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1 Materials Science Poland

1 2016

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Characteristics of TlBr single crystals grown using the vertical Bridgman-Stockbarger method for semiconductor-based radiation detector applications

Kim D. J., Oh J.-H, Kim H. S., Kim Y. S., Jeong M., Kang C. G., Jo W. J., Choi H., Kim J. G., Lee S. H., Ha J. H

Materials Science Poland

2016

Vol. 34, No. 2

297--301

TlBr single crystals grown using the vertical Bridgman-Stockbarger method were characterized for semiconductor based radiation detector applications. It has been shown that the vertical Bridgman-Stockbarger method is effective to grow high-quality single crystalline ingots of TlBr. The TlBr single crystalline sample, which was located 6 cm from the tip of the ingot, exhibited lower impurity concentration, higher crystalline quality, high enough bandgap (>2.7 eV), and higher resistivity (2.5 × 1011 Ω·cm) which enables using the fabricated samples from the middle part of the TlBr ingot for fabricating high performance semiconductor radiation detectors.