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EN
The article presents the results of a SnO₂ layer deposition, selected for its properties to function as either a recombination layer or an electron transporting material (ETM) layer in a potential silicon/perovskite tandem solar cell. The layer was deposited using an atomic layer deposition (ALD) method to ensure uniform coverage on the rough surface of etched silicon nanowires. The deposition process was monitored using test samples on glass by assessing surface roughness with an atomic force microscopy method and a total transmission through UV-VIS spectroscopy. The test layers were further characterised to estimate thickness using ellipsometry. The target layers, deposited on the porous surface of etched silicon nanowires, were examined using high-resolution scanning electron micro-scopy and transmission electron microscopy to evaluate the material microstructure, layer adhesion to the substrate, and the accuracy of ALD deposition on highly porous structures.
EN
One of the important directions of research in photovoltaics is the development of new thin-film technology, which can replace the currently used, more expensive bulk silicon technology. The article discusses the findings from research focused on optimizing the parameters for the deposition of silicon thin films with P-type electrical conductivity for applications in photovoltaics. The growth rate was determined depending on the change in substrate temperature using reflectometry and the influence of deposition time on optical properties was determined using UV/VIS spectroscopy. Photovoltaic structures were made on substrates with an ITO layer and their electrical parameters were measured. The authors applied the magnetron sputtering method to deposit the layers, selecting it over the commercially used the chemical vapor deposition (CVD) method. This replacement could alleviate the necessity for high temperatures and broaden the potential applications of thin-film solar cells.
EN
The paper presents the results of research on the surface topography and electrical properties of ITO thin films deposited by PVD for applications in silicon photovoltaic cells. The surface condition and chemical composition were characterized using a scanning electron microscope and the thickness and optical constants were measured using a spectroscopic ellipsometer. To compare the impact of the preparation process on the properties of layers, deposition was carried out at three different temperatures: 25, 200, and 400◦C. As the temperature increased, the surface roughness changed, which correlated with the results of structural tests. The crystallite size increased from 11 to 46 nm. This, in turn, reduced the surface resistance. The electrical properties were measured using a four-point probe method and then the prepared solar cells containing ITO thin films in their structure were examined. By controlling the deposition parameters, the surface resistance of the deposited layer (26 Ohm/✷) and the efficiency of the prepared solar cells (18.91%) were optimized. Currently, ITO has the best properties for use in optoelectronics and photovoltaics among the known TCO layers. The magnetron sputtering method is widely used in many industries. Therefore, the authors predict that TCO layers can replace currently used antireflection layers and reduce the number and dimensions of front metal contacts in solar cells.
EN
This paper presents research on the deposition of an indium tin oxide (ITO) layer which may act as a recombination layer in a silicon/perovskite tandem solar cell. ITO was deposited by magnetron sputtering on a highly porous surface of silicon etched by the metal-assisted etching method (MAE) for texturing as nano and microwires. The homogeneity of the ITO layer and the degree of coverage of the silicon wires were assessed using electron microscopy imaging techniques. The quality of the deposited layer was specified, and problems related to both the presence of a porous substrate and the deposition method were determined. The presence of a characteristic structure of the deposited ITO layer resembling a "match" in shape was demonstrated. Due to the specificity of the porous layer of silicon wires, the ITO layer should not exceed 80 nm. Additionally, to avoid differences in ITO thickness at the top and base of the silicon wire, the layer should be no thicker than 40 nm for the given deposition parameters.
EN
Purpose Surface modification techniques play an important role in shaping the physicochemical properties of surgical tools. The article discusses the problem of the destruction of surgical scalpel blades and the methods of depositing thin films on them. Design/methodology/approach Aluminium oxide thin films were deposited on the surface of surgical scalpels by atomic layer deposition (ALD) with a different number of cycles. The corrosion resistance of the blades with and without coatings was tested. The thickness of the deposited thin films was examined, and electrochemical tests were performed. Findings The ALD method allows the uniform deposition of the Al2O3 thin films on surfaces with complex shapes like a surgical scalpel. Each process cycle increases the layer by a specific value of about 0.1 nm. It is possible to control the thickness of the thin film precisely, which was confirmed by testing the thickness of the coatings with a reflectometer. Electrochemical tests have confirmed that ALD thin films are highly resistant to corrosion, which is extremely important in medical devices. The relationship between the thickness of the coating and its corrosion resistance was determined. Research limitations/implications The research conducted is the basis for further research on increasing the corrosion resistance of scalpel blades. In the next stages, multi-component layers, such as AZO, will be deposited on the scalpel blades, which could increase corrosion resistance. Practical implications During a surgical procedure involving cutting living tissue, a worn and unsharp tool is replaced with a new one, even several times. It generates a lot of medical waste. To minimise the amount of medical waste, it is proposed to use ceramic layers on the blades, thanks to which they will be resistant to corrosion for longer and thus remain sharp longer. Originality/value The PVD and CVD methods have been the most frequently reported. Still, the ALD method is characterised by high accuracy in controlling the thickness of layers and enables all elements to be covered, even in complex shapes. However, no reports of its use on scalpel blades have been identified.
EN
Al₂O₃/TiO₂ thin films were deposited onto monocrystalline silicon surfaces using an atomic layer deposition. Their surface morphology and optical properties were examined for their possible use in solar cells. The surface condition and chemical composition were characterized using a scanning electron microscope and the thickness was measured using a spectroscopic reflectometer. The refractive index and the reflection characteristics were determined. First, the optical properties of the Al₂O₃ thin filmand its influence on recombination in the semiconductor were examined. In this way, it can fulfil a double role in a solar cell. Since reflection reduction was only achieved in a narrow range, it was decided to use the Al₂O₃/TiO₂ system. Thanks to this solution, the light reflection was reduced in a wide range (even below 0.2%).
EN
The technology of manufacturing silicon solar cells is complex and consists of several stages. The final steps in succession are the deposition of antireflection layer and discharge contacts. Metallic contacts are usually deposited by the screen printing method and then, fired at high temperature. Therefore, this article presents the results of a research on the effect of heat treatment on the properties of the Al2O3 thin film previously deposited by the atomic layer deposition method. It works well as both passivating and antireflection coating. Moreover, heat treatment affects the value of the cell short-circuit current and, thus, its efficiency. The surface morphology, optical and electrical properties were investigated, describing the influence of heat treatment on the properties of the deposited layers and the manufactured solar cells.
EN
Titanium dioxide thin films have been deposited on silicon wafers substrates by an atomic layer deposition (ALD) method. There optical parameters were investigated by spectroscopic ellipsometry and UV/VIS spectroscopy. A material with a refractive index of 2.41 was obtained. Additionally, in a wide spectral range it was possible to reduce the reflection from the silicon surface below 5%. The Raman spectroscopy method was used for structural characterization of anatase TiO2 thin films. Their uniformity and chemical composition are confirmed by a scanning electron microscope (SEM) energy dispersive spectrometer (EDS).
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