Characterization of GaN nanostructures by electron field and photo-field emission

• Autorzy: Litovchenko, V. , Evtukh, A. , Grygoriev, A.
• Języki publikacji: EN

Abstrakty

EN

The electron field and photo-field emission from GaN nanostructures has been analyzed in this review. In order to explain the obtained experimental results, a model was proposed taking into account the change in carrier concentration distribution in the main and the satellite valley during the emission process. The lowering of work function (due to the increased number of carriers in the satellite valley) can explain the decrease in the Fowler-Nordheim plot slope. It was shown that the energy difference between the main and satellite valley in GaN was decreased in the case of quantum confinement, thus increasing the probability of electron transition from Γ to X valley at same electric fields. Investigations of electron photo-field emission demonstrated that the Fowler-Nordheim plots of the emission current have different slopes for nonilluminated and illuminated devices. A model based on the electron emission from valleys having different specific electron affinities is proposed to explain the experimental results. In the absence of illumination the emission takes place only from the lower valley. Upon UV illumination and presence of a high electric field at the emitter tip, the upper valley of the conduction band appears to be occupied by electrons generated at the valence band.

Słowa kluczowe

EN

GaN nanostructures; electron field emission; photo-field emission; electron redistribution; illumination; quantum effects

• Czasopismo: Opto-Electronics Review
• Rocznik: 2017
• Tom: Vol. 25, No. 3
• Strony: 251--262
• Opis fizyczny: Bibliogr. 91 poz., il., rys., wykr.

Twórcy

autor

Litovchenko, V.

• V. Lashkaryov Institute of Semiconductor Physics, 41 Nauki ave., 03028 Kyiv, Ukraine

autor

Evtukh, A.

• V. Lashkaryov Institute of Semiconductor Physics, 41 Nauki ave., 03028 Kyiv, Ukraine,

autor

Grygoriev, A.

• V. Lashkaryov Institute of Semiconductor Physics, 41 Nauki ave., 03028 Kyiv, Ukraine

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Uwagi

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Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017)

Identyfikatory

DOI

10.1016/j.opelre.2017.06.004