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MBE-grown MCT hetero- and nanostructures for IR and THz detectors

Dvoretsky S. A., Mikhailov N. N., Remesnik V. G., Sidorov Y. G., Shvets V. A., Ikusov D. G., Varavin V. S., Yakushev M. V., Gumenjuk-Sichevska J. V., Golenkov A. G., Lysiuk I. O., Tsybrii Z. F., Shevchik-Shekera A. V., Sizov F. F., Latyshev A. V., Aseev A. L.

Opto-Electronics Review

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2019

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Vol. 27, No. 3

282--290

EN

We present an overview of our technological achievements in the implementation of detector structures based on mercury cadmium telluride (MCT) heterostructures and nanostructures for IR and THz spectral ranges. We use a special MBE design set for the epitaxial layer growth on (013) GaAs substrates with ZnTe and CdTe buffer layers up to 3” in diameter with the precise ellipsometric monitoring in situ. The growth of MCT alloy heterostructures with the optimal composition distribution throughout the thickness allows the realization of different types of many-layered heterostructures and quantum wells to prepare the material for fabricating single- or dual-band IR and THz detectors. We also present the two-color broad-band bolometric detectors based on the epitaxial MCT layers that are sensitive in 150–300-GHz subterahertz and infrared ranges from 3 to 10μm, which operate at the ambient or liquid nitrogen temperatures as photoconductors, as well as the detectors based on planar HgTe quantum wells. The design and dimensions of THz detector antennas are optimized for reasonable detector sensitivity values. A special diffraction limited optical system for the detector testing was designed and manufactured. We represent here the THz images of objects hidden behind a plasterboard or foam plastic packaging, obtained at the radiation frequencies of 70, 140, and 275 GHz, respectively.

2

Linear HgCdTe IR FPA 288 × 4 with bidirectional scanning

Vasilyev V. V., Predein A. V., Varavin V. S., Mikhailov N. N., Dvoretsky S. A., Gumenjuk-Sichevska J. V., Golenkov A. G., Reva V. P., Sabinina I. V., Sidirov Y. V., Susliakov A. O., Sizov F. F., Aseev A. L.

Opto-Electronics Review

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2010

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Vol. 18, No. 3

332-337

EN

The long wavelength (8-12 μm) IR FPA 288×4 based on a hybrid assembly of n+-p diode photosensitive arrays (PA) of HgCdTe (MCT) MBE-grown structures and time delay integration (TDI) readout integrated circuits (ROIC) with bidirectional scanning have been developed, fabricated, and investigated. The p-type MCT structures were obtained by thermal annealing of as-grown n-type material in inert atmosphere. The MCT photosensitive layer with the composition 0.20-0.23 of mole fraction of CdTe was surrounded by the wide gap layers to decrease the recombination rate and surface leakage current. The diode arrays were fabricated by planar implantation of boron ions into p-MCT. The typical dark currents were about 4-7 nA at the reverse bias voltage of 150 mV. The differential resistance R was up to R₀ = 1.6×10⁷ Ω zero bias voltage, which corresponded to R₀A ∼70 Ω •cm² and to the maximal value Rmax = 2.1 × 10⁸ Ω. The bidirectional TDI deselecting ROIC was developed and fabricated by 1.0-μm CMOS technology with two metallic and two polysilicon layers. The IR FPAs were free of defect channels and have the average values of responsivity Sλ = 2.27×10⁸ V/W, the detectivity Dλ * = 2.13 × 10¹¹ cm × Hz½ × W⁻¹, and the noise equivalent temperature difference NETD = 9 mK.

3

4×288 readouts and FPAs properties

Sizov F. F., Reva V. P., Golenkov A. G., Vasiliev V. V., Suslyakov A. O.

Opto-Electronics Review

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2006

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Vol. 14, No. 1

79-86

EN

Analysis of four types 4×288 designed and manufactured readouts is presented. All the readouts have the direct injection input circuit with the circuits incorporated that allows testing procedure of readouts without the photodiodes attached to readout circuits. TDI registers have three delay elements between neighbouring inputs. Some characteristics of 4×288 FPAs with mercury-cadmium-telluride (MCT) arrays are presented too. Analysis have shown that in spite of different constructions of four readout types, different numbers of outputs and external service, rather similar parameters of FPAs have been obtained. Detectivity values measured for all 4×288 FPAs at operation temperature T ≈ 78 K with skimming mode included and background temperature Tb ≈ 295 K were in the range D*λ ≅ (1.2–1.7)×10¹¹ cmHz¹/²/W.

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HgCdTe MBE grown LWIR linear arrays

Sizov F. F., Vasiliev V. V., Esaev D. G., Ovsyuk V. N., Sidorov Y. G., Reva V. P., Golenkov A. G., Zabudsky V. V., Gumenjuk-Sychevskaya J. V.

Opto-Electronics Review

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2001

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Vol. 9, No. 4

391-396

EN

Mercury-cadmium-telluride (MCT) 2x64 linear arrays with silicon readouts were designed, manufactured and tested. MCT layers were grown by MBE method on (103) GaAs substrates with CdZnTe buffer layers. 50x50 [mi]m n-p-type photodiodes were formed by boron implantation. The parameters of long wavelenght infrared MCT linear arrays with cutoff wavelenght ʎco ≈ 10.0-12.2 [mi]m and Si readouts were tested separately before hybridisation. The HgCdTe arrays and Si readouts were hybridised by cold welding In bumps technology. Dark carrier transport mechanisms in these diodes were calculated and compared with experimental data. Two major curment mechanisms were included into the current balance equations: trap-assisted tunnelling and Shockley-Reed-Hall generation-recombination processes via a defect trap level in the gap. Other current mechanisms (band-to-band tunnelling, bulk diffusion) were taken into account as additive contributions. Tunnelling rate characteristics were calculated within k-p-aproximation with the constant barrier electric field. Good agreement with experimental data was obtained.