Properties of atmospheric pressure plasma oxidized layers on silicon wafers

• Autorzy: Dana Skácelová , Petr Sládek , Pavel Sťahel , Lukáš Pawera , Martin Haničinec , Jürgen Meichsner , Mirko Černák
• Języki publikacji: EN

Abstrakty

EN

In this research a new process of plasma oxidation of crystalline silicon at room temperature is studied. The plasma oxidation was carried out using Diffuse Coplanar Surface Barrier Discharge (DCSBD) operating in ambient air and oxygen at atmospheric pressure. The influence of exposition time, plasma parameters and crystallographic orientation of silicon on oxidized layers and their dielectric properties were investigated. Thickness, structure and morphology of these layers were studied by ellipsometry, infrared absorption spectroscopy and scanning electron microscopy. During the treatment time, from 1 to 30 minutes, oxidized layers were obtained with thickness from 1 to 10 nm. Their roughness depends on the crystallographic orientation of silicon surface and exposure time. Electrical parameters of the prepared layers indicate the presence of an intermediate layer between silicon substrate and the oxidized layer.

EN

Słowa kluczowe

EN

Amorphous silicon oxide; atmospheric pressure plasma; oxidation; DCSBD

• Czasopismo: Open Chemistry
• Rocznik: 2015
• Tom: 13
• Numer: 1

Daty

otrzymano

2014-01-31

zaakceptowano

2014-05-08

online

2014-11-26

Twórcy

autor

Dana Skácelová

• Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlářská 2, 611 37, Brno, Czech Republic

autor

Petr Sládek

• Department of Physics, Faculty of Education, Masaryk University, Poříčí 7, 603 00, Brno, Czech Republic

autor

Pavel Sťahel

• Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlářská 2, 611 37, Brno, Czech Republic

autor

Lukáš Pawera

• Department of Physics, Faculty of Education, Masaryk University, Poříčí 7, 603 00, Brno, Czech Republic

autor

Martin Haničinec

• Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlářská 2, 611 37, Brno, Czech Republic

autor

Jürgen Meichsner

• Institute of Physics, University of Greifswald, Felix-Hausdorff-Strasse 6, 17487, Greifswald, Germany

autor

Mirko Černák

• Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlářská 2, 611 37, Brno, Czech Republic

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Identyfikatory

DOI

10.1515/chem-2015-0047