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Electrical and structural properties of HgCdTe/Si films obtained by the laser epitaxy

Plyatsko S. V., Vergush M. M., Plyatsko S. K., Piotrowski T.

Electron Technology

2000

Vol. 33, No. 4

548-552

In this paper Investigations of HgCdTe layers are presented. The layers have been grown on silicon substrate by evaportation technique using a modulated infrared, large power laser beam. The investigated parametaers included resistivity, the Hall coefficient and mobility of n-type layers obtained by means of evaportation of a solid source or power tablet. The results of characterization using Auger spectroscopy are also shown together with AFM results.