Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN

• Autorzy: Limin Zhang , Xiaodong Zhang , Wei You , Zhen Yang , WenXiu Wang , Qing Ge , Zhengmin Liu
• Języki publikacji: EN

Abstrakty

EN

The effects of Si, O, C and N ion implantation with different implantation doses on yellow luminescence (YL) of GaN have been investigated. The as-grown GaN samples used in the work were of unintentional doped n-type, and the photoluminescence (PL) spectra of samples had strong YL. The experimental results showed that YL of ion implanted samples exhibited marked reductions compared to samples with no implantation, while the near band edge (NBE) emissions were reduced to a lesser extent. The deep-level centers associated with YL may be produced in GaN films by O and C ion implantation, and identities of these deep-level centers were analyzed. It was also found that the dose dependence of YL was analogous with the one of the intensity ratios of YL to the near band edge (NBE) emission (I YL/I NBE) for ion implanted samples. The possible reason for this comparability has been proposed.

Słowa kluczowe

EN

gallium nitride (GaN); photoluminescence spectra; ion implantation

• Czasopismo: Open Physics
• Rocznik: 2008
• Tom: 6
• Numer: 2
• Strony: 283-288

Daty

wydano

2008-06-01

online

2008-03-26

Twórcy

autor

Limin Zhang

• School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China,

autor

Xiaodong Zhang

• School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China

autor

Wei You

• School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China

autor

Zhen Yang

• School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China

autor

WenXiu Wang

• School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China

autor

Qing Ge

• School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China

autor

Zhengmin Liu

• School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China

Bibliografia

• [1] J.W. Orton, C.T. Foxon, Rep. Prog. Phys. 61, 1 (1998) http://dx.doi.org/10.1088/0034-4885/61/1/001[Crossref]
• [2] S.J. Pearton, J.C. Zolper, R.J. Shul, F. Ren, J. Appl. Phys. 86, 1 (1999) http://dx.doi.org/10.1063/1.371145[Crossref]
• [3] S.O. Kucheyev et al., Phys. Rev. B 64, 035202 (2001)
• [4] J.S. Milliams, Mater. Sci. Eng. A 253, 8 (1998) http://dx.doi.org/10.1016/S0921-5093(98)00705-9[Crossref]
• [5] B. Monemar, In: J.I. Pankove, T.D. Moustakas (Eds.), Gallium Nitride, Semiconductors and Semimetals 50 (Academic Press, San Diego, 1998) 313
• [6] J. Neugebauer, C.G. Van de Walle, Appl. Phys. lett 69, 503 (1996) http://dx.doi.org/10.1063/1.117767[Crossref]
• [7] K. Saarinen et al., Phys. Rev. Lett. 79, 3030 (1997) http://dx.doi.org/10.1103/PhysRevLett.79.3030[Crossref]
• [8] T. Mattila, R.M. Nieminen, Phys. Rev. B 55, 9571 (1997) http://dx.doi.org/10.1103/PhysRevB.55.9571[Crossref]
• [9] K. Saarinen et al., Appl. Phys. Lett. 73, 3253 (1998) http://dx.doi.org/10.1063/1.122735[Crossref]
• [10] J. Oila et al., Phys. Rev. B 63, 045205 (2001)
• [11] T. Ogino, M. Aoki, Jpn. J. Appl. Phys. 19, 2395 (1980) http://dx.doi.org/10.1143/JJAP.19.2395[Crossref]
• [12] S.O. Kucheyev et al., J. Appl. Phys. 91, 5867 (2002) http://dx.doi.org/10.1063/1.1467605[Crossref]
• [13] R. Armitage et al., Appl. Phys. Lett. 82, 3457 (2003) http://dx.doi.org/10.1063/1.1578169[Crossref]
• [14] J.C. Zolper, R.G. Wilson, S.J. Pearton, R.A. Stall, Appl. Phys. Lett. 68, 1945 (1996) http://dx.doi.org/10.1063/1.115634[Crossref]
• [15] J.C. Zopler et al., Appl. Phys. Lett. 70, 2729 (1997) http://dx.doi.org/10.1063/1.119254[Crossref]
• [16] I. Shalish et al., Phys. Rev. B 59, 9748 (1999) http://dx.doi.org/10.1103/PhysRevB.59.9748[Crossref]
• [17] L. Dai, J.C. Zhang, Y. Chen, G.Z. Ran, G.G. Qin, Physica B 322, 51 (2002) http://dx.doi.org/10.1016/S0921-4526(02)00598-7[Crossref]

Identyfikatory

DOI

10.2478/s11534-008-0013-5