Wyniki wyszukiwania - BazTech

1

Wpływ dodatku mikroproszków węglika krzemu (SiC) i węglika wolframu (WC) na termiczno-dynamiczne właściwości mechaniczne oraz temperaturę zeszklenia epoksydowych kompozytów ablacyjnych

Kucharczyk Wojciech, Bogucki Marcin, Stawarz Sylwester, Samociuk Waldemar, Białkowska Anita, Struž Jiří, Krzysiak Zbigniew

Przemysł Chemiczny

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2024

|

T. 103, nr 6

677--682

PL

Zbadano termiczno-dynamiczne właściwości mechaniczne dwóch rodzajów kompozytów epoksydowych (na bazie żywicy Epidian 52 utwardzanej trietylenotetraaminą i żywicy Epidian 112 utwardzanej poliaminoamidem) modyfikowanych różną zawartością cząstek węgliku krzemu SiC i węgliku wolframu WC (10-56% każdej frakcji wagowej proszku w kompozycie). Ustalono wpływ składników na właściwości kompozytów. Przedstawiono typowe struktury SEM badanych próbek.

EN

Two types of epoxy resin-based composites filled with different contents of SiC and WC microparticles (10-56% of each powder mass fraction in the composite) were tested by dynamic-thermal analysis (DMA). The tests were performed using 2 bending modes. Based on the temp. characteristics of the DMA-tested materials, such as storage modulus, loss modulus and damping coeff., the glass transition temp. range was detd. Typical SEM structures of the studied samples were shown.

2

Charakterystyki i parametry tranzystora SiC BJT

Patrzyk Joanna, Zarębski Janusz, Bisewski Damian

Przegląd Elektrotechniczny

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2024

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R. 100, nr 10

289--293

PL

W pracy przedstawiono wyniki pomiarów charakterystyk statycznych oraz wybranych na ich podstawie wartości podstawowych parametrów roboczych tranzystora bipolarnego wykonanego w technologii węglika krzemu. Przedyskutowano przebiegi tych charakterystyk oraz przeprowadzono ich symulacje za pomocą programu SPICE. W symulacjach wykorzystano zarówno wartości parametrów wbudowanego w programie SPICE modelu tranzystora bipolarnego, zaczerpnięte ze strony producenta, jak i autorskie wartości parametrów otrzymane z wykorzystaniem procedury estymacji.

EN

The paper presents the results of measurements of static characteristics and the values of the basic operating parameters of a BJT transistor made of silicon carbide. The shape of these characteristics was discussed and their simulations were performed using the bipolar transistor model built in the SPICE program. The program used in the simulations both parameter values taken from the manufacturer's website, and the parameter values obtained using the estimation procedure, respectively.

3

Węglik krzemu włóknisty - frakcja wdychalna i włókna respirabilne. Dokumentacja proponowanych wartości dopuszczalnych poziomów narażenia zawodowego

Bujak-Pietrek Stella, Rogalska Aneta

Podstawy i Metody Oceny Środowiska Pracy

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2024

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Nr 2 (120)

77-115

PL

Węglik krzemu (SiC) występuje w kilku postaciach: jako niewłóknisty pył, włókna polikrystaliczne lub jeden z ponad 150 rodzajów pojedynczych kryształów włóknistych (określanych jako wiskersy lub wąsy). Niewłókniste formy czystego węglika krzemu mają niską toksyczność dla ludzi i zwierząt doświadczalnych. Włókna węglika krzemu często są włóknami respirabilnymi i w zależności od ich średnicy i proporcji długości do średnicy mają w eksperymentalnych modelach zwierzęcych działanie podobne do działania azbestu krokidolitowego, tj. powodują zwłóknienia płuc, zwłóknienia opłucnej, raka płuca i międzybłoniaka. Badania in vitro również sugerują, że włókna węglika krzemu mają toksyczność podobną do toksyczności włókien amfibolowych. Badania u ludzi wykazały znaczną retencję SiC, z tworzeniem ciał żelazistych, w płucach pracowników, zwłóknienie (pylicę) płuc i nowotwory płuc. Dane kliniczne i epidemiologiczne u ludzi w połączeniu z danymi doświadczalnymi pochodzącymi z badań na zwierzętach wskazują, że zagrożenia dla zdrowia wynikające z narażenia na włókna SiC należy uznać za takie same, jak te powodowane przez azbest krokidolitowy. Dlatego narażenie na włókna węglika krzemu w powietrzu stanowisk pracy powinno być ograniczone do poziomu ustalonego dla azbestu, tj. 0,1 włókna/cm3. W Polsce dotychczas została ustalona i obowiązuje wartość najwyższego dopuszczalnego stężenia jedynie dla frakcji wdychalnej węglika krzemu niewłóknistego – 10 mg/m3 z notacją dotyczącą oznaczania stężeń frakcji respirabilnej krzemionki krystalicznej (DzU 2018, poz. 1286). Zaproponowano następujące wartości NDS dla węglika krzemu włóknistego: 10 mg/m3 – frakcja wdychalna (obowiązuje oznaczanie stężeń frakcji respirabilnej krzemionki krystalicznej) i 0,1 włókna/cm3 – włókna respirabilne (włókna o średnicy [d] <3 μm, długości [l] >5 μm i wskaźniku kształtu [l: d] ≥3: 1).

EN

Silicon carbide (SiC) occurs as non-fibrous dust, polycrystalline fibers, or one of more than 150 types of single fibrous crystals (known as whiskers). The non-fibrous, pure silicon carbide have low toxicity for humans and laboratory animals. Silicon carbide fibers are often respirable fibers and, depending on their diameter and aspect ratio length to diameter, have the effects similar to crocidolite asbestos in experimental animal models, i.e. they cause lung fibrosis, pleural fibrosis, lung cancer and esothelioma. In vitro studies also suggest that silicon carbide fibers have a similar toxicity to amphibole fibers. Human studies have shown significant SiC retention with the formation of ferrous bodies in workers’ lungs, fibrosis (pneumoconiosis) and lung tumors. Human clinical and epidemiological data, combined with animal experimental data, indicate that the health risks from exposure to SiC fibers should be considered to be the same as those caused by crocidolite asbestos. Therefore, exposure to silicon carbide fibers in the workplace air should be limited to the level established for asbestos - 0.1 fibers/cm3. In Poland, the values of the occupational exposure limit have been established only for the inhalable fraction silicon carbide non-fibrous - 10 mg/m3. The following occupational exposure limit values are proposed for fibrous silicon carbide: 10 mg/m3 - inhalable fraction (the concentration of the crystalline silica respirable fraction must be determined) and 0.1 fibers/cm3 - respirable fibers (fibers with diameter [d] < 3 μm, length [l] > 5 μm and aspect ratio [l:d] ≥ 3:1).

4

Electrospun carbon nanofibers (CNFs) modified with needle-like SiC nanostructures

Pazdyk-Słaby Weronika, Długoń Elżbieta, Zientara Dariusz, Fraczek-Szczypta Aneta

Chemical and Process Engineering : New Frontiers

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2024

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Vol. 45, nr 3

art. no. e74

EN

Electrospun carbon nanofibers (CNFs) are an excellent material which can possess a wide range of properties through controlling the parameters of the electrospinning process, as well as through thermal treatment. At the same time, CNFs are an excellent substrate for carrying out modifications, both volumetric, at the stage of precursor preparation, and surface modifications. Different methods of introducing various silicon carbide (SiC) precursors into the spinning solution enables the formation of needleshaped SiC nanostructures on the CNF surface. This work presents an attempt to obtain nanofibrous carbon materials modified in volume and on the surface with SiC precursors, along with their characteristics. The most promising method of creating needle-like SiC nanostructures on the surface of CNFs is the use of volume modification with polysiloxane and silanization of the surface of the CNFs in a organosilicon sol solution.

5

Modelowanie stałoprądowych charakterystyk tranzystorów SiC-MOS mocy w programie SPICE

Bisewski Damian, Lubicz-Krośnicka Emilia

Przegląd Elektrotechniczny

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2023

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R. 99, nr 9

289--292

PL

Artykuł dotyczy problematyki komputerowego modelowania charakterystyk oraz parametrów tranzystorów MOS mocy wykonanych z węglika krzemu (SiC). W ramach realizacji pracy sformułowano oraz zaimplementowano w programie PSPICE autorski model rozważanego tranzystora, który bazuje na zmodyfikowanym modelu Shichmana-Hodgesa krzemowego tranzystora MOS. Opracowany model, w porównaniu do innych istniejących modeli tranzystora MOS wbudowanych w popularnych programach komputerowych, modeli firmowych, a także modeli opisanych w literaturze, cechuje się dużą dokładnością. Ponadto, zaproponowany model charakteryzuje się stosunkowo nieskomplikowaną budową, tzn. w zależnościach analitycznych opisujących ten model występuje zaledwie kilkanaście parametrów, których wartości można wyznaczyć korzystając z informacji zawartych w kartach katalogowych konkretnych typów tranzystorów albo na podstawie wyników pomiarów.

EN

The paper deals with the problem of computer modelling of characteristics and parameters of power MOSFETs made of silicon carbide (SiC). An original model of the considered transistor was formulated and implemented in the PSPICE program, which is based on the ShichmanHodges model of the silicon MOS transistor modified by the authors. In comparison to other existing MOS transistor models embedded in popular computer programs as well as models described in literature, the developed model exhibits high accuracy. Furthermore, the proposed model features a relatively simple structure, meaning that it includes only a few parameters in its analytical description. The values of these parameters can be determined based on the information provided in the datasheets of specific transistor types or through measurement results.

6

Modelowanie diod SiCPiN w programie SPICE

Zarębski Janusz, Bisewski Damian, Kaczerski Krystian

Przegląd Elektrotechniczny

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2023

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R. 99, nr 10

220--223

PL

W pracy przeprowadzono ocenę możliwości wykorzystania programu SPICE do modelowania charakterystyk statycznych oraz czasowych przebiegów w zakresie przełączania diod PiN wykonanych w technologii węglika krzemu (SiCPiN). Przedmiotem badań są dostępne komercyjnie diody SiCPiN firmy GeneSiC. Wykazano, że wykorzystanie w symulacjach firmowych wartości parametrów występujących we wbudowanym w programie SPICE modelu diody prowadzą do istotnych różnic ilościowych, a nawet jakościowych pomiędzy kształtem charakterystyk rozważanych przyrządów półprzewodnikowych otrzymanych z obliczeń i pomiarów. Przeprowadzona przez autorów estymacja wartości tych parametrów doprowadziła do znacznej poprawy wyników symulacji

EN

In the paper, an assessment was carried out on the feasibility of using the SPICE program to model the static characteristics and switching waveforms of silicon carbide PiN diodes (SiCPiN). The focus of the research are commercially available SiCPiN diodes from GeneSiC. It was shown that using the parameter values provided by the built-in SPICE diode model could lead to significant quantitative and even qualitative differences in the shape of the characteristics of the considered semiconductor devices, compared to the results obtained from calculations and measurements. The authors conducted an estimation of these parameter values, leds to a significant improvement in the simulation results.

7

Effect of production process parameters on densification, microstructure and selected properties of spark plasma sintered Al4Cu-xSiC composites

Madej Marcin, Leszczyńska-Madej Beata, Wąsik Anna, Kopeć-Surzyn Anna, Korban Patryk, Garbiec Dariusz

Composites Theory and Practice

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2023

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R. 23, nr 3

173--180

EN

The paper presents the results of a study on the microstructure and hardness measurements of Al4Cu-xSiC (x = 5, 10, 20 and 30 wt.%) composites produced by spark plasma sintering (SPS). The sintering process was carried out in an HP D 25/3 plasma sintering furnace in a vacuum atmosphere, with sintering temperatures of 580 and 600°C and a densification pressure of 50 MPa. The heating rate was 100°C/min and the isothermal holding time at the sintering temperature was 2.5 min. As a reference material, the AlCu matrix was sintered under the same conditions. As a result, composites with a near-full density of 96.5-99.5% were obtained. Microstructure studies were performed employing the techniques of light microscopy, scanning, and transmission electron microscopy, along with analysis of the chemical composition in microareas. The test results did not reveal remarkable differences in the microstructure of the investigated composites sintered at 580 and 600°C. The sinters have a fine-grained microstructure with a strengthening phase located at the grain boundaries; locally, pores are visible. Increasing the SiC content in the composites promotes the formation of agglomerates of these particles. It was proven that a higher sintering temperature has a positive effect on the hardness of the studied composites.

8

Effect of Volume Percentage of Reinforcement on the Microstructure and Mechanical Properties of an Al6061-T6/SiC Surface Composite Fabricated Through Friction Stir Processing

Ansari Abdul Jabbar, Anas Mohd

Advances in Science and Technology. Research Journal

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2023

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Vol. 17, no. 2

247--257

EN

In this research, aluminium metal matrix composites (AMMCs) have been manufactured through friction stir processing (FSP) by reinforcing nano-sized SiC particles in an Al6061-T6 alloy. The consequences of the volume percentage of reinforced SiC particles on mechanical properties and microstructural features were analyzed for the developed AMMCs. Microstructural evaluation of a cross-section of a friction stir processed (FSPed) sample has been conducted through Electron backscatter diffraction (EBSD) Energy dispersive spectroscopy (EDS) and a scanning electron microscope (SEM) technique. Microhardness tests were conducted athwart the cross section of FSPed specimen to obtain microhardness feature. A tensile test of FSPed samples has been conducted on a universal testing machine (UTM). Homogeneous distributions of SiC particles were found in the stir zone without any consolidation of particles. The size of the reinforcement particles was decreased slightly by increasing the volume fraction. It has been found that increasing the volume fraction of SiC particles, enhance the tensile strength and microhardness, but decreases the ductility of the aluminium. The maximum ultimate tensile strength (UTS) and microhardness were obtained as 390 MPa and 150.71 HV, respectively, at 12% volume percentage of reinforcement particles. UTS and microhardness of the FSPed Al/SiC have been improved by 38.29% and 59.48% respectively as compared to Al6061-T6. The brittle nature of the FSPed Al/SiC has increased due to a rise in the volume fraction of nanosized SiC particles, which causes a decrease in ductility.

9

Rola odlewnictwa precyzyjnego w inżynierii materiałowej

Wiśniewski Paweł

Szkło i Ceramika

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2022

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R. 73, nr 3

30--37

PL

W artykule przedstawiono zagadnienia związane z inżynierią materiałową, ceramiką i odlewnictwem precyzyjnym. Opisano historię i przebieg procesu odlewania detali i części silników lotniczych metodą traconego wosku. Manuskrypt zawiera również generalne informacje o spoiwach, proszkach, masach formierskich, formach odlewniczych i nadstopach niklu. Zaprezentowano podstawowe dane o spoiwach zawierających nanocząstki ceramiczne, modelach woskowych, na które nanoszone są masy lejne oraz o SiC - jednym z perspektywicznych proszków formierskich.

EN

The paper presents the main issues related to materials engineering and technology, ceramics and precision casting process. The history and methodology of the lost-wax casting process of elements and aircraft engine parts is described. The manuscript also contains general information on binders, powders, molding compounds, foundry molds and nickel superalloys. Basic data on binders containing ceramic nanoparticles, wax models and SiC - one of the prospective molding powders are presented.

10

Parameter optimization for wire-cut electrical discharge machining of stir cast AA6063 alloy/SiC (black and green) using Taguchi method with grey relational analysis

Raj Kumar R., Prasanna Gnana, Hikku G. S.

Materials Science Poland

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2022

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Vol. 40, No. 1

68--83

EN

The present investigation aimed to determine the optimal parameters for wire-cut electrical discharge machining (WEDM) for stir cast aluminum alloy AA6063 at 850°C reinforced with 10 wt.% green SiC (SiCg) and black SiC (SiCb) particles. The WEDM machining parameters, such as pulse on time (TON), wire feed (WF) rate, and flushing pressure (FP) of the resultant stir cast AA6063/SiCb and AA6063/SiCg composites, were optimized using the Taguchi method with L9 orthogonal array to estimate the responses, such as surface roughness and metal removal rate. Further, through grey relational analysis, the finest parameters for WEDM of AA6063/SiCb and AA6063/SiCg composites were evaluated as TON = 50 μs, WF rate = 18 m/min, and FP = 3 MPa. With the optimum parameters obtained, conformational experiments were conducted, and the scanning electron microscopic images were recorded, along with the energy-dispersive X-ray (EDX) spectroscopic data of the worn surfaces and debris. From the EDX mapping images of the machined surface, it was evident that AA6063/SiCb displays a more polished surface than AA6063/SiCg. However, for applications requiring a high metal removal rate, AA6063/SiCg displays better results than AA6063/SiCb.

11

Various Aspects of Application of Silicon Carbide in the Process of Cast Iron Melting

Janerka Krzysztof, Kostrzewski Łukasz, Stawarz Marcin, Jezierski Jan, Szajnar Jan

Archives of Metallurgy and Materials

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2022

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Vol. 67, iss. 3

1093--1098

EN

The article discusses benefits associated with the use of silicon carbide in the process of melting gray cast iron and ductile cast iron in induction electric furnaces. It presents the analysis of the impact of various charge materials and the addition of a variable amount of SiC and FeSi to the fixed charge when melting cast iron of grades GJS 400-15 and GJS 500-7 on mechanical properties and microstructure. Moreover, the article includes an analysis of the efficiency of carburization and the increase in the content of silicon during the application of SiC. The article also presents the results of the study of primary modification using silicon carbide at the minimum temperature of Temin eutectic and Tsol solidus. Based on analysis of the literature, conducted research, and calculations, it was found that the addition of silicon carbide has a beneficial impact on the properties of melted cast iron. The addition of SiC in the charge increases the content of C and Si without increasing the amount of contaminations. The addition of SiC at reduced pig iron presence in the charge decreases production costs, while the use of SiC as an inoculant increases both Temin and Tsol, which is beneficial from the point of view of cast iron nucleation.

12

Reactive ion etching of 4H-SiC with BCl3 plasma

Stonio Bartłomiej, Kwietniewski Norbert, Firek Piotr, Sochacki Mariusz

Przegląd Elektrotechniczny

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2021

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R. 97, nr 2

57--59

EN

The paper presents the results of plasma assisted reactive ion etching (RIE) of silicon carbide (4H-SiC). with a mixture of Ar and BCl3. The influence of input parameters such as process time, pressure, power and a ratio of working gases (Ar and BCl3) on the etch rate was investigated. The windows in SiO2 layer fabricated by PECVD process were patterned by photolithography. A stylus profilometry was a basic method of depth measurements after the etching processes.

PL

W pracy zaprezentowano wyniki reaktywnego trawienia jonowego (Reactive Ion Etching – RIE) węglika krzemu (4H-SiC) wspomaganego plazmą na bazie gazów roboczych Ar+BCl3. Przeprowadzono analizę wpływu parametrów procesu trawienia: czasu procesu, ciśnienia w komorze roboczej, mocy i stosunku gazów roboczych (Ar i BCl3) na głębokość i szybkość trawienia węglika krzemu. Jako maskę w procesach użyto osadzonego plazmowo SiO2, w którym zostały zdefiniowane okna przy pomocy fotolitografii. Pomiary głębokości po procesach trawienia zrealizowane zostały metodą profilometrii.

13

Modelling of changes in the resistivity of semi-insulating materials

Suproniuk Marek

Metrology and Measurement Systems

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2021

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Vol. 28, nr 3

581--592

EN

Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).

14

TiAl-based Ohmic Contacts to p-type 4H-SiC

Martychowiec Agnieszka, Kwietniewski Norbert, Kondracka Kinga, Werbowy Aleksander, Sochacki Mariusz

International Journal of Electronics and Telecommunications

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2021

|

Vol. 67, No. 3

459--463

EN

This paper describes successfully formed ohmic contacts to p-type 4H-SiC based on titanium-aluminum alloys. Four different metallization structures were examined, varying in aluminum layer thickness (25, 50, 75, 100 nm) and with constant thickness of the titanium layer (50 nm). Structures were annealed within the temperature range of 800°C - 1100°C and then electrically characterized. The best electrical parameters and linear, ohmic character of contacts demonstrated structures with Al layer thickness equal or greater than that of Ti layer and annealed at temperatures of 1000°C or higher.

15

Towards a viable method of reusing silicon carbide. Physicochemical analyses in the studies on the industrial application of the material

Niemczyk-Wojdyła Anna, Fornalczyk Agnieszka, Willner Joanna, Zawisz Rafał

Environment Protection Engineering

|

2021

|

Vol. 47, nr 4

43--52

EN

The paper presents an investigation on the feasibility of recovery of the highly valuable silicon carbide (SiC) from the slurry waste generated from silicon wafer production in the photovoltaic and semiconductor industry. Compared to the other techniques of recycling, a facile and low-cost method of waste treatment via heat drying followed by low-energy mixing in a shaker mixer was proposed. As the result of the treatment, the slurry waste was converted into a powdered form with dominant content of SiC. Separated SiC material was characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray powder diffraction, and sieve analysis. In addition, analyses of the bulk density, moisture content and melting test were carried out. As was confirmed by the physicochemical analyses, the dominant sieve fraction was in the range of 0.1-0.06 mm, the purity level was a minimum 99% mass of SiC, the moisture content - 0.3%, the bulk density - 1.3 g/cm3. The physicochemical characteristics of the material were crucial for understanding the material performance, assessment of the material quality and determining the perspective directions of the industrial application. The studies revealed that the material exhibited a high application potential as abrasive, especially in abrasive grinding and waterjet cutting.

16

Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load

Bąba Sebastian

Bulletin of the Polish Academy of Sciences. Technical Sciences

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2021

|

Vol. 69, nr 3

art. no. e137386

EN

The main drawback of any Design for Reliability methodology is lack of easy accessible reliability models, prepared individually for each critical component. In this paper, a reliability model for SiC power MOSFET in SOT – 227 B housing, subjected to power cycling, is presented. Discussion covers preparation of Accelerated Lifetime Test required to develop such reliability model, analysis of semiconductor degradation progress, samples post-failure analysis and identification of reliability model parameters. Such model may be further used for failure prognostics or useful lifetime estimation of High Performance Power Supplies.

17

An active power filter based on a hybrid converter topology – Part 1

Gwóźdź Michał, Ciepliński Łukasz

Bulletin of the Polish Academy of Sciences. Technical Sciences

|

2021

|

Vol. 69, nr 1

art. no. e136218

EN

This paper presents a concept of a shunt active power filter, which is able to provide more precise mapping of its input current drawn from a power line in a reference signal, as compared to a typical filter solution. It can be achieved by means of an interconnection of two separate power electronics converters making, as a whole, a controlled current source, which mainly determines the quality of the shunt active filter operation. One of these power devices, the “auxiliary converter”, corrects the total output current, being a sum of output currents of both converters, toward the reference signal. The rated output power of the auxiliary converter is much lower than the output power of the main one, while its frequency response is extended. Thanks to both these properties and the operation of the auxiliary converter in a continuous mode, pulse modulation components in the filter input current are minimized. Benefits of the filter are paid for by a relatively small increase in the complexity and cost of the system. The proposed solution can be especially attractive for devices with higher output power, where, due to dynamic power loss in power switches, a pulse modulation carrier frequency must be lowered, leading to the limitation of the “frequency response” of the converter. The concept of such a system was called the “hybrid converter topology”. In the first part of the paper, the rules of operation of the active filter based on this topology are presented. Also, the results of comparative studies of filter simulation models based on both typical, i.e. single converter, and hybrid converter topologies, are discussed.

18

Przekształtniki tranzystorowe działające w trybie prądu trójkątnego

Krzemiński Zbigniew

Przegląd Elektrotechniczny

|

2020

|

R. 96, nr 7

36--41

PL

Przekształtniki oparte na węgliku krzemu mogą być analizowane jako źródła napięcia lub prądu niezależnie od topologii przy odpowiednich parametrach filtru wyjściowego. Szczególnie interesujące są falowniki napięcia działające w trybie prądu trójkątnego. W referacie przedstawiono sterowanie trójfazowym falownikiem napięcia posiadającym właściwości źródła prądu. Pokazano, jak dobrać parametry filtru wyjściowego falownika. Oceniono sprawność systemów z falownikami działającymi w trybie prądu trójkątnego.

EN

Converters based on silicon carbide can be analysed as voltage or current sources, regardless of topology with appropriate parameters of the output filter. Voltage inverters operating in triangular mode are particularly interesting. The paper presents control of a three-phase voltage inverter having the properties of a current source. It was shown how to choose the parameters of the inverter output filter. The efficiency of systems with inverters operating in triangular current mode was assessed.

19

Modelowanie charakterystyk Cj(u) tranzystora SiC-JFET

Bargieł Kamil

Przegląd Elektrotechniczny

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2020

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R. 96, nr 12

131--133

PL

W pracy omówiono problem modelowania wpływu wybranych czynników na właściwości tranzystora polowego wykonanego z węglika krzemu. Przeprowadzono badanie przydatności wbudowanego modelu tranzystora JFET w programie SPICE do analizy właściwości tego przyrządu półprzewodnikowego. Przedstawiono obliczenia zmodyfikowanym modelem tranzystora JFET z węglika krzemu, pokazujące poprawę dokładności modelowania. Ocenę dokładności zmodyfikowanego modelu przeprowadzono przez porównanie zmierzonych i obliczonych charakterystyk pojemnościowo-napięciowych.

EN

The paper discusses the problem of modelling the influence of selected factors on the properties of a field effect transistor made of silicon carbide. A study of the suitability of the built-in model of the JFET transistor in SPICE to analyze the properties of the semiconductor device. Calculations with a modified model silicon carbide JFET are presented. Showing an improvement in modelling accuracy. The accuracy of the modified model was performed by comparing the measured and calculated capacitive-voltage characteristics.

20

Measurements of transient thermal impedance of SiC BJT

Szelągowska Joanna, Bisewski Damian, Zarębski Janusz

Przegląd Elektrotechniczny

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2020

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R. 96, nr 2

178--181

EN

The paper presents the computer-aided method of measuring of the transient thermal impedance of SiC BJTs. The advantages of this method are illustrated by means of measurements of the silicon carbide BJT operating at the different cooling conditions.

PL

W pracy przedstawiono komputerową metodę pomiaru przejściowej impedancji termicznej tranzystora SiC BJT. Zalety tego sposobu zilustrowano za pomocą pomiarów tranzystora SiC BJT pracującego w różnych warunkach chłodzenia.