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High-sensitivity NO2 sensor based on n-type InP epitaxial layers

Wierzbowska K., Adamowicz B., Mazet L., Brunet J., Pauly A., Bideux L., Varenne C., Berry L., Germain J. P.

Optica Applicata

2005

Vol. 35, nr 3

655-662

The structure and sensing properties of a novel resistive NO2 sensor based on n-type InP epitaxial layers have been presented. The studies of sensor resistance changes due to adsorbed gas NO2 under exposures in the range from 20 to 100 ppb at a temperature of 80°C were performed. The thickness of the active InP layer changed from 0.2 to 0.4 um. The response time and signal stability were also investigated. Furthermore, the influence of surface states and near-surface region on sensor parameters in terms of the resistance relative changes was shown from numerical simulations. The analysis of the measured photoelectron spectroscopy (XPS) spectra confirmed the complex chemical composition of the InP oxides, which gives rise to the high density of surface states.

Molecular materials : gas sensors properties, complementarity with metallic oxides

Pauly A., Germain J. P., Blanc J. P.

Electron Technology

2000

Vol. 33, No. 1/2

179-186

In this paper, we present the potentialities of using molecular materials as sensing elements of a gas sensor. We propose a model for interpreting the actions of gases on the electrical conductivity of molecular crystals. A particular attention is devoted to the phthalocyanines because of its great interest in such an application. Gas sensor parameters of some phthalocyanine layers are reviewed. A comparative study of gas sensor parameters of phthalocyanines and those presented by metallic oxides is made. This work shows the great variety of phthalocyanines molecules and gas sensors parameters associated. This points out the interest of the association between the two materials in a multi-sensor device.