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1 1998

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X-ray and scanning electron microscopic investigation of porous silicon and silicon eptaxial layers grown on porous silicon

Wierzchowski W., Wieteska K., Graeff W., Pawłowska M., Nossarzewska-Orłowska E., Brzozowski A.

Electron Technology

1998

Vol. 31, No. 2

213-218

The 1 ÷ 5 μm thick layers of porous silicon and epitaxial layers grown on porous silicon were studied by means of X-ray diffraction methods, realised with wide use of synchrotron source and scanning electron microscopy. The results of X-ray investigation pointed the difference of lateral perodicity between the porous layer and the substrate. It was also found that the deposition of epitaxial layer considerably reduced the coherence of porous fragments. A number of interference phenomena was also observed in section and plane wave topographs. The scanning electron microscopic investigation of cleavage faces enabled direct evaluation of porous layer thicknees and revealed some details of thier morphology. The scanning observation of etched surfaces of epitaxial layers deposited on porous silicon revealed dislocations and other defects not resolvable in the X-ray topographs.