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Optimised magnetron sputtering method for the deposition of indium tin oxide layers

Musztyfaga-Staszuk Małgorzata, Pudiš Dušan, Socha Robert, Gawlińska-Nęcek Katarzyna, Panek Piotr

Bulletin of the Polish Academy of Sciences. Technical Sciences

2021

Vol. 69, nr 6

art. no. e139005

The article presents the method of magnetron sputtering for the deposition of conductive emitter coatings in semiconductor structures. The layers were applied to a silicon substrate. For optical investigations, borosilicate glasses were used. The obtained layers were subjected to both optical and electrical characterisation, as well as structural investigations. The layers on silicon substrates were tested with the four-point probe to find the dependence of resistivity on the layer thickness. The analysis of the elemental composition of the layer was conducted using a scanning electron microscope equipped with an EDS system. The morphology of the layers was examined with the atomic force microscope (AFM) of the scanning electron microscope (SEM) and the structures with the use of X-ray diffraction (XRD). The thickness of the manufactured layers was estimated by ellipsometry. The composition was controlled by selecting the target and the conditions of the application, i.e. the composition of the plasma atmosphere and the power of the magnetrons. Based on the obtained results, this article aims to investigate the influence of the manufacturing method and the selected process parameter on the optical properties of thin films, which should be characterised by the highest possible value of the transmission coefficient (>85–90%) and high electrical conductivity.

A solution-processable small-organic molecules containing carbazole or phenoxazine structure as hole-transport materials for perovskite solar cells

Gawlińska-Nęcek Katarzyna, Starowicz Zbigniew, Tavgeniene Daiva, Krucaite Gintare, Grigalevicius Saulius, Schab-Balcerzak Ewa, Lipiński Marek

Opto-Electronics Review

2019

Vol. 27, No. 2

137--142

Three low molecular weight compounds bearing carbazole units (1,6-di{3-[2-(4-methylphenyl)vinyl]carbazol-9-yl}hexane and 9,9'-di{6-[3-(2-(4-methylphenyl)vinyl)-9-carbazol-9-yl]hexyl}-[3,3']bicarbazole) and phenoxazine structure (10-butyl-3,7-diphenylphenoxazine) were tested as hole-transporting materials in perovskite solar cells. Two of them were successfully applied as hole transporting layers in electroluminescent light emitted diodes. The examined compounds were high-thermally stable with decomposition temperature found at the range of 280–419 °C. Additionally, DSC measurement revealed that they can be converted into amorphous materials. The compounds possess adequate ionization potentials, to perovskite energy levels, being in the range of 5.15–5.36 eV. The significant increase in power conversion efficiency from 1.60% in the case of a device without hole-transporting layer, to 5.31% for device with 1,6-di{3-[2-(4-methylphenyl)vinyl]carbazol-9- yl}hexane was observed.