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1

Band Notch Characteristics Reconfigurable UWB Leaf Shape Monopole Antenna

Muthusamy Pachiyaannan, Nallapaneni Srikanta, Perumalla Krishna Chaitanya, Punna Bharghava

International Journal of Electronics and Telecommunications

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2022

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Vol. 68, No. 2

223--228

EN

In this paper a band notch characteristics reconfigurable UWB leaf shape monopole antenna is reported. The proposed antenna size is 42×32×1.6 mm³ and simulated S11-10dB impedance bandwidth is from 2.1 to 13.0 GHz. The notch bands are embodied into the designed antenna to suppress Bluetooth and WiFi bands from 2.3-2.7 GHz and 4.6-5.3 GHz. The PIN Diode is loaded to slot on the DGS to achieve notch bands. It has 4.48dB and 1.7dB gain achieved when diode ON and OFF condition. Further, it encompasses a bio-inspired leaf shape patch having high feasibility for deployment in secret and military purposes.

2

Frequency Reconfigurable Split Ring Antenna for LTE And WiMAX Applications

Madhav B. T. P., Nadh B., Anilkumar T., Pardhasaradhi P., Rao M. C., Lakshman P.

International Journal of Electronics and Telecommunications

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2020

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Vol. 66, No. 2

255--260

EN

This paper presents frequency reconfigurable dual band antenna for WiMAX and LTE 2500 band applications using four PIN diode switches. The antenna is compact in size with dimensions of 30 x 30 x 0.8 mm3 and designed on FR-4 dielectric substrate with a partial ground plane. The fabricated antenna operates in the frequency range of LTE and WiMAX (2.5-2.69 GHz and 3.4-3.6 GHz) respectively. The frequencies can be controlled by using PIN diodes and antenna attained the gain ranging of 3.34-4.46 dBi. This designed antenna resonating at 2.52 and 3.49 GHz when the PIN diodes are in ON state and resonating at 2.68 and 3.58 GHz when PIN diodes are in OFF state. The proposed antenna has bidirectional radiation at upper frequency bands and unidirectional at lower frequency bands. The proposed split ring structured antenna has the radiation efficiency of 94.12% at 2.52 GHz and 90.34% at 3.49 GHz in ON state. Antenna providing good agreement between the measured (Antenna measurement setup with VNA) and simulated results (Ansys-HFSS).

3

Simulation and characterization of 4H-SiC JBS diodes irradiated by hydrogen and carbon ions

Sharma R. K., Hazdra P, Popelka S.

International Journal of Microelectronics and Computer Science

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2015

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Vol. 6, nr 2

59--63

EN

This paper presents the development and application of simulation models for proton and carbon irradiated 4H-SiC junction barrier Schottky (JBS) diodes. Commercial JBS diode chips were irradiated to the identical depth with different doses of hydrogen and carbon ions. The resulting defects were then identified by deep level transient spectroscopy (DLTS). Comprehensive I-V and C-V measurement performed prior to and after ion irradiation was used for calibration of simulation models. Results show that compared to protons, heavier carbon ions introduce more defects with deeper levels in the SiC bandgap and more stable damage. For the first time, the free carrier concentration profile extracted from CV simulations for irradiated JBS diode has been compared with experimental data. The simulation of irradiated JBS diodes exhibit excellent matching with experimental data and can be very useful for the optimization of SiC power devices. Furthermore, it is shown that the developed model can be used for prediction of the effect of ion irradiation on both the static and dynamic characteristic of PiN diode.

4

Problematyka modelowania w programie SPICE charakterystyk stałoprądowych elektroizolowanych diodowych modułów mocy zawierających diody typu PiN oraz diody typu FRED

Dąbrowski J., Zarębski J.

Elektronika : konstrukcje, technologie, zastosowania

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2012

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Vol. 53, nr 1

103-106

PL

W artykule poruszono problematykę modelowania w programie SPICE charakterystyk statycznych krzemowych elektroizolowanych diodowych modułów mocy. Do badań wybrano moduły zawierające diody typu PiN oraz diody typu FRED.

EN

In the paper the problem of modeling of d.c. characteristics of electroisolated power diode modules was considered. For investigations the modules containing the silicon PiM diodes and the silicon fast recovery epitaxial diodes were chosen.

5

Pasywny ogranicznik diodowy na pasmo Ku

Gryglewski D., Wojtasiak W.

Elektronika : konstrukcje, technologie, zastosowania

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2012

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Vol. 53, nr 10

48-51

PL

Celem komunikatu jest prezentacja konstrukcji pasywnego ogranicznika diodowego przeznaczonego do ochrony toru odbiorczego radaru RSKu-10 na pasmo 17...17.5 GHz. Na podstawie analizy różnych rozwiązań układowych i konstrukcyjnych diodowych układów ograniczających opracowano strukturę i technologię ogranicznika na pasmo Ku z krzemowymi diodami ograniczającymi PIN w formie chipów o typowej wartości pojemności zlącza 0,2 pF i rezystancji szeregowej 2..,3 Ω. Układ z pojedynczą diodą tłumi sygnał poniżej progu ograniczania (Pwe1dB - 7 dBm) mniej niż 0.4 dB, przy stratach odbicia na poziomie -20 dB w żądanym zakresie częstotliwości 17...17,5 GHz W przedziale ograniczania osiągnięto parametry zgodne z danymi producenta diody.

EN

The paper presents design of PIN diode passive limiter for Ku-band RSKu-10 radar. The typical silicone limiter PIN diode with typical 0.2 pF junction capacitance has been chosen. To fulfill requirements the new concept of diode assembly in microstrip line is developed. The limiter was designed with the aid of ADS simulator and manufactured on substrate RT/DURO-ID5880 (Er- 2.22, h - 0.254 mm). The measured insertion loss and return loss of limiter over a 17÷17.5 GHz frequency range are lower than 0.5 dB and -20 dB, respectively During limiting operation the 10 dBm threshold level and 22dBm leakage level was achieved. The device is a part of the full version of Ku-band limiter for radar.

6

Charakteryzacja diod p-i-n wytworzonych metodą implantacji warstw epitaksialnych 4H-SiC jonami glinu

Kwietniewski N., Pazio K., Sochacki M., Szmidt J., Droździel A., Kulik M., Prucnal S., Pyszniak K., Rawski M., Turek M., Żuk J.

Elektronika : konstrukcje, technologie, zastosowania

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2009

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Vol. 50, nr 6

32-35

PL

W pracy opisano wytwarzanie i charakteryzację diod p-i-n wytwarzanych w strukturach epitaksjalnych 4H-SiC. W celu uzyskania warstw typu p⁺ wykonano 4-krotną implantację jonami Al przy całkowitej dawce 7,1 · 10¹⁴ cm⁻2² dla uzyskania prostokątnego rozkładu głębokościowego. Implantację prowadzono przy temperaturze tarczy 500°C z użyciem implanatora jonów UNIMAS wyposażonego w plazmowe źródło jonów naszej konstrukcji. Zaimplantowany materiał został następnie wygrzany w argonie przez 20 min. w t = 1600°C. Przeprowadzono badania rozkładów głębokościowych SIMS oraz rozpraszania mikro-ramanowskiego. Z pomiarów metodą c-TLM wyznaczono wartości rezystancji charakterystycznej kontaktów. Pomiary Halla wykazały, że koncentracja nośników w warstwie implantowanej p⁺ o grubości 350 nm zawiera się w przedziale 3...4 · 10¹⁸ cm⁻³ Gęstość prądu wytworzonych diod osiąga maksymalną wartość 220 A/cm² przy polaryzacji w kierunku przewodzenia 10 V, natomiast napięcie przebicia zawiera się w granicach 550...600 V.

EN

We report on fabrication and characterization of 4H-SiC p-i-n diodes. In order to obtain p⁺ -type layer, a four energy Al box-like profile was implanted with atotal fluence of 7,1 • 10 ¹¹ cm ⁻² at 500°C, using the UNIMAS ion implanter equipped with a plasma ion source of our construction. Implanted material was subsequently annealed for 20 min at 1600°C in argon. SIMS depth profiling and micro-Raman scattering investigations we re performed. The values of specific contact resistance were determined by the c-TLM method. The performed Hall measurements have shown that 350 nm thick p⁺ layers are characterized by carrier concentration of 3...4 • 10 ¹⁸ cm ⁻³. The fabricated diodes have probed forward current density up to 220 A/cm² at 10 V forward drop and 550...600 V breakdown voltages.

7

Nowe krzemowe detektory promieniowania : opracowania Instytutu Technologii Elektronowej

Węgrzecki M., Bar J., Węgrzecka I., Słysz W., Grodecki R., Grabiec P., Krzemiński S., Budzyński T., Zaborowski M., Panas A., Cież M., Kulawik J., Gröger B.

Elektronika : konstrukcje, technologie, zastosowania

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2006

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Vol. 47, nr 12

40-43

PL

Omówiono nowe opracowania ITE w dziedzinie krzemowych detektorów promieniowania. W szczególności opisano unikalne detektory cząstek a, w tym 64-elementowe matryce chromatograficzne do rejestracji pojedynczych atomów pierwiastków z grupy transuranowców, opracowane we współpracy z Institut fur Radiochemie - Technische Universitat Munchen oraz dwuelementowy otwarty detektor cząstek a, opracowany we współpracy z Paul Scherrer Institut (PSI) - Villingen, Szwajcaria, do budowanego w PSI detektora COLD (Cryo-On-Une-Detector).

EN

New devices developed at the ITE in the field of silicon detectors of radiation are presented in the article. In particular, unique detectors of a particles - including 64-element, chromatographic arrays used for recording the single atoms of transuranic elements - developed in cooperation with Institut fur Radiochemie - Technische Universitat Munchen, are described, as well as a 2-element, open detector of a particles, developed in cooperation with Paul Scherrer Institut (PSI) - Villingen, Switzerland, used in the COLD detector (Cryo-On-Line-Detector) developed at PSI.

8

Optical beam injection methods as a tool for analysis of semiconductor structures

Domaradzki J., Kaczmarek D.

Optica Applicata

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2005

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Vol. 35, nr 1

129-137

EN

Optical beam injection methods, such as an optical beam induced current (OBIC) one, have several advantages. Such methods enable a comprehesive analysis of photocuurent generated at the microregion of a semiconductor material or a device by focused light beam. In the paper, examples of applications of the OBIC method for: i) examination of the silicon p-i-n diodes used in a scanning electron microscope (SEM) as a detector and ii) localization of electrically active regions at the interface of the new transparent oxide semiconductor (TOS)-semiconductor structure have been outlined.

9

New approach to power semiconductor devices modeling

Napieralski A., Napieralska M.

Journal of Telecommunications and Information Technology

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2004

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nr 1

80-89

EN

The main problems occurring during high power device modeling are discussed in this paper. Unipolar and bipolar device properties are compared and the problems concerning high time-constant values related to the diffusion phenomena in the large base are explained. Traditional and novel concepts of power device simulation are presented. In order to make accurate and modern semiconductor device models widely accessible, a website has been designed and made available to Internet users, allowing them to perform simulations of electronic circuits containing high power semiconductor devices. In this software, a new distributed model of power diode has been included. Together with the existing VDMOS macromodel library, the presented approach can facilitate the design process of power circuits. In the future, distributed models of IGBT, BJT and thyristor will be added.