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Influence of gas adsorption on photoluminescence properties of porous silicon layers

Łukasiak Z., Wyrzykowski Z., Sylwisty J., Bała W.

Electron Technology

2000

Vol. 33, No. 1/2

207-209

Influence of different vapours (methanol CH₃OH, isopropanol C₃H₈O, toluene C₆H₅CH₃) on photoluminescence spectra of anodically etched porous silicon measured at room temperature under pulse exciation are presented. Weak changes of the global photoluminescence intensity, distinct changes of spectrum structure and its full recovery after exposure samples to vacuum are observed. To explain our results we assumed, that adsorbed molecules modify propability of nonradiative recombination of the excited carriers on traps located on the surface of silicon crystallites. Presented results and conclussions support quantum confinement as a mechanism of the luminescence of porous silicon.