PL
 |
EN
Preferencje help
Polish version English version Język
Widoczny [Schowaj] Abstrakt
Liczba wyników

Znaleziono wyników: 4

Liczba wyników na stronie
first rewind previous Strona / 1 next fast forward last
Wyniki wyszukiwania
Wyszukiwano:
w słowach kluczowych:  temperature characteristics
help Sortuj według:

help Ogranicz wyniki do:
first rewind previous Strona / 1 next fast forward last
1
Content available remote Resistive memory physical mechanism in a thin-film Ag/YBa2Cu3O7-x/Ag structure
Waśkiewicz J., Gołębiowski J.
Przegląd Elektrotechniczny
|
2015
|
R. 91, nr 11
313-317
EN
This paper presents results of experimental research on the electro-resistance memory effect in a thin-film Ag/YBa2Cu3O7-x/Ag structure at temperatures of 78K to 300K. This phenomenon was explained by processes of destruction and recovery the oxygen-depleted layers situated close to electrodes and within the superconductor volume. The processes occur through ion electro-diffusion by numerous oxygen vacancies existing in perovskite-type materials.
PL
W pracy przedstawiono wyniki badań doświadczalnych zjawiska pamięci elektrorezystancyjnej w strukturze cienkowarstwowej Ag/YBa2Cu3O7-x/Ag w temperaturach od 78K do 300K. Zjawisko to wyjaśniono procesami likwidacji i odtwarzania warstw zubożonych w jony tlenu, znajdujących się w sąsiedztwie elektrod oraz w objętości nadprzewodnika. Procesy te zachodzą na drodze elektrodyfuzji jonów poprzez liczne wakansy tlenowe obecne w materiałach typu perowskitu.
2
Content available remote Resistive memory effect in a thin-film structure based on YBa2Cu3O7-x superconductor
Gołębiowski J., Waśkiewicz J.
Przegląd Elektrotechniczny
|
2013
|
R. 89, nr 8
83--86
EN
The paper presents results of the experimental research in which the electro-resistance memory effect have been observed in a thin-film structure based on a high-temperature YBa2Cu3O7-x superconductor exposed to electric current and an attempt to interpret the physical mechanism of that effect based on the processes of oxygen ion or electron trapping.
PL
W pracy przedstawiono wyniki badań doświadczalnych, w których zaobserwowano elektrorezystancyjne zjawisko pamięci w strukturze cienkowarstwowej opartej na nadprzewodniku wysokotemperaturowym YBa2Cu3O7-x poddanym działaniu prądu elektrycznego, oraz przeprowadzono próbę interpretacji mechanizmu fizycznego tego zjawiska w oparciu o procesy pułapkowania jonów tlenu albo elektronów.
3
Content available remote A study on temperature characteristics of green silicon photodetector
Fu X., Yao S., Tao G., De M.
Optica Applicata
|
2010
|
Vol. 40, nr 4
935--941
EN
Green silicon photodetector is successfully developed on the substrate of n-type single-crystal (100) silicon. To improve its performance, the detector is optimized by optimizing the p-n junction depth xj and the thickness of antireflection layer to reduce dark current, shorten response time and increase sensitivity. The spectrum response SNR can be over 104 within the wavelength range of 500-600 nm and the peak of spectral responsivity is 0.48 A/W at about 520 nm. The temperature characteristics of the dark current at reverse bias and photocurrent at zero bias are emphatically investigated. Firstly, the temperature behavior of dark current at 10 V reverse bias voltage and temperature range of 253-323 K is studied. Results show that dark current is dominated by generation-recombination current Igr the temperature range of 253-283 K and it is dominated by traps tunneling current Itt at the temperature range of 283-323 K. Secondly, the temperature behavior of photocurrent at zero bias and temperature range of 213-353 K is discussed. Results show that photocurrent increases as temperature increases below room temperature and almost holds the line over room temperature. Consequently, photodetector fulfils quality requirements.
4
Content available remote Tracing temperature characteristics in diode-transistor circuits having multiple DC solutions
Tadeusiewicz M., Hałgas S.
Bulletin of the Polish Academy of Sciences. Technical Sciences
|
2007
|
Vol. 55, nr 3
317-323
EN
The paper deals with circuits, composed of bipolar transistors, diodes, resistors and independent voltage sources, having multiple DC solutions. An algorithm for tracing temperature characteristics, expressing the output signal in terms of the chip temperature, is developed. It is based on the efficient method for finding all the DC solutions sketched in this paper. The algorithm gives complete characteristics which are multivalued and usually composed of disconnected branches. On the other hand the characteristics provided by SPICE are fragmentary, lose some branches or exhibit apparent hysteresis.
first rewind previous Strona / 1 next fast forward last
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.