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2 Optica Applicata

2 2001

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Optical properties of electron beam deposited lutetium oxide thin films

Wiktorczyk T

Optica Applicata

2001

Vol. 31, nr 1

83-92

Lu/sub 2/O/sub 3/ thin-film coatings of a thickness 0.1-1.3 mu m were deposited onto quartz plates by an electron beam gun. Optical measurements were carried out for the wavelengths lambda =0.2 mu m-2.5 mu m. All fabricated coatings were highly transparent in the spectral range from 0.3 mu m to 2.5 mu m. Optical constants of Lu/sub 2/O/sub 3/ films have been determined from the spectrophotometrically measured transmittance. The dispersion n( lambda ) and extinction k( lambda ) curves in the spectral range considered have been presented and analysed. The refractive index for Lu/sub 2/O/sub 3/ films has been estimated as 1.84 at 0.55 mu m. The characteristics of the real and imaginary parts of the dielectric function epsilon *(v) are also presented. Values of epsilon '/sub infinity /=323-3.53 have been obtained as the high-frequency optical relative permittivity for Lu/sub 2/O/sub 3/ thin films.

Ellipsometry in optical studies of thin films conducted at the Institute of Physics of Wroclaw University of Technology

Żukowska K., Oleszkiewicz E.

Optica Applicata

2001

Vol. 31, nr 1

35-51

Ellipsometry is a very powerful and totally nondestructive technique for determining optical constants, film thickness in multilayered systems, surface and interfacial roughness and material microstructure. Ellipsometric measurements can be made in vacuum, air and other environments. Ellipsometry has traditionally been used to determine film thickness and optical constants of dielectrics and optical coatings, semiconductors and heterostructures, magneto-optic, magnetic and opto-electronic materials, electrochemical, biological and medical systems and in surface modifications and surface roughness investigations. In situ measurements during crystal growth or material deposition are useful to study constituent fractions (including void fractions) in deposited or grown materials, surface oxide formation and film growth kinetics. Ellipsometric studies of metal, dielectric, semiconductor and organic layers carried out at the Institute of Physics of Wroclaw University of Technology by members of Thin Films Group are presented.