Wyniki wyszukiwania - BazTech

1

Cząstki typu Janus : otrzymywanie, właściwości i zastosowanie

Gołąbiewska Anna, Głowienke Hanna, Sowik Jakub, Malankowska Anna

Wiadomości Chemiczne

|

2024

|

[Z] 78, 3-4

279--302

EN

Janus particles are a special class of materials whose uniqueness is based primarily on the lack of central symmetry of the particles, which causes their surfaces to have at least two different physical or chemical properties. Due to their asymmetric structure, Janus-type nanoparticles are used in the fields of chemistry, physics, engineering, and medicine. The work presents three groups of Janus particles: semiconductor-semiconductor, semiconductor-metal and metal-metal, and their methods of preparation and their applications.

2

Przemysłowe akceleratory elektronów i ich zastosowania w technologiach radiacyjnych zastosowanie technologii radiacyjnych do modyfikacji przyrządów półprzewodnikowych : wdrożenia przemysłowe

Bułka Sylwester

Elektronika : konstrukcje, technologie, zastosowania

|

2023

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Vol. 64, Nr 9

21--24

PL

Modyfikacja przyrządów półprzewodnikowych wiązką przyśpieszo nych elektronów polega na skróceniu czasu życia nośników mniejszo ściowych. Aby uzyskać odpowiednie warunki dla tego procesu, wyso koenergetyczne elektrony wytwarzają szereg defektów w kryształach krzemu. Istotną kwestią doboru parametrów procesu napromieniowa nia jest uzyskanie kompromisu pomiędzy zmniejszającym się czasu życia nośników, co prowadzi do polepszania zdolności przełączania, a jednoczesnym wzrostem napięcia przewodzenia, co ogranicza po ziom dopuszczalnego prądu obciążenia. Technika obróbki radiacyjnej w porównaniu do dyfuzyjnego wprowadzania domieszek metalicznych w półprzewodnikach oferuje: precyzję, niezawodność i powtarzalność wymaganych parametrów. Precyzyjna kontrola koncentracji genero wanych defektów zapewnia bardziej jednorodną charakterystykę elektryczną. Zastosowanie przyrządów półprzewodnikowych, takich jak diody Si i tranzystory MOSFET jest uznawane za jedną z innowa cyjnych metod, które można zastosować do pomiarów dozymetrycz nych wykonywanych w obszarze medycznym, a także w typowych systemach przemysłowych, gdzie dawka pochłonięta może waha się od 10 Gy do 50 kGy.

EN

Electron beam modification of semiconductor devices is based on the decrease of the lifetime of minority carriers after radiation treatment. To obtain suitable conditions for this process a number of defects are created in silicon crystals by high energy electrons. Certain irradiation conditions should be followed to obtain a com promise between decreasing carriers’ lifetime, which leads to the faster switching properties, but at the same time reduces load current level due to increase of the conduction voltage drop. The radiation processing technique, as compared to the introduction of metal impurities in semiconductors, offers: precision, reliabi lity and reproducibility of required properties. Precise control of the concentration of defects that are generated provides more uniform electrical characteristics. The irradiation process is very flexible and can be used for the processing of raw semiconductor components and for final products as well as for the improvement of the device properties. The use of semiconductor devices, like Si diodes and MOSFET transistors, are recognized as one of innova tive methods which can be used for dosimetry measurements as performed in the medical area, and also in typical industrial irra diators where the absorbed dose can range from 10 Gy to 50 kGy.

3

Przemysłowe akceleratory elektronów i ich zastosowania w technologiach radiacyjnych: zastosowanie technologii radiacyjnych do modyfikacji przyrządów półprzewodnikowych: informacje podstawowe

Bułka Sylwester

Elektronika : konstrukcje, technologie, zastosowania

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2023

|

Vol. 64, Nr 7

29--33

PL

Zasadniczą konsekwencją napromieniowania przyrządów elektronicznych są radiacyjnie indukowane zmiany własności materiałów, które mogą zakłócić funkcjonowanie przyrządów elektronicznych z nich wykonanych. Efekty te są powiązane zarówno z właściwościami napromieniowanego materiału, jak i rodzajem promieniowania. Można również wykorzystywać efekty wywołane promieniowaniem w przyrządach elektronicznych w produkcji, do zamierzonych modyfikacji materiałów półprzewodnikowych i właściwości produktu końcowego. Przyspieszone elektrony, wiązki jonów, promienie rentgenowskie, kosmiczne i gamma przenoszą swoją energię, wyrzucając elektrony z powłok atomów, które następnie mogą jonizować inne atomy w materiale pochłaniającym. Niektóre parametry elementów elektronicznych, takie jak: duża szybkość przełączania lub ujednolicony współczynnik wzmocnienia można osiągnąć poprzez selektywne zastosowanie obróbki radiacyjnej. Proces napromieniowania tworzy pierwotne i wtórne defekty w krysztale i generuje efektywne centra rekombinacji dla nośników mniejszościowych, toteż promieniowanie o wysokiej energii może być dobrze wykorzystane przy wytwarzaniu diod dużej mocy i tyrystorów o zadanych właściwościach czasu regeneracji.

EN

The principal consequence of irradiation on electronic devices is radiation-induced effects of materials, which can disturb the functioning of the electronic devices made from these materials. These effects are related both to the properties of the irradiated material and to the type of irradiation. Radiation-induced effects can also be used in the manufacture of electronic devices for intended modification of semiconductor material and the properties of the final product. Accelerated electrons, ion beams, X-rays, cosmic rays and gamma rays transfer their energy by ejecting atomic electrons, which can then ionize other atoms in absorbing material. Some parameters for electronic devices, such as high switching speed or unified gain coefficient can be achieved by selective use of radiation processing. The irradiation process forms the primary and secondary defects in the crystalline structure, and creates the effective recombination centers for minority carriers, hence high-energy radiation can be well used in the production of high-power diodes and thyristors with given properties of switching time.

4

Determination of the band structure diagram of semiconductor heterostructures applied in photovoltaics

Bogaczewicz Rafał Antoni, Popko Ewa, Gwóźdź Katarzyna Renata

Optica Applicata

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2021

|

Vol. 51, nr 1

135--145

EN

Recently it has been found that the heterostructures of n-ZnO/p-Si are promising photovoltaic alternatives to silicon homojunctions. It is well known that the energy band diagram of a heterostructure is crucial for the understanding of its operation. This paper analyzes the ZnO/p-Si heterostructure band by using free AMPS-1D computer program simulations. The obtained numerical results are compared with theoretical calculations based on the depletion region approximation model and the Poisson’s equation for electric potential. The results of the simulation are also compared with the experimental C-V characteristics of the test n-ZnO/p-Si heterostructure. The simulated C-V characteristics is qualitatively consistent with the experimental C-V curve, which confirms the correctness of the determined band diagram of the n-ZnO/p-Si heterostructure.

5

Modelling of changes in the resistivity of semi-insulating materials

Suproniuk Marek

Metrology and Measurement Systems

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2021

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Vol. 28, nr 3

581--592

EN

Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).

6

Comprehensive Analysis of Pre-Charge Sequence in Automotive Battery Systems

Ozguc Murat Kubilay, Ipek Eymen, Aras Kadir, Erhan Koray

Transactions on Environment and Electrical Engineering

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2020

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Vol. 4, No. 1

1--6

EN

Electric vehicles (EV) have brought promising technologies for future mobility solutions. As one of the key components of EVs, battery systems have fundamental functions which disconnect the battery during parking and in case of failure. To provide a safe system, specialized high voltage (HV) electromechanical switches are used to perform these major functions such as switch on, switch off or pre-charging. Due to these components can be easily damaged, expensive, heavy and bulky, a solution based on pure semiconductors may be desired to accomplish these operations. Many studies were exhibited on EV battery systems regarding developing solid-state systems for HV switchgear. Developing technology on semiconductor devices allows to make a safety concept based on only solid-state components. This study presents a comprehensive analysis of pre-charge sequences between conventional and semiconductor switchgear to be used in electric vehicle battery systems. Spice simulations are presented to investigate advantages and drawbacks of these systems.

7

Bezpieczniki szybkie do ochrony komponentów półprzewodnikowych

Piętka Rafał

Napędy i Sterowanie

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2020

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R. 22, nr 1

8--10

PL

Wraz z gwałtownym rozwojem energoelektroniki, zapoczątkowanym w latach 50. ubiegłego wieku, nastąpił rozwój różnych odmian półprzewodnikowych przyrządów mocy. Elementy te (np. diody, tyrystory, tranzystory mocy) cechują się słabymi parametrami przeciążeniowymi, dlatego wymagają bardzo wrażliwej i szybko działającej ochrony. Błędy skutkujące zwarciami w urządzeniach energoelektronicznych mogą spowodować niemałe uszkodzenia zarówno samego urządzenia, jak i jego otoczenia z uwagi na ryzyko eksplozji. Optymalnym rozwiązaniem w tym przypadku stają się bezpieczniki szybkie, specyficznie zaprojektowane z myślą o ochronie półprzewodnikowych elementów mocy. Celem niniejszego artykułu jest przedstawienie podstawowych pojęć, parametrów i funkcji tych bezpieczników.

8

Synthesis and characterization of poly(p-phenylenediamine): TiO2 nanocomposites and investigation of conducting properties for optoelectronic application

Baruah S., Devi N., Puzari A.

Materials Science Poland

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2020

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Vol. 38, No. 2

296--304

EN

Poly(p-phenylenediamine) is a potential precursor for designing of new materials for optoelectronic application. Synthesis and characterization of poly(p-phenylenediamine) – TiO2 nanocomposites has been demonstrated. Structural change observed due to the formation of nanocomposites was correlated with concomitant change in conducting behavior of the parent polymer. Polymer nanocomposite was synthesized through an in-situ oxidative polymerization technique with simultaneous dispersion of TiO2 nanoparticles. TiO2 nanoparticles were synthesized via sol-gel process. Structural characterization was accomplished by using conventional spectroscopic and imaging techniques. I-V measurement of the nanocomposites revealed that the nearly nonconducting poly(p-phenylenediamine) after structural modification exhibits conductivity of 10-6 S/cm leading to formation of wide band gap semiconducting materials.

9

Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film

Mantarci Asim, Kundakçi Mutlu

Materials Science Poland

|

2019

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Vol. 37, No. 3

454--464

EN

GaN thin films were deposited on p-Si(1 0 0) substrates using RF magnetron sputtering at various RF powers. Influence of RF power on morphological, optical and structural properties of GaN thin films were investigated and presented in detail. XRD results proved that the films were polycrystalline in structure with (1 0 0) and (1 1 0) planes of hexagonal GaN. It was found that increasing RF power led to deterioration of crystal structure of the films due to increased decomposition of GaN. Stress in GaN thin films was calculated from XRD measurements and the reasons for this stress were discussed. Furthermore, it was analyzed and interpreted whether the experimental measurement results support each other. E2 (high) optical phonon mode of hexagonal GaN was obtained from the analysis of Raman results. UV-Vis spectroscopy results showed that optical band gap of the films varied by changing RF power. The reasons of this variation were discussed. AFM study of the surfaces of the GaN thin films showed that some of them were grown in Stranski-Krastanov mode and others were grown in Frank-Van der Merwe mode. AFM measurements revealed almost homogeneous, nanostructured, low-roughness surface of the GaN thin films. SEM analysis evidenced agglomerations in some regions of surface of the films and their possible causes have been discussed. It has been inferred that morphological, optical, structural properties of GaN thin film can be changed by controlling RF power, making them a potential candidate for LED, solar cell, diode applications.

10

Current state of photoconductive semiconductor switch engineering

Majda-Zdancewicz E., Suproniuk M., Pawłowski M., Wierzbowski M.

Opto-Electronics Review

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2018

|

Vol. 26, No. 2

92--102

EN

This paper presents the current state of a photoconductive semiconductor switch engineering. A photoconductive semiconductor switch is an electric switch with its principle of operation based on the phenomenon of photoconductivity. The wide application range, in both low and high-power devices or instruments, makes it necessary to take design requirements into account. This paper presents selected problems in the scope of designing photoconductive switches, taking into account, i.e. issues associated with the element trigger speed, uniform distribution of current density, thermal resistance, operational lifespan, and a high, local electric ﬁeld generated at the location of electrodes. A review of semiconductor materials used to construct devices of this type was also presented.

11

Facile microwave-assisted synthesis of Al:Mn co-doped PbI2 nanosheets: structural, vibrational, morphological, dielectric and radiation activity studies

Yahia I. S., Shkir M., Ganesh V., Abutalib M. M., Zahran H. Y., Alfaify S.

Materials Science Poland

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2018

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Vol. 36, No. 2

320--326

EN

Herein, we report a successful development of nano-scale pure and Al and Mn co-doped PbI2 using facile microwave-assisted route. Structural study was done through X-ray diffraction analysis of grain size, dislocation density and lattice strain. The crystallite size was found to vary from 28 nm to 40 nm due to Al:Mn co-doping in PbI2. The presence of various vibrational modes was confirmed by FT-IR spectroscopy and red shifting was observed in peak positions compared to the bulk. Surface morphology, examined using a scanning electron microscope, confirmed the formation of single crystal nanosheets of a thickness in the range of 10 nm to 30 nm. The single crystal nanosheets were found to be transformed to large area nanosheets due to the doping. Enhancement in dielectric constant from ~7.5 to 11 was observed with increasing Al doping concentration. Linear attenuation coefficient was calculated and showed the enhancement of blocking gamma rays with increasing doping concentration. Its value was found to increase from 7.5 to 12.8 with the doping. The results suggest that the synthesized nanostructures can be used for detection and absorption of gamma rays emitted by 137Cs and 241Am sources.

12

Wpływ napięcia zasilania tranzystora IGBT na otrzymany sygnał emisji akustycznej

Dreas A., Gordon R.

Badania Nieniszczące i Diagnostyka

|

2018

|

nr 4

62--64

PL

W niniejszym artykule przedstawiono serię pomiarów i poszukiwanie metody wykrywania uszkodzeń za pomocą przetwarzania sygnałów emisji akustycznej. Sygnał z czujnika obserwowano i przetwarzano za pomocą oscyloskopu i poddano obróbce cyfrowej. Celem była obserwacja wyjściowego sygnału przy zmianie napięcia zasilania, aby oszacować jego wpływ na sygnał z czujnika.

EN

This paper shows series of measurements and a search for method of signal processing. Sensor signal was obtained with oscilloscope in order to further process it digitally. The change of power supply voltage was also measured to estimated its influence on sensor signal.

13

Nadprzewodnictwo w półprzewodnikach

Sosnowski J.

Przegląd Techniczny : Gazeta Inżynierska

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2017

|

nr 7-8

18--22

PL

W pracy omówiono odkrycia z zakresu występowania nadprzewodnictwa w półprzewodnikach. Materiały te łącząc specyficzne właściwości tych dwóch klas – nadprzewodników i półprzewodników – stwarzają nowe możliwości ich zastosowania, w tym przy konstrukcji przyrządów elektronicznych. Przedstawiono pierwsze, wcześniejsze rezultaty badań półprzewodników nadprzewodzących, w tym przeprowadzone przez autora na selenku lantanu oraz wyniki nowych badań prowadzących do odkrycia nadprzewodników żelazowych, które także oparte są na lantanie i selenie.

EN

In the paper are discussed discoveries from range of occurrence superconductivity in semiconductors. These materials connecting peculiar specificities in these two classes – superconductors and semiconductors bring new capabilities of their applications at construction of electronic instruments. In paper are presented first, earlier results of research of superconducting semiconductors, including carried by author of publication on lanthanum selenide and then results of new research leading to discovery of iron-superconductors, which are also based on lanthanum and selenide.

14

Wybrane aspekty projektowania przełączników fotokonduktancyjnych

Suproniuk M., Majda-Zdancewicz E., Pawłowski M., Wierzbowski M.

Przegląd Elektrotechniczny

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2017

|

R. 93, nr 10

103--106

PL

Półprzewodnikowy przełącznik fotokonduktancyjny to urządzenie, w którym w wyniku pobudzenia sygnałem optycznym, następuje wzrost koncentracji nośników ładunku powodując zmniejszenie oporności materiału półprzewodnikowego nawet o kilka rzędów wielkości. W artykule przedstawiono wybrane aspekty projektowania przełączników fotokonduktancyjnych uwzględniając m.in. kwestie związane z szybkością włączania elementu, równomiernym rozkładem gęstości prądu, wytrzymałością termiczną, czasem eksploatacji i wysokim lokalnym polem elektrycznym wytwarzanym w miejscu elektrod.

EN

A photoconductive semiconductor switch is a device in which density of charge carriers increases causes decreases resistivity of semiconductor as a result of optically triggered. This paper shows selected aspects of photoconductive semiconductor switches designing with regards issue related to the switch rise-times, uniform distributed current density, thermal resistance, device lifetime and high local electric field generated at the electrode site.

15

Preludium do wysokonapięciowych półprzewodników z szerokim pasmem zabronionym. Tranzystory IGBT nowej generacji – niskie poziomy indukcyjności, małe straty i miękkie przełączanie

White C.

Napędy i Sterowanie

|

2017

|

R. 19, nr 1

32--35

PL

HITACHI, dostrzegając aktualne potrzeby rynku, wprowadza tranzystory IGBT nowej generacji w obudowie nHPD2 o niższych stratach mocy, niższej indukcyjności oraz wartościach EMI, torując jednocześnie drogę dla technologii półprzewodników WBG.

16

Model matematyczny zjawisk zachodzących w ogniwie Peltiera

Pniewski P., Kowalik R., Sadowski E.

Autobusy : technika, eksploatacja, systemy transportowe

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2017

|

R. 18, nr 12

1237--1240, CD

PL

W artykule omówiono model matematyczny zjawisk fizycznych opisujących działanie elementu termoelektrycznego jakim jest ogniwo Peltiera. W uproszczeniu omawiany element funkcjonuje jako mała „pompa powietrza” zimnego lub ciepłego. Proces wymiany temperatury między poszczególnymi elementami ogniwa realizowany jest w sposób ciągły tzn. powierzchnia jednego półprzewodnika umieszczonego w module jest chłodzona, druga zaś ogrzewana. Cykl ten realizowany jest jednocześnie na obu elementach półprzewodnikowych. Biorąc pod uwagę, że materiał z którego wykonano element półprzewodnikowy zależny jest od temperatury środowiska w jakim pracuje, stąd w procesie modelowania fizycznego zwrócono szczególną uwagę na poszczególne etapy zmiany temperatury ze stanu zimnego w gorący. Podstawowe zjawiska fizyczne zachodzące w module Peltiera są ściśle powiązane z temperaturą, tak więc parametry użytkowe elementu zależne są od warunków pracy. Proces ten odwzorowano w modelowaniu komputerowym w specjalnie stworzonym do tego celu oprogramowaniu inżynieryjnym, w którym to zweryfikowano zależności matematyczne określające wydajność ogniwa Peltiera. Wyniki zaprezentowane w niniejszym artykule zostały wyznaczone dla pracy ogniwa w temperaturze powietrza mieszczącego się w przedziale (-20°C – +35°C).

EN

The article discusses the mathematical model of physical phenomena describing the operation of the thermoelectric element which is Peltier module. Simply discussed element functions as a small cold or warm "air pump". The process of the temperature exchange between different parts of the cell is executed continuously and it means that the surface of a semiconductor placed in the module is cooled and the other side is heated. This cycle is carried out simultaneously on both side of the semiconductor. The material from which the semiconductor element depends on the temperature of the environment where is place, there was highlighted various stages of temperature changes from cold to hot during the physical modeling. Bearing in mind that the basic physical phenomena occurring in the Peltier module are closely connected to the temperature, the operating parameters element depends on operating conditions. This process is mapped in computer modeling in a specially designed for this purpose engineering software where it was verified mathematical relations which determines the performance of Peltier modules. The presented results in this article are set for the module's operation temperature of air located in the range of between -20°C and + 35°C.

17

Fabrication of dye sensitized solar cell using chemically tuned CuO nanoparticles prepared by sol-gel method

Prabhin V. S., Jeyasubramanian K., Romulus N. R., Singh N. N.

Archives of Materials Science and Engineering

|

2017

|

Vol. 83, nr 1

5--9

EN

This work details about the isolation of CuO nanoflakes by a simple precipitation technique. Further it is coated over ITO substrate using spin coating technique. DSS cell capabilities were checked by placing a drop of plant dye derived from pomegranate. Design/methodology/approach: CuO nano flakes, a novel Nano sized metal oxide have been synthesized by sol-gel method. The synthesised flakes were characterized by using XRD (X-ray diffraction), FESEM, UV-VIS and PL measurements techniques. XRD studies show that, the copper oxide formed has monoclinic structure. Findings: The grain size of the synthesized copper oxide nanoflakes were measured from FESEM and found that the size was around 200 nm. The UV-VIS measurement show that the band gap of CuO nanoflakes were found to be 3.03 eV, which is in the range of a good semiconductor. Finally, the dye sensitized solar cell was fabricated and its power conversion efficiency η (PCE) was determined. Practical implications: The search for green sources or generators of energy is considered as one of the priorities in today's society and occupies many policy maker’s agenda. It is believed that nanocrystalline photovoltaic devices are becoming viable contender for large scale future solar energy converters.

18

Synthesis and characterization of CdS nanorods by combined sonochemical-solvothermal method

Bozkurt P. A., Derkuş B.

Materials Science Poland

|

2016

|

Vol. 34, No. 3

684--690

EN

Cadmium sulfide (CdS) nanorods with a diameter of 50 nm and length of approximately 200 nm have been synthesized using combined sonochemical-solvothermal method. Structural properties of CdS nanoparticles synthesized by this method have been compared with the CdS nanoparticles synthesized by sonochemical method alone. The synthesized CdS nanostructures have been characterized using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX) and transmission electron microscopy (TEM) methods. In addition, the factors affecting the formation of the structures, including reaction time, different type and ratio of precursors, such as sulphur source, have been investigated. Comparison of the results obtained by both the synthesis methods revealed CdS nanoparticles synthesized by the combined sonochemical-solvothermal method to be of high morphological homogeneity compared to the sonochemical method alone. It is interesting to note that ethylenediamine has been found to be prevented from agglomeration by using the combined sonochemical-solvothermal method as the synthesis method. A modified growth mechanism under the inducement of ethylenediamine solutions for the CdS nanorods has been suggested.

19

Numerical simulations of epitaxial growth in MOVPE reactor as a tool for aluminum nitride growth optimization

Skibinski J, Caban P., Wejrzanowski T., Grybczuk M., Kurzydlowski K. J.

Journal of Power Technologies

|

2016

|

Vol. 96, nr 2

110--114

EN

The present study concerns numerical simulations and experimental measurements on the influence of inlet gas mass flow rate on the growth rate of aluminum nitride crystals in Metalorganic Vapor Phase Epitaxy reactor model AIX-200/4RF-S. The aim of this study was to design the optimal process conditions for obtaining the most homogeneous product. Since there are many agents influencing reactions relating to crystal growth such as temperature, pressure, gas composition and reactor geometry, it is difficult to design an optimal process. Variations of process pressure and hydrogen mass flow rates have been considered. Since it is impossible to experimentally determine the exact distribution of heat and mass transfer inside the reactor during crystal growth, detailed 3D modeling has been used to gain insight into the process conditions. Numerical simulations increase the understanding of the epitaxial process by calculating heat and mass transfer distribution during the growth of aluminum nitride crystals. Including chemical reactions in the numerical model enables the growth rate of the substrate to be calculated. The present approach has been applied to optimize homogeneity of AlN film thickness and its growth rate.

20

Optical investigations of ZnO layers affected by some selected gases in the aspect of their application in optical gas sensors

Struk P., Pustelny T., Gołaszewska K., Borysiewicz M. A., Piotrowska A.

Bulletin of the Polish Academy of Sciences. Technical Sciences

|

2015

|

Vol. 63, nr 4

829--836

EN

The paper presents the results of investigations of zinc oxide (ZnO) layers as a potential sensing material, being affected by certain selected gaseous environments. The investigations concerned the optical transmission through thin ZnO layers in wide spectral ranges from ultraviolet to the near infrared. The effect of the gaseous environment on the optical properties of zinc oxide layers with a thickness of ~ 400 nm was analyzed applying various technologies of ZnO manufacturing. Three kinds of ZnO layers were exposed to the effect of the gaseous environment, viz.: layers with relatively slight roughness (RMS several nm), layers with a considerable surface roughness (RMS some score of nm) and layers characterized by porous ZnO structures. The investigations concerned spectral changes in the transmission properties of the ZnO layers due to the effect of such gases as: ammonia (NH3), hydrogen (H2), and nitrogen dioxide (NO2) in the atmosphere of synthetic air. The obtained results indicated the possibility of applying porous ZnO layered structures in optical gas sensors.