・Hz1/2/W.
Wydawca

Rocznik
Strony
143-148
Opis fizyczny
Bibliogr. 17., il., wykr.
Twórcy
autor
  • Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland, mkopytko@wat.edu.pl
  • Vigo System S.A., 129/133 Poznańska St., 05-850 Ożarow Mazowiecki, Poland
autor
  • Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland
  • Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland
Bibliografia
  • 1. A. Rogalski, Infrared Detectors, second ed„ CRC Press, Boca Raton, 2011.
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  • 5. S. Maimon, and G.W. Wicks, “nBn detector, an infrared detector with reduced dark current and higher operating temperature”, Appl. Phys. Lett. 89. 151109 (2006).
  • 6 . P. Klipstein, “XBn barrier photodetectors for high sensitivity and high operating temperature infrared sensors”. Proc. SPI. 6940, 694 0 2U -1-11 (2008).
  • 7. D. Ting, A. Soibel, C. Hill, S. Keo, J. Mumolo, and S. Gunapala, “High operating temperature midwave quantum dot barrier infrared detector (QD-BIRD)”, Proc. SPIE 8353, 835332 (2012).
  • 8 . E. Plis, S. Myers, M.N. Kutly, J. Mailferd, E.P. Smith, S. Johnson, and S. Krishna, “Lateral diffusion of minority carriers in InAsSb-bascd nBn detectors,” Appl. Phys. Lett. 97, 123503 (2010).
  • 9. J.B. Rodriguez, E. Plis, G. Bishop, Y.D. Sharma, H. Kim. L.R. Dawson, and S. Krishna, “nBn structure based on InAs/GaSb type-II strained layer superlattices”, Appl. Phys. Lett. 91,043514-1-2(2007).
  • 10. A.M. ltsuno, J.D. Phillips, and S. Velicu, “Mid-wave infrared HgCdTe nBn photodetector”, Appl. Phys. Lett. 100. 161102 (2012).
  • 11. A.M. Itsuno, J.D. Phillips, and S. Velicu, “Design of an Auger-suppressed unipolar HgCdTe NBnN photodetector”, J. Electron. Mater. 41, 2886-2892 (2012).
  • 12. S. Velicu, J. Zhao, M. Morley, A.M. Itsuno, and J.D. Philips,“Theoretical and experimental investigation of MWIR HgCdTe nBn detectors”, Proc. SPIE 8268, 82682X-1-13 (2012).
  • 13. M, Kopytko, “Design and modelling of high-operating temperature MWIR HgCdTe nBn detector with n- and p-type barriers”, Infrared Phys. Technol. 64, 47-55 (2014).
  • 14. M. Kopytko, A. Kębłowski, W. Gawron, P. Madejczyk, A. Kowalewski, and K. Jóźwikowski, “High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD,” Opto-Electron. Rev. 21, (2013).
  • 15. P. Madejczyk, A. Piotrowski, W. Gawron, K. Kłos, J. Pawluezyk, J. Rutkowski, J. Piotrowski, and A. Rogalski, “Growth and properties of MOCVD HgCdTe epilayers on GaAs substrate”, Opto-Electron. Rev. 13, 239-251 (2005).
  • 16. A. Piotrowski. P. Madejczyk, W. Gawron. K. Kłos, J. Pawluczyk, J. Rutkowski, J. Piotrowski, and A. Rogalski, “Progress in MOCVD growth of HgCdTe heterostructures for uncooled infrared photodetectors”, Infrared Physics & Technol. 49, 173-182 (2007).
  • 17. P. Madejczyk, A. Piotrowski, K. Kłos, W. Gawron, J. Rutkowski, and A. Rogalski, “Control of acceptor doping in MOCVD HgCdTe epilayers” , Opto-Electron. Rev. 18, 271-276 (2010).
Uwagi
EN
The work has been done under the financial support of the Polish National Science Centre as research Project No. DEC-2011/03/D/ST7/03161 and the Polish National Centre for Research and Development Centre as the Research Project No. PBS1/B5/2/2012.
Typ dokumentu
Bibliografia
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Identyfikator YADDA
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