Reactive Magnetron Sputtering Technology for Receiving III Nitrides

• Autorzy: Kushitashvili, Zurab , Bibilashvili, Amiran , Dolidze, Nugzar , Skhiladze, Givi , Guliaevi, Revaz

Warianty tytułu

PL

Technologia reaktywnego rozpylania magnetronowego do otrzymywania azotków III

• Języki publikacji: EN

Abstrakty

EN

In the present work is studied synthesis of galium nitride (GaN) and aluminum nitride (AlN) by DC Reactive Magnetron Sputtering technology. As a sputtering target was used high purity (99.9999%) Gallium and Aluminum materials and as a reagent gas was used high purity (99.9999%) Nitrogen. Magnetron sputtering system with strong magnets (1450 mT) allows to make plasma at a low preasure 3 × 10-2 Pa and deposition process was carried out at high vacuum conditions. Deposited layers of GaN and AlN on the sappire substrate was analysed by X-ray diffraction (XRD) and revealed the crystalline nature highly oriented with the (0002) for both nitrides. For chemical composition was measured X-ray Photoelectron Spectroscopy (XPS) and it was found out the ratios of Ga:N and Al:N to be 1.07 and 1.04 respectively. For surface analysis was made Scanning Electron Microscopy (SEM). Optic transmission spectra showed band gaps to be 3.43 eV and 6.13 eV for GaN and AlN respectively.

Słowa kluczowe

PL

reaktywne rozpylanie magnetronowe; skaningowa mikroskopia elektronowa; dyfrakcja promieniowania rentgenowskiego; azotki

EN

reactive magnetron sputtering; scanning electron microscopy; x-ray diffraction; nitrides

• Czasopismo: Inżynieria Mineralna
• Rocznik: 2024
• Tom: Vol. 1, no. 1
• Strony: 675--680
• Opis fizyczny: Bibliogr. 11 poz., tab., wykr., zdj.

Twórcy

autor

Kushitashvili, Zurab

• LEPL Institute of Micro and Nanoelectronics, Chavchavadze ave.13, 0179 Tbilisi, Georgia,

autor

Bibilashvili, Amiran

• Faculty of Geology, Geophysics and Environmental Protection, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków, Poland
• Institute of Geological Sciences, Polish Academy of Sciences, Twarda 51/55, 00-818 Warszawa, Poland

autor

Dolidze, Nugzar

• LEPL Institute of Micro and Nanoelectronics, Chavchavadze ave.13, 0179 Tbilisi, Georgia

autor

Skhiladze, Givi

• LEPL Institute of Micro and Nanoelectronics, Chavchavadze ave.13, 0179 Tbilisi, Georgia

autor

Guliaevi, Revaz

• LEPL Institute of Micro and Nanoelectronics, Chavchavadze ave.13, 0179 Tbilisi, Georgia

Bibliografia

• 1. N.-Q. Zhang, S. Keller, G. Parish, S. Heikman, S. P. DenBaars, U. K. Mishra, "High breakdown GaN HEMTs with overlapping gate structure", IEEE Electron Device Lett., vol. 21, pp. 421-423, Sept. 2000, doi: 10.1109/55.863096
• 2. L. F. Eastman, K. Chu, J. Smart, J. R. Shealy, "GaN materials for high-power microwave amplifiers", Mater. Res. Soc. Symp. Proc., vol. 512, pp. 3-7, 1998. doi: 10.1143/APEX.5.066503
• 3. S.T. Sheppard, K. Doverspike, W.L. Pribble, S.T. Allen, J.W. Palmour, L.T. Kehias, and T.J. Jenkins, ’’High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates’’, IEEE Electron Device Lett., vol. 20, pp. 161-163, April 1999, doi: 10.1109/55.753753.
• 4. U. K. Mishra, P. Parikh, and Y. F. Wu, “AlGaN/GaN HEMTs—an overview of device operation and applications,” Proc. IEEE, vol. 90, no. 6, pp. 1022–1031, Jun. 2002, doi: 10.1109/LED.2005.861027
• 5. Y. F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, “30-W/mm GaN HEMTs by field plate optimization,” IEEE Electron Device Lett., vol. 25, no. 3, pp. 117–119, Mar. 2004, doi: 10.1109/LED.2003.822667.
• 6. H. Akinaga, S. Németh, J. De Boeck, L. Nistor, H. Bender, and G. Borghs, ’’ Growth and characterization of low temperature grown GaN with high Fe doping’’, Appl. Phys. Lett. 77, pp. 4377-4380, Octo. 2000, doi: 10.1063/1.1335547
• 7. H. Ofuchi and M. Oshima, “Fluorescence x-ray absorption fine structure study on local structures around Fe atoms heavily doped in GaN by low-temperature molecular-beam epitaxy”, AIP Appl. Phys. Lett. 78, pp. 2470 (2001); doi: 10.1063/1.1368184
• 8. N. Theodoropoulou and A. F. Hebard, “Characterization of high dose Fe implantation into p-GaN”, AIP Appl. Phys. Lett. 79, pp. 3452 (2001), doi: 10.1063/1.1420406
• 9. Shinji Yudate, Ryo Sasaki, Takashi Kataoka, Sho Shirakata, “Growth condition dependence of photoluminescence of Eu-doped GaN films prepared by radio frequency magnetron sputtering”, ELSEVIER B.V, Optical Materials 28, pp. 742-745, 2006, doi: 10.1016/j.optmat.2005.09.013.
• 10. C.W. Zou, M.L. Yin, M. Li, L.P. Guo, “GaN films deposited by middle-frequency magnetron sputtering”, ELSEVIER B.V, Applied Surface Science, 253, pp. 9077-9080, Sept. 2007, doi: 10.1016/j.apsusc.2007.05.037.
• 11. William A. Melton, Jasques I. Pankove, “GaN growth on sapphire”, ELSEVIER B.V, Journal of Crystal Growth vol. 178, pp. 168-173, June 1997, doi: 10.1016/S0022-0248(97)00082-1.

Uwagi

Opracowanie rekordu ze środków MNiSW, umowa nr POPUL/SP/0154/2024/02 w ramach programu "Społeczna odpowiedzialność nauki II" - moduł: Popularyzacja nauki i promocja sportu (2025).

Identyfikatory

DOI

10.29227/IM-2024-01-78