Simulations of AlGaAs/GaAs heterojunction phototransistors

• Autorzy: Beata Ściana , Marek Panek , Artur Borczuch , Marek Tłaczała
• Języki publikacji: EN

Abstrakty

EN

Heterojunction bipolar phototransistors, based on GaAs technology, are widely used in optoelectronic integrated circuits. One of the methods to improve phototransistor performance is applying a delta-doped thin base, which causes both a higher current gain and a better time response. There is a lack of information about this kind of device in the literature. Our work presents the results of computer simulations of AlGaAs/GaAs n-p-n phototransistors, with a bulk-doped and delta-doped base working as two- and threeterminal devices. The characteristics and device parameters obtained clearly show that phototransistors with delta-doped base have higher sensitivity and a better time response compared to the structures with a bulk-doped base. Based on simulation results, we modified the epitaxial phototransistor structure with a double delta-doped base that should improve device performance.

Słowa kluczowe

EN

phototransistor; AlGaAs/GaAs heterostructure; delta-doping; spectral characteristics; response time

• Czasopismo: Open Physics
• Rocznik: 2011
• Tom: 9
• Numer: 4
• Strony: 1114-1121

Daty

wydano

2011-08-01

online

2011-04-30

Twórcy

autor

Beata Ściana

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland,

autor

Marek Panek

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland

autor

Artur Borczuch

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland

autor

Marek Tłaczała

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland

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Identyfikatory

DOI

10.2478/s11534-011-0023-6