Wyniki wyszukiwania - BazTech

Ograniczanie wyników

2 Materials Science Poland

Znaleziono wyników: 2

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: ferromagnetic transition

Sortuj według:

Ogranicz wyniki do:

Ferromagnetic and structural properties of Ge1-xMnxTe epitaxial layers

Knoff W, Dziawa P, Osinniy V, Taliashvili B, Domuchowski W, Diduszko R, Domagała J, Łusakowska E, Jakieła R, Story T

Materials Science Poland

2008

Vol. 26, No. 4

295--300

Magnetic properties of thin layers of p-Ge1–xMnxTe (x < 0.2) semimagnetic (diluted magnetic) semiconductor exhibiting carrier induced ferromagnetism were experimentally studied. The layers were grown on BaF2 (111) substrates by molecular beam epitaxy technique. X-ray diffraction analysis performed at room temperature revealed monocrystalline (111)-oriented rhombohedral (exhibiting ferroelectric properties) crystal structure of Ge1–xMnxTe layers in the entire range of Mn content studied. The examination of the magnetic properties of the layers carried out by superconducting SQUID magnetometry and ferromagnetic resonance technique showed the ferromagnetic transition with the Curie temperature in the range 10–100 K depending on the Mn content and the hole concentration. Contrary to polycrystalline GeMnTe layers, it was experimentally found that in monocrystalline layers of GeMnTe an easy magnetization axis is directed along a normal to the layer plane. This effect is discussed in terms of strain present in these layers due to thermal expansion coefficients mismatch between the substrate and the GeMnTe layer.

Ferromagnetic transition in Ge1-xMnxTe semiconductor layers

Knoff W., Dziawa P., Osinniy V., Taliashvili B., Domuchowski V., Łusakowska E., Świątek K., Story T.

Materials Science Poland

2007

Vol. 25, No. 2

293--300

Magnetic properties of thin layers of p-Ge1-xMnxTe (x < 0.2) semimagnetic (diluted magnetic) semiconductor exhibiting carrier induced ferromagnetism were experimentally studied. The layers were grown on BaF2 (111) substrates by molecular beam epitaxy technique. X-ray diffraction analysis performed at room temperature revealed monocrystalline (111)-oriented rhombohedral (exhibiting ferroelectric properties) crystal structure of Ge1-xMnxTe layers in the entire range of Mn content studied. The examination of the magnetic properties of the layers carried out by superconducting SQUID magnetometry and ferromagnetic resonance technique showed the ferromagnetic transition with the Curie temperature in the range 10-100 K depending on the Mn content and the hole concentration. Contrary to polycrystalline GeMnTe layers, it was experimentally found that in monocrystalline layers of GeMnTe an easy magnetization axis is directed along a normal to the layer plane. This effect is discussed in terms of strain present in these layers due to thermal expansion coefficients mismatch between the substrate and the GeMnTe layer.