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PL
W pracy przedstawiono wyniki badań wpływu wygrzewania na właściwości cienkich warstw tlenków wanadu (VxOy) wytworzonych metodą rozpylania magnetronowego. Cienkie warstwy bezpośrednio po naniesieniu oraz po wygrzewaniu w 200°C zostały poddane badaniom strukturalnym, optycznym oraz elektrycznym. Współczynnik transmisji cienkich warstw po wygrzewaniu zmniejszył się z około 70% na 50%. Z kolei rezystywność cienkiej warstwy tlenku wanadu po naniesieniu wynosiła 3.4·10⁴ Wcm, natomiast powłoki po wygrzaniu 1.6·10² Wcm. Badania współczynnika Seebecka wykazały, że wraz ze wzrostem różnicy temperatury między kontaktami elektrycznymi następuje zmiana typu przewodnictwa z dziurowego na elektronowy, a wygrzanie warstwy spowodowało uwydatnienie elektronowego typu przewodnictwa.
EN
This paper provides the research results of the influence of the post-process annealing of vanadium oxide (VxOy) thin films deposited by magnetron sputtering on their properties. As-deposited and annealed at 200°C thin films were analysed by means of their structural, optical and electrical properties. The transmission of thin films after annealing decreased from ca. 70% to 50%. In turn, the resistivity of the vanadium oxide thin films was equal to 3,4·10⁴ Wcm, while after post-process annealing it decreased to 1.6·10² Wcm. The studies of the Seebeck coefficient showed that with the increase of the temperature difference between the electrical contacts, the type of conductivity changes from hole to electron type, while the annealing of the layer enhances the electronic type of conductivity.
PL
Celem badań była analiza przewodności elektrycznej biowęgla uzyskanego z materiału organicznego metodą pyrolizy. W celu wykonania pomiarów właściwości elektrycznych biowęgla, zbudowano prototypowe urządzenie. Oprócz pomiarów właściwości elektrycznych umożliwia ono m.in. pomiar gęstości właściwej dowolnej próbki materiału sypkiego. W rozpatrywanym przypadku po napełnieniu komory roboczej i zagęszczeniu proszku otrzymywano pastylkę węglową. Dla niej określano pomiarami bezpośrednimi właściwości elektryczne tj.: spadek napięcia przy przepływie prądu przez próbkę (prąd stały i przemienny), oporność rezystora węglowego, wartość prądu przepływającego przez rezystor, indukcyjność oraz pojemność. Ponadto przy pomocy oscyloskopu rejestrowano charakterystyki dynamiczne napięcia w odniesieniu do prądu przemiennego przepływającego przez rezystor węglowy. Stwierdzono, że badanym próbkom można przypisać cechy obiektu elektronicznego o charakterze pojemnościowym.
XX
The aim of the research was to analyze the electrical conductivity of the obtained coal from organic material by pyrolysis. In order to take measurements of the electrical properties of the biochar, a prototype device was built. In addition to measurements of electrical properties, it enables measurement of the specific density of any sample of bulk material. In the case under consideration, after filling the working chamber and concentrating the powder, a carbon pellet was obtained. For it, direct electrical properties were determined by direct measurements, it is: voltage drop at the current flow through the sample (direct and alternating current), resistance of the carbon resistor, value of current flowing through the resistor, inductance and capacity. In addition, the dynamic characteristics of the voltage with respect to the alternating current flowing through the carbon resistor were recorded using the oscilloscope. It has been noted that capacitive features can be attributed to the test samples.
3
Content available remote Granular metal-dielectric nanocomposites as an alternative to passive SMD
EN
AC electrical properties of granular metal-dielectric nanocomposites (FeCoZr)x(PbZrTiO3)(100-x) have been examined. The study was carried for frequencies from 50 Hz to 1 MHz and measurement temperatures of 81 K – 293 K. The samples above percolation threshold xc considered to be resistive. Layers subdued to thermal treatment in air atmosphere behave as perfect capacitors, especially for low temperatures. Nanomaterials below xc demonstrate inductive-like properties. Tested samples could provide an alternative to conventional SMD components.
PL
Ziarniste nanokompozyty typu metal-dielektryk o strukturze (FeCoZr)x(PbZrTiO3)(100-x) zbadano pod kątem właściwości elektrycznych w przedziale temperatur pomiarowych 81 K – 293 K oraz częstotliwości pomiarowych 50 Hz – 1 MHz. Materiały powyżej progu perkolacji xc wykazują rezystancyjny charakter, warstwy wygrzane w temperaturze 573 K – typowo pojemnościowy typ, natomiast nanokompozyty poniżej xc poddane obróbce termicznej – właściwości indukcyjne. Badane nanostruktury stanowią alternatywę dla konwencjonalnych elementów SMD.
EN
Lithium tantalate solid solution, Li3+5xTa1−xO4 was prepared by conventional solid-state reaction at 925 °C for 48 h. The XRD analysis confirmed that these materials crystallized in a monoclinic symmetry, space group C2/C and Z = 8, which was similar to the reported International Crystal Database (ICDD), No. 98-006-7675. The host structure, β-Li3TaO4 had a rock-salt structure with a cationic order of Li+:Ta5+ = 3:1 over the octahedral sites. A rather narrow subsolidus solution range, i.e. Li3+5xTa1−xO4 (0 ⩽ x ⩽ 0.059) was determined and the formation mechanism was proposed as a replacement of Ta5+ by excessive Li+, i.e. Ta5+ ↔ 5Li+. Both Scherrer and Williamson-Hall (W-H) methods indicated the average crystallite sizes in the range of 31 nm to 51 nm. Two secondary phases, Li4TaO4.5 and LiTaO3 were observed at x = 0.070 and x = −0:013, respectively. These materials were moderate lithium ionic conductors with the highest conductivity of ~2.5 × 10-3 Ω -1∙cm-1 at x = 0, at 0 °C and 850 °C; the activation energies were found in the range of 0.63 eV to 0.68 eV.
5
Content available remote Plasmonic nanostructures of SnO2:Sb thin film under gamma radiation response
EN
This paper is a part of a natural dye solar cell project. Conductive transparent oxide (CTO) films have been deposited onto preheated glass substrates using a spray pyrolysis technique. The optical, electrical, structural properties as well as thermal annealing and gamma radiation response were studied. The average optical energy gap of doped films for direct allowed and direct forbidden transitions were found to be 3.92 and 3.68 eV, respectively. The plasmon frequency and plasmon energy after doping were found to be 3.48 x 1014 s-1 and 0.23 eV. The negative absorbance of the doped film was observed in UV-Vis range after applying both thermal annealing and ϒ-dose irradiation with 22 kGy. The negative refractive index of the doped film in UV range (220 – 300 nm) is promising for optical applications. The electron mobility μe reached a maximum of 27.4 cm2·V-1·s-1for Sb concentration of 10 %. The corresponding resistivity ρ and sheet resistance Rs reached their minimum values of 1.1 x 10-3 Ω·cm and 35 Ω·sq-1, respectively. The dopant concentration has been increased from 4.13 x 1019 to 2.1 x 1020cm-3. The doped film was found to exhibit three diffraction peaks associated with (2 2 2), (2 0 0), and (2 1 1) reflection planes, of which the peak of (2 2 2) of Sb2O3 and the peak of (2 0 0) were very close.
6
Content available remote Comparison of electrical properties of CuO/n-Si contacts with Cu/n-Si
EN
In this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation technique. Electrical characteristics of the samples were investigated with the current-voltage (I-V), capacitance-voltage/frequency (C-V/f), and conductance-voltage (G/V) measurements at room temperature. Also, Cu/n-Si/Al Schottky contact was produced as a reference sample to investigate the electrical properties of the samples. The values of ideality factor (n), barrier height (φb) and series resistance (Rs) of the samples were calculated from the forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) characteristics. Also, for checking the consistency of the results, Cheung and Norde functions were used. The experimental result values of CuO/n-Si contact were compared with the values of the reference Cu/n-Si Schottky diode. It was observed that the values of the ideality factor and barrier height of the CuO/n-Si heterojunction were higher than those of the Cu/n-Si Schottky contact, while the series resistance was lower. Also, it has been observed that the value of capacitance decreased with increasing frequency and after a certain value of frequency it was almost constant. The ideality factor of CuO/n-Si/Al heterostructure is about 2.40 and so, it is not close to the ideal behavior.
EN
In this study, lead-free 0.94 Na0.5 Bi0.5 TiO3 -0.06BaTiO3 (NBT-BT) compositions at morphotropic phase boundary were successfully synthesized by solid-state reaction method. The effects of the particle size for various milling time (12-24-48 hours) and sintering temperatures (1100-1125-1150-1175°C for 2 h) on the electrical properties of the NBT-BT ceramics were evaluated. Experimental results showed that particle size and sintering temperatures significantly affect the electrical properties of NBT-BT ceramics. The particle size of the ceramic powders decreasing while milling time increases to 48 hours. Particle size values for 0, 12, 24 and 48 hours (h) milled powders were measured as nearly 1.5 μm, 1 μm, 700 nm, and 500 nm respectively. The bulk density enhanced with increasing sintering temperature and showed the highest value (5.73 g/cm3) at 1150°C for 48 h milled powder. Similarly, the maximum piezoelectric constant (d33 ) = 105 pC/N, electromechanical coupling coefficient (kp ) = 25.5% and dielectric constant (KT) = 575 were measured at 1150°C for 48 h milled powder. However, mechanical quality factor (Qm ) was reduced from 350 to 175 with decreasing particle size. Similarly, remnant polarization was dropped by decreasing powder particle size from 56 μC/cm2 to 45 μC/cm2.
EN
This paper provides a comparative analysis of key physicochemical and electrostatic parameters of Trafo En oil and Midel 7131® synthetic ester, changing in temperature and accelerated thermal ageing. The parameters tested included the density, kinematic viscosity, conductivity and relative electric permittivity. In addition to that, Electrostatic Charging Tendency (ECT) tests of those fluids were performed in a flow system using cellulose and aramid paper pipes. The effect of liquid flow velocity combined with temperature variations and accelerated ageing time on the streaming electrification current generated was determined. The relationship between the fluid electrification degree and measuring pipe material was also investigated.
EN
The present work reports on the optimization of substrate temperature, molar concentration and volume of the solution of nickel oxide (NiO) thin films prepared by nebulizer spray pyrolysis (NSP) technique. NiO films were optimized and characterized by XRD, SEM, EDX, UV-Vis and I-V measurements. Based on XRD analysis, the molar concentration, volume of solution and substrate temperature of the prepared NiO films were optimized as 0.20 M, 5 mL and 450 °C for P-N diode applications. The XRD pattern of the optimized NiO film revealed cubic structure. The surface morphological variations and elemental composition were confirmed by SEM and EDX analysis. The optical properties were studied with UV-Vis spectrophotometer and the minimum band gap value was 3.67 eV for 450 °C substrate temperature. Using J-V characteristics, the diode parameters: ideality factor n and barrier height Фb values of p-NiO/N-Si diode prepared at optimum conditions, i.e. 450 °C, 0.2 M, 5 mL, were evaluated in dark and under illumination.
EN
Single crystal of sodium 4-hydroxybenzenesulfonate dihydrate (Na-4-HBS) was grown from an aqueous solution by slow evaporation method. Powder X-ray diffraction study was carried out to identify the lattice parameters of the crystal. FT-IR spectral analysis confirmed the existence of various functional groups in the compound. The optical transmittance, cut-off wavelength and band gap energy were estimated from the UV-Vis studies. Photoluminescence studies revealed the transition mechanism by optical excitation. The variation of dielectric properties and AC conductivity of the grown crystal with frequency was studied at different temperatures. Measurements of mechanical properties of Na-4-HBS were carried out to find the hardness of the material. The laser induced surface damage threshold and relative second harmonic generation nonlinear optical properties of the grown crystal were studied using Q-switched Nd:YAG laser.
EN
To enhance interfacial bonding between carbon fibers and epoxy matrix, the carbon fibers have been modified with multiwall carbon nanotubes (MWCNTs) using the dip- coating technique. FT-IR spectrum of the MWCNTs shows a peak at 1640 cm−1 corresponding to the stretching mode of the C=C double bond which forms the framework of the carbon nanotube sidewall. The broad peak at 3430 cm−1 is due to O–H stretching vibration of hydroxyl groups and the peak at 1712 cm−1 corresponds to the carboxylic (C=O) group attached to the carbon fiber. The peaks at 2927 cm−1 and 2862 cm−1 are assigned to C–H stretching vibration of epoxy produced at the defect sites of acid-oxidized carbon fiber surface. SEM image shows a better interface bonding between the fiber and the matrix of modified composites (MWCNTs-CF/Ep) than those of unmodified composite. The loss factor curve of CF-MWCNTs/Ep composites is the narrowest compared with neat epoxy and CF/Ep composites which evinces that the length distribution range of molecular chain segments in the matrix is the narrowest. From the dependence of the AC conductivity on temperature, we can see that σAC increases when temperature increases. The increase in electrical conductivity of the composites may be a result of the increased chain ordering due to annealing effect. The use of MWCNTs to modify the surface of carbon fiber resulted in a large amount of junctions among MWCNT causing an increase in the electrical and thermal conductivity by forming conducting paths in the matrix. The MWCNTs-CF/Ep composite shows better thermal stability than unmodified composites. The strong interaction between CF and MWCNTs can retard diffusion of small molecules from the resin matrix at high temperature and hence, result in the improved thermal stability of the modified CF/Ep composite.
PL
W pracy przedstawiono wyniki badania wpływu struktury na właściwości elektryczne oraz optyczne cienkich warstw na bazie tlenków tytanu i miedzi. Cienkie warstwy tlenku miedzi oraz dwuwarstwy TiO₂/CuxO o różnej grubości TiO₂ na powierzchni CuxO były naniesione metodą rozpylania magnetronowego. Wytworzone dwuwarstwy TiO₂/CuxO o różnej grubości TiO₂ były nanokrystaliczne o jednoskośnej strukturze tlenku miedzi II (CuO). Średni rozmiar krystalitów był w zakresie od 10 nm do 14 nm. Stwierdzono, że rezystywność dla cienkiej warstwy CuO była równa 0,7•103 Ω•cm, natomiast dla struktur TiO₂/CuO była w zakresie 0,8•103 ÷ 1,5•103 Ω•cm. W przypadku powłok dwuwarstwowych TiO₂/CuO średnia wartość współczynnika transmisji światła wynosiła ponad 80%.
EN
This paper provides research investigation results and analysis of influence of the structure on electrical and optical properties of thin films based on the titanium and copper oxides. CuxO and TiO₂/CuxO thin films with different thickness of top TiO₂ layer coatings were deposited by the reactive magnetron sputtering method. TiO₂/CuxO bilayers with different thickness of top TiO₂ layer were nanocrystalline and had monoclinc structure of CuO. The crystallite sizes were in the range of 10 nm to 14 nm. It was found that the resistivity for the CuO film was equal to 0.7•103 Ω•cm, and for TiO₂/CuO structures was in the range of 0.8•103 ÷ 1.5•103 Ω•cm. As-prepared bilayers were well transparent, average transparency was above 80%.
PL
W pracy przedstawiona została analiza wpływu parametrów procesu technologicznego wytwarzania cienkich warstw tlenków miedzi na ich właściwości strukturalne, optyczne oraz elektryczne. Badaniu poddane zostały warstwy wytworzone za pomocą metody stałoprądowego rozpylania magnetronowego w atmosferze mieszaniny O₂:Ar o zawartości O₂ wynoszącej odpowiednio 75% oraz 100%. Właściwości strukturalne badanych warstw określone zostały na podstawie badania metodą dyfrakcji rentgenowskiej. Właściwości optyczne scharakteryzowano na podstawie pomiaru transmisji światła, a elektryczne na podstawie charakterystyk prądowo-napięciowych. Badanie metodą XRD wykazało, że uzyskano warstwy CuO (tlenku miedzi II) w postaci tenorytu o średnim rozmiarze krystalitów wynoszącym około 13 nm. Badanie właściwości optycznych wykazało, że nie ma różnicy w transmisji światła dla promieniowania krótszego niż około 600 nm. Nieznaczne różnice zauważalne między warstwami widoczne są powyżej tej długości. Średnia wartość transmisji dla długości fali λ = 550 nm wynosiła 35%. Badanie właściwości elektrycznych wykazało, że warstwa naniesiona w mieszaninie O₂:Ar zawierającej 75% O₂ miała rezystancję wynoszącą około 17 kΩ podczas gdy rezystancja warstwy wytworzonej w atmosferze wyłącznie tlenowej wynosiła około 5 kΩ.
EN
The paper presents an analysis of the impact of the parameters of the technological process of copper oxides thin films on their structural, optical and electrical properties. Investigated films were deposited using DC magnetron sputtering method in the atmosphere of the O₂:Ar mixture with an O₂ content of 75% and 100% respectively. The structural properties of the investigated films were determined based on the X-ray diffraction method. Optical properties were characterized on the basis of light transmission measurements, and electrical properties based on current- -voltage characteristics. The XRD showed that CuO (copper oxide II) films were obtained in the form of a tenorite with an average crystallite size of about 13 nm. The investigation of the optical properties showed that there is no difference in light transmission for wavelength shorter than approximately 600 nm. Slight differences between the layers are visible above this length. The average transmission value at wavelength λ = 550 nm was 35%, so these layers can be used in transparent electronics. Testing of electrical properties showed that the layer deposited in the O₂:Ar gas mixture containing 75% of O₂ had a resistance of approximately 17 kΩ, when the resistance of the layer prepared in a pure oxygen atmosphere of approximately 5 kΩ.
PL
W pracy przedstawiona została analiza właściwości antystatycznych cienkowarstwowych powłok na bazie tlenków Hf oraz Ti w powiązaniu z ich właściwościami strukturalnymi. Cienkie warstwy badane w ramach pracy wytworzone zostały za pomocą metody rozpylania magnetronowego na podłożach SiO₂ oraz SiO₂ pokrytych warstwą tlenku indowo-cynowego o grubości 150 nm. Właściwości antystatyczne zostały określone na podstawie pomiaru czasu rozpraszania ładunku statycznego, natomiast właściwości strukturalne na podstawie badania metodą dyfrakcji rentgenowskiej XRD. Badania metodą XRD wykazały, warstwy HfO₂, (Hf0,85Ti0,15)Ox oraz TiO₂ były nanokrystaliczne, a ich średni rozmiar krystalitów wynosił poniżej 10 nm. Z kolei powłoka (Hf0,15Ti0,85)Ox była amorficzna. Dla wszystkich warstw naniesionych na SiO₂ czasy rozpraszania ładunku przekraczały 2 sekundy wynikające z przyjętego kryterium antystatyczności. Najdłuższym czasem rozpraszania charakteryzowała się warstwa amorficzna. Naniesienie warstw na podłoże SiO₂ pokryte 150 nm warstwą ITO spowodowało, że wszystkie warstwy niezależnie od ich mikrostruktury były antystatyczne, a czasy rozpraszania ładunku elektrycznego były rzędu setek milisekund.
EN
This work presents the analysis of antistatic properties of thinfilm coatings based on Hf and Ti oxides in relation to their structural properties. Investigated thin films were sputtered by the magnetron sputtering method on SiO₂ substrates and deposited SiO₂ covered with a 150 nm thick indium-tin oxide film. Antistatic properties were determined based on the measurements of static charge dissipation time, while structural properties based on X-ray diffraction. The XRD results showed, that HfO₂, Hf0.85Ti0.15x and TiO₂ thin films were nanocrystalline with an average crystallite size below 10 nm. Hf0.15Ti0.85Ox film was amorphous. For films deposited on SiO₂ the dissipation times exceeded 2 seconds, which indicated that none of them were antistatic taking into consideration with accepted cryterion. The longest dissipation time was obtained for amorphous coating. Deposition of thin films on SiO₂ substrates coated with a 150 nm thick ITO layer results in a significate decrease of static charge dissipation time to hundreds of milliseconds, independently of their structural properties.
PL
Niniejsza praca przedstawia wyniki badań elektrycznych oraz strukturalnych cienkich warstw (Ti-Cu)Ox wytworzonych metodą rozpylania magnetronowego z zaprogramowanym profilem rozkładu pierwiastków. Wytworzenie cienkich warstw zaplanowano tak, aby uzyskać gradientową zmianę koncentracji miedzi w funkcji grubości osadzonej warstwy o zadanym kształcie. Analiza składu materiałowego wykazała, że wytworzone warstwy posiadały podobny skład materiałowy wynoszący odpowiednio (Ti52Cu48)Ox oraz (Ti48Cu52)Ox oraz posiadały zadany kształt profilu rozkładu miedzi. Przeprowadzone analizy przekroi struktur wykonane za pomocą transmisyjnego mikroskopu elektronowego potwierdziły uzyskanie zarówno gradientu rozkładu miedzi o kształcie litery V, jak i gradientu rozkładu miedzi o kształcie litery U w całej objętości cienkiej warstwy. Badania elektryczne wykazały, że mimo podobnego składu materiałowego wytworzonych cienkich warstw, uzyskano różne przebiegi charakterystyk prądowo-napięciowych, a więc możliwe jest sterowanie typem efektu przełączania rezystancji przez zadanie określonego profilu rozkładu pierwiastków w danej strukturze.
EN
The present paper shows the results of electrical properties along with the investigations of the structure of the (Ti-Cu)Ox thin films layers fabricated by the magnetron sputtering. Thin films were prepared in order to achieve gradient change of the cooper concentration in the function of the thickness of the deposited layers with programmed shape of elemental profiles. Analysis of the material compositions showed, that deposited films have similar material composition respectively, (Ti52Cu48)Ox and (Ti48Cu52)Ox with programmed specific shape of the elements gradient profile. Conducted analysis of the films with the help of transmission electron microscope proved the V-shape and the U-shape gradient distribution of the cooper across the thin films. Electrical measurements have shown that despite similar material composition of the fabricated thin films, different waveforms of current-voltage characteristics were obtained, leading to the statement that it is possible to control the type of mechanism of the resistive switching effect by programming a specific distribution profile of elements in a given structure.
EN
The paper presents studies over the changes in the characteristic impedance of selected type of textile signal lines (TSLs) during mechanical loads. The article describes the construction of tested lines, the measurement method, and statistical analysis of the collected results.
EN
The present study, aims to investigate the effect of minor Zr and Nb alloying on soft magnetic and electrical properties of Fe86 (Zrx Nb1-x )7B6 Cu1 (x=1, 0.75, 0.5, 0.25) alloys. The investigated alloys were prepared through the melt spinning process. Within the examined compositional range (Nb up to 5.25 at%, respectively), the soft magnetic properties and electrical resistivity of the alloys continuously increase with increasing Nb content. However increasing the Nb content further decreases such properties. We could confirm the influence of ratio of Zr and Nb on grain growth and crystallization fraction during crystallization by using the soft magnetic properties and electrical properties.
EN
Ultra-precision testing is a very important procedure to secure the reliability of the products as well as for the technology development in the areas of semiconductor and display. Accordingly, companies manufacturing equipment for testing of semiconductor and display have been continuously executing researches for the improvement of the performances of test sockets used in test equipment. Through this study, characteristics of the materials in accordance with the mechanical and electrical properties of Ni-30wt%Co alloy and newly developed Cu-2wt%Be alloy were analyzed in order to select the probe pin material of the socket, which is a key component used in the semiconductor testing equipment. In addition, finite element interpretation was executed by using Ansys Workbench 14.0 to comparatively analyze the finite element interpretation results and experimental results. Experiment was executed for the mechanical properties including tensile strength, elasticity modulus, specific heat, thermal expansion coefficient and Contact Force, for electrical properties, experiment on surface resistance, specific resistance and electrical conductivity was executed to measure the properties. It was confirmed that the results of finite element interpretation and experiment displayed similar trend and it is deemed that the Contact Force value was superior for Be-Co alloy. Through this study, it was confirmed that the newly developed Be-Co alloy is more appropriate as probe pin material used as the core component of test socket used in the semiconductor testing equipment than the existing Ni-Co alloy.
20
PL
Nanokompozyt warstwowy a-SiOx/SiO2 został osadzony na podłożu krzemowym o orientacji (100) przez naprzemienne próżniowe naparowywanie. W ten sposób otrzymano 50 warstw naprzemiennie ułożonych SiOx oraz SiO2. Grubości poszczególnych warstw wynosiły ok. 3nm dla SiO2 oraz ok. 8 nm dla SiOx. Całkowita grubość uzyskanego nanokompozytu bez podłoża wynosiła 280 ± 15 nm. Następnie otrzymany materiał został poddany dwu godzinnemu wygrzewaniu w temperaturze 1110ºC w atmosferze azotu. Zmiennoprądowe pomiary wielkości elektrycznych wykonano w zakresie częstotliwości z przedziału od 100 Hz do 1 MHz w temperaturach od 20 K do 375 K. Przedstawiono częstotliwościowe i temperaturowe zależności pojemności, konduktywności, kąta przesunięcia fazowego, przenikalności dielektrycznej oraz tangensa kąta strat. Na tej podstawie ustalono, mechanizm przenoszenia ładunku w materiale oraz jego właściwości dielektryczne.
EN
The layered a-SiOx/SiO2 nanocomposite was deposited by alternating vacuum evaporation on a p-Si:B (100) substrate. In this way, 50 layers of alternating placed SiOx and SiO2 were obtained. The thicknesses of individual layers were approx. 3 nm for SiO2 and approx. 8 nm for SiOx.The total thickness of the obtained nanocomposite without substrate was 280 ± 15 nm. Then the material was subjected to a two hour annealing at 1100 °C under a nitrogen atmosphere to obtain silicon nanoparticles in the oxide matrix. AC measurements of electrical properties were made in the frequency range from 100 Hz to 1 MHz at temperatures from 20 K to 375 K. Frequency and temperature dependences of capacitance, conductivity, phase shift angle, dielectric permittivity and tangent of the loss angle were presented. On this basis, the mechanism of charge transfer in the material and its dielectric properties were determined. It was found that in the nanocomposite hopping conductivity and additional polarity to the matrix occur. The temperature dependence of the dielectric relaxation time was determined, on the basis of which the activation energies were calculated. Two ranges of changes in activation energy can be observed: low temperature region corresponds to a low activation energy value E10,0002 eV, while in the high temperature range, the activation energy rises many times up to E20.08 eV.
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