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3 Materials Science Poland

3 2006

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Photoemission study of CeRh(1-x)PdxAl. The effect of Pd doping on the electronic structure

Głogowski W., Ślebarski A.

Materials Science Poland

2006

Vol. 24, No. 3

551--555

In view of a contrasting behaviour of Pd-containing and Rh-containing systems, we investigate solid solutions CeRh1-xPdxAl in order to determine the dependence of their electronic properties on the number of the conduction electrons. We present structural and X-ray photoemission spectroscopy (XPS) data for CeRh1-xPdxAl. We also discuss the influence of the number of free electrons in the conduction band on the stability of the crystallographic structure and the occupation number of the f-shell.

Hall effect in strongly correlated electron systems

Tran V.H.

Materials Science Poland

2006

Vol. 24, No. 3

669--673

This work provides a brieft survey of the Hall effect data collected on some strongly correlated electron systems. The experimental results illustrate the behaviour of heavy-fermion system UCu5Al, heavy-fermion semiconductor U2Ru2Sn, ferromagnetic sueperconductor under pressure UGe2, and ferromagnet with a 2D weak localization effect UCo0.5Sb2.

Electronic structure of Ce2Rh3Al9

Goraus J., Ślebarski A., Deniszczyk J.

Materials Science Poland

2006

Vol. 24, No. 3

563--568

We have investigated the XPS spectra of Ce2Rh3Al9 compound and calculated DOS by using the FP-LAPW (Full Potential Linear Augmented Plane Wave) and TB-LMTO-ASA (Tight Binding Linear Muffin Tin Orbitals) methods. The overall agreement between the calculated and the measured XPS valence band spectra is good. Analysis of the 3d XPS (X-ray Photoemission) spectra, using the Gunnarson-Schonhammer theory, suggests a mixed valence behaviour of Ce. FP-LAPW calculations show a half-metallic behaviour of Ce2Rh3Al9, whereas from LMTO calculations results a semiconducting and nonmagnetic ground state. This result is, however, in contradiction to the resistivity (T) experimental observation, which has not shown an activated behaviour. We attribute a possible appearance of the semiconducting/halfmetallic gap for Ce2Rh3Al9 to an atomic disorder.