Deposition of Zn-containing films using atmospheric pressure plasma jet

• Autorzy: Oleksandr Galmiz , Monika Stupavska , Harm Wulff , Holger Kersten , Antonin Brablec , Mirko Cernak
• Języki publikacji: EN

Abstrakty

EN

The purpose of this work was to deposit Zn-containing films on Si substrates using the commercial atmospheric pressure plasma jet “kINPen’09.” In preliminary experiments Zn-containing films were deposited on the silicon substrates immersed in water solutions of Zn(NO3)2•6H2O salt. The surface composition of deposited films was analyzed by the XPS (X-ray photoelectron spectroscopy) technique while the bulk composition was studied by means of XRD (X-ray diffraction) mesurements. The film thickness was measured by a profilometer. We have determined that the concentration of the zinc nitrate solution as well as changes in the deposition time resulted in a large fluctuation of the deposited film thickness. However, the successful deposition of the Zn-containing films on the Si substrate was definitely confirmed.

EN

Słowa kluczowe

EN

Atmospheric pressure plasma jet; film deposition; zinc

• Czasopismo: Open Chemistry
• Rocznik: 2015
• Tom: 13
• Numer: 1

Daty

otrzymano

2014-01-30

zaakceptowano

2014-05-14

online

2014-11-17

Twórcy

autor

Oleksandr Galmiz

• Dept. of Physical Electronics, Masaryk University, 61137 Brno, Czech Republic,

autor

Monika Stupavska

• Dept. of Physical Electronics, Masaryk University, 61137 Brno, Czech Republic

autor

Harm Wulff

• University of Greifswald, Institute of Physics, 17489 Greifswald, Germany

autor

Holger Kersten

• Institute of Experimental and Applied Physics, Christian-Albrechts-Universitat zu Kiel, 24098 Kiel, Germany

autor

Antonin Brablec

• Dept. of Physical Electronics, Masaryk University, 61137 Brno, Czech Republic

autor

Mirko Cernak

• Dept. of Physical Electronics, Masaryk University, 61137 Brno, Czech Republic

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Identyfikatory

DOI

10.1515/chem-2015-0020