Study of ultrathin Co films grown on Si(111) substrates

• Autorzy: Stupakiewicz, A. , Fleurence, A. , Gieniusz, R. , Maziewski, A. , Maroutian, T. , Gogol, P. , Bartenlian, B. , Mégy, R. , Beauvillain, P.
• Języki publikacji: EN

Abstrakty

EN

Ultrathin Co films were grown on vicinal Si(111) substrate with Cu buffer layers. Room temperature ferromagnetic behaviour of Co layer thicker than 4 monolayers was confirmed by the magneto-optical Kerr effect. Ferromagnetic resonance measurements have proven the coexistence of the magnetocrystalline anisotropy along with the growth- and vicinal induced uniaxial out-of-plane and in-plane contributions. Multi-jump hysteresis loops were observed for selected in-plane orientations of magnetic field which is explained by the competition of different anisotropy contributions.

Słowa kluczowe

EN

magnetic anisotropy; ultrathin films; cobalt; vicinal substrate

• Czasopismo: Materials Science Poland
• Rocznik: 2008
• Tom: Vol. 26, No. 4
• Strony: 1021--1026
• Opis fizyczny: Bibliogr. 15 poz., rys., wykr.

Twórcy

autor

Stupakiewicz, A.

• Institute of Experimental Physics, University of Białystok, Lipowa 41, 15-424 Białystok, Poland,
• Institut d'Electronique Fondamentale,Universite Paris XI; CNRS, UMR 8622, F-91405 Orsay, France

autor

Fleurence, A.

• Institut d'Electronique Fondamentale,Universite Paris XI; CNRS, UMR 8622, F-91405 Orsay, France

autor

Gieniusz, R.

• Institute of Experimental Physics, University of Białystok, Lipowa 41, 15-424 Białystok, Poland

autor

Maziewski, A.

• Institute of Experimental Physics, University of Białystok, Lipowa 41, 15-424 Białystok, Poland

autor

Maroutian, T.

• Institut d'Electronique Fondamentale,Universite Paris XI; CNRS, UMR 8622, F-91405 Orsay, France

autor

Gogol, P.

• Institut d'Electronique Fondamentale,Universite Paris XI; CNRS, UMR 8622, F-91405 Orsay, France

autor

Bartenlian, B.

• Institut d'Electronique Fondamentale,Universite Paris XI; CNRS, UMR 8622, F-91405 Orsay, France

autor

Mégy, R.

• Institut d'Electronique Fondamentale,Universite Paris XI; CNRS, UMR 8622, F-91405 Orsay, France

autor

Beauvillain, P.

• Institut d'Electronique Fondamentale,Universite Paris XI; CNRS, UMR 8622, F-91405 Orsay, France

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