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Od fal spinowych do gigantycznego magnetooporu (GMR) i dalej

Grunberg P. A.

Postępy Fizyki

2009

T. 60, z. 2

55-66

The influence of Ge on antiferromagnetic coupling in Fe/Si multilayers

Wandziuk P., Luciński T., Kopcewicz M.

Materials Science Poland

2006

Vol. 24, No. 3

861--865

The magnetic and structural properties of sputtered Fe/Ge, Fe/Ge/Si/Ge and Fe/Si/Ge/Si multilayers were studied. Magnetization measurements revealed the absence of antiferromagnetic coupling for Ge spacer. It was found that during the multilayer deposition a 0.5 nm thick Fe layer at each Fe/Ge interface became nonferromagnetic leading to formation of antiferromagnetic structures. Mössbauer spectra showed the existance of ferro- and/or antiferromagnetic structures at Fe/Ge interfaces, and ferromagnetic and paramagnetic structures at Fe/Si interfaces. We have found that substitution of Si by at least 0.5 nm of Ge in the 1.1 nm thick Si spacer led to disappearance of antiferromagnetic coupling in the Fe/Si multilayers.