Flash memory cells data loss caused by total ionizing dose and heavy ions

• Autorzy: Andrey Petrov , Alexey Vasil’ev , Anastasia Ulanova , Alexander Chumakov , Alexander Nikiforov
• Języki publikacji: EN

Abstrakty

EN

The paper provides experimental results of flash memory loss data investigation. Possible mechanisms of charge loss from storage element are reviewed. We provide some guidelines for flash memory evaluation to space application.

Słowa kluczowe

EN

flash memory; single event upsets; total dose

• Czasopismo: Open Physics
• Rocznik: 2014
• Tom: 12
• Numer: 10
• Strony: 725-729

Daty

wydano

2014-10-01

online

2014-08-16

Twórcy

autor

Andrey Petrov

• National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow, 115409, Russian Federation,

autor

Alexey Vasil’ev

• National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow, 115409, Russian Federation

autor

Anastasia Ulanova

• National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow, 115409, Russian Federation

autor

Alexander Chumakov

• National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow, 115409, Russian Federation

autor

Alexander Nikiforov

• National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow, 115409, Russian Federation

Bibliografia

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Identyfikatory

DOI

10.2478/s11534-014-0503-6