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1
Content available Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors
Rogalski A., Kopytko M., Martyniuk P., Hu W.
Bulletin of the Polish Academy of Sciences. Technical Sciences
|
2020
|
Vol. 68, nr 4
845--855
EN
In the past decade, there has been significant progress in development of the colloidal quantum dot (CQD) photodetectors. The QCD’s potential advantages include: cheap and easy fabrications, size-tuneable across wide infrared spectral region, and direct coating on silicon electronics for imaging, which potentially reduces array cost and offers new modifications like flexible infrared detectors. The performance of CQD high operating temperature (HOT) photodetectors is lower in comparison with detectors traditionally available on the global market (InGaAs, HgCdTe and type-II superlattices). In several papers their performance is compared with the semiempirical rule, “Rule 07” (specified in 2007) for P-on-n HgCdTe photodiodes. However, at present stage of technology, the fully-depleted background limited HgCdTe photodiodes can achieve the level of room-temperature dark current considerably lower than predicted by Rule 07. In this paper, the performance of HOT CQD photodetectors is compared with that predicted for depleted P-i-N HgCdTe photodiodes. Theoretical estimations are collated with experimental data for both HgCdTe photodiodes and CQD detectors. The presented estimates provide further encouragement for achieving low-cost and high performance MWIR and LWIR HgCdTe focal plane arrays operating in HOT conditions.
2
Content available Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors
Michalczewski Krystian, Tsai T. Y., Martyniuk P., Wu C. H.
Bulletin of the Polish Academy of Sciences. Technical Sciences
|
2019
|
Vol. 67, nr 1
141--145
EN
We report on the photoresponse of mid-wavelength infrared radiation (MWIR) type-II superlattices (T2SLs) InAs/InAsSb high operating temperature (HOT) photoresistor grown on GaAs substrate. The device consists of a 200 periods of active layer grown on GaSb buffer layer. The photoresistor reached a 50% cut-off wavelength of 5 μm and 6 μm at 200 K and 300 K respectively. The time constant of 30 ns is observed at 200 K under 1 V bias. This is the first observation of the photoresponse in MWIR T2SLs InAs/InAsSb above 200 K..
3
Content available remote Type-II superlattice detectors for free space optics applications and higher operating temperature conditions
Hackiewicz K., Martyniuk P., Rutkowski J., Manyk T., Mikołajczyk J.
Opto-Electronics Review
|
2018
|
Vol. 26, No. 4
279--284
EN
The utmost limit performance of interband cascade detectors optimized for the longwave range ofinfrared radiation is investigated in this work. Currently, materials from the III–V group are character-ized by short carrier lifetimes limited by Shockley-Read-Hall generation and recombination processes.The maximum carrier lifetime values reported at 77 K for the type-II superlattices InAs/GaSb andInAs/InAsSb in a longwave range correspond to ∼200 and ∼400 ns. We estimated theoretical detectivityof interband cascade detectors assuming above carrier lifetimes and a value of ∼1–50μs reported for awell-known HgCdTe material. It has been shown that for room temperature the limit value of detctivityis of ∼3–4×10¹⁰cmHz½/W for the optimized detector operating at the wavelength range ∼10μm couldbe reached.
4
Content available Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design
Gomółka E., Markowska O., Kopytko M., Kowalewski A., Martyniuk P., Rogalski A., Rutkowski J., Motyka M., Krishna S.
Bulletin of the Polish Academy of Sciences. Technical Sciences
|
2018
|
Vol. 66, nr 3
317--323
EN
We present an investigation of optical and electrical properties of mid-wavelength infrared (MWIR) detectors based on InAs/GaSb strained layer superlattices (SLs) with nBnN and pBnN design. The temperature-dependent behavior of the bandgap was investigated on the basis of absorption measurements. A 50% cut-off wavelength of around 4.5 μm at 80 K and increase of up to 5.6 μm at 290 K was found. Values of Varshni parameters, zero temperature bandgap E0 and empirical coefficients α and β were extracted. Arrhenius plots of dark currents of nBnN and pBnN detectors were compared with the p-i-n design. Dark current density reduction in nBnN and pBnN detectors is observed in comparison to the p-i-n device. This shows a suppression of Shockley-Read-Hall (SRH) processes by means of introducing barrier architecture.
5
Content available Theoretical Simulation of a Room Temperature HgCdTe Long-Wave Detector for Fast Response - Operating Under Zero Bias Conditions
Martyniuk P., Kopytko M., Madejczyk P., Henig A., Grodecki K., Gawron W., Rutkowski J.
Metrology and Measurement Systems
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2017
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Vol. 24, nr 4
729--738
EN
The paper reports on a long-wave infrared (cut-off wavelength ~ 9 μm) HgCdTe detector operating under nbiased condition and room temperature (300 K) for both short response time and high detectivity operation. The ptimal structure in terms of the response time and detectivity versus device architecture was shown. The response time of the long-wave (active layer Cd composition, xCd = 0.19) HgCdTe detector for 300 K was calculated at a level of τs ~ 1 ns for zero bias condition, while the detectivity - at a level of D* ~ 109 cmHz1/2/W assuming immersion. It was presented that parameters of the active layer and P+ barrier layer play a critical role in order to reach τs ≤ 1 ns. An extra series resistance related to the processing (RS+ in a range 5-10 Ω) increased the response time more than two times (τs ~ 2.3 ns).
6
Content available Fast Response Hot (111) HGCDTE MWIR Detectors
Grodecki K., Martyniuk P., Kopytko M., Kowalewski A., Stępień D., Kębłowski A., Piotrowski A., Piotrowski J., Gawron W., Rogalski A.
Metrology and Measurement Systems
|
2017
|
Vol. 24, nr 3
509--514
EN
In this work we report simulation and experimental results for an MWIR HgCdTe photodetector designed by computer simulation and fabricated in a joint laboratory run by VIGO Sytems S.A. and Military University of Technology. The device is based on a modified N+pP+ heterostructure grown on 2”., epiready, semi-insulating (100) GaAs substrates in a horizontal MOCVD AIX 200 reactor. The devices were examined by measurements of spectral and time responses as a function of a bias voltage and operating temperatures. The time response was measured with an Optical Parametric Oscillator (OPO) as the source of ~25 ps pulses of infrared radiation, tuneable in a 1.55–16 μm spectral range. Two-stage Peltier cooled devices (230 K) with a 4.1 μm cut-off wavelength were characterized by 1.6 × 1012 cm Hz1/2/W peak detectivity and < 1 ns time constant for V > 500 mV.
7
Content available remote Heavily Si-doped InAs photoluminescence measurements
Grodecki K., Murawski K., Henig A., Michalczewski K., Benyahia D., Kubiszyn Ł., Martyniuk P.
Materials Science Poland
|
2017
|
Vol. 35, No. 3
647--650
EN
In this paper, we present experimental results of photoluminescence for series of InAs:Si heavily doped samples, with doping level varying from 1.6 × 1016 cm−3 to 2.93 × 1018 cm−3. All samples were grown using MBE system equipped with a valved arsenic cracker. The measurements were performed in the temperature range of 20 K to 100 K. Although the Mott transition in InAs appears for electron concentrations above 1014 cm−3, Burstein-Moss broadening of photoluminescence spectra presented in this article was observed only for samples with concentration higher than 2 × 1017 cm−3. For the samples with lower concentrations two peaks were observed, arising from the band gap and defect states. The intensity of the defect peak was found to be decreasing with increasing temperature as well as increasing concentration, up to the point of disappearance when the Burstein-Moss broadening was visible.
8
Content available remote Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy
Benyahia D., Kubiszyn Ł., Michalczewski K., Kębłowski A., Martyniuk P., Piotrowski J., Rogalski A.
Opto-Electronics Review
|
2016
|
Vol. 24, No. 1
40--45
EN
Non-intentionally doped GaSb epilayers were grown by molecular beam epitaxy (MBE) on highly mismatched semi-insulating GaAs substrate (001) with 2 offcut towards (110). The effects of substrate temperature and the Sb/Ga flux ratio on the crystalline quality, surface morphology and electrical properties were investigated by Nomarski optical microscopy, X-ray diffraction (XRD) and Hall measurements, respectively. Besides, differential Hall was used to investigate the hole concentration behaviour along the GaSb epilayer. It is found that the crystal quality, electrical properties and surface morphology are markedly dependent on the growth temperature and the group V/III flux ratio. Under the optimized parameters, we demonstrate a low hole concentration at very low growth temperature. Unfortunately, the layers grown at low temperature are characterized by wide FWHM and low Hall mobility.
9
Detektory barierowe : nowe trendy
Martyniuk P., Kopytko M., Rogalski A.
Elektronika : konstrukcje, technologie, zastosowania
|
2016
|
Vol. 57, nr 9
62--65
PL
W artykule omówiono nowe trendy w rozwoju wysokotemperaturowych – nie wymagających chłodzenia kriogenicznego – barierowych detektorów podczerwieni. Przedstawiono podstawy teoretyczne, podstawową strukturę typu nBn, jak również dokonano przeglądu materiałów wykorzystywanych do wytwarzania detektorów barierowych pod względem granicznych wartości prądu ciemnego. Przedstawiono osiągi detektorów barierowych wytwarzanych z supersieci-II rodzaju materiałów grupy AIIIBV InAs/GaSb i InAs/InAsSb. W przypadku InAs/InAsSb szacowania teoretyczne wskazują na lepsze osiągi niż te uzyskiwane dla układu InAs/GaSb. Nie pominięto materiałów objętościowych z grupyAIIIBV: InAs, InAsSb i InGaAsSb, jak również dominującego obecnie HgCdTe. Detektory barierowe związków grupyAIIIBV, zarówno z materiałów litych jak i z supersieci-II typu, stanowią realną alternatywę dla HgCdTe do zastosowań wysokotemperaturowych, choć najniższe graniczne wartości prądu nadal uzyskuje się dla struktur z HgCdTe.
EN
In the paper we discussed the new trends in higher operating temperature – exhibiting no requirements related to the cryogenic cooling – the barrier IR detectors. We presented basic theory, simple nBn structure, and reviewed the materials used for the nBn detectors in terms of the utmost dark current. The performance was presented for type-II superllatices InAs/GaSb and InAs/InAsSb. Theoretical simulations indicate that T2SLs InAs/InAsSb exhibits lower SRH generation recombination rates in comparison to the InAs/GaSb. The performance of the bulk InAsSb and HgCdTe materials was also presented. TheAIIIBV bulk and type-II superlattices barrier detectors could be treated as an alternative to the HgCdTe detectors for higher operating temperature conditions. The utmost dark current was found for HgCdTe nBn barrier detectors.
10
Content available remote Status of long-wave Auger suppressed HgCdTe detectors operating > 200 K
Martyniuk P., Gawron W., Stępień D., Pawluczyk J., Kębłowski A., Madejczyk P., Kopytko M., Koźniewski A.
Opto-Electronics Review
|
2015
|
Vol. 23, No. 4
278-286
EN
We report on the status of long-wave infrared Auger suppressed HgCdTe multilayer structures grown on GaAs substrates designed for high operating temperature condition: 200-300 K exhibiting, detectivity ~10¹¹ cmHz¹/² /W, time response within a ~120 ps range at 230 K. Abnormal responsivity within the range of ~30 A/W for electrical area 30×30 μm² under reverse bias V = 150 mV is reported. Maximum extraction coefficient of ~2.3 was estimated for analysed structures.
11
Content available remote MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions
Martyniuk P., Koźniewski A., Kębłowski A., Gawron W., Rogalski A.
Opto-Electronics Review
|
2014
|
Vol. 22, No. 2
118-126
EN
The paper reports on photoelectrical performance of the mid-wave infrared HgCdTe detector for high operating temperature condition. Detector structure was simulated with APSYS numerical platform by Crosslight Inc. The comprehensive analysis of the detector performance such as dark current, detectivity, time response vs. device architecture and applied bias has been performed. The N⁺pP⁺n⁺ HgCdTe heterostructure photodiode operating in room temperature at a wavelength range of 2.6–3.6 μm enabled to reach: detectivity ~ 8.7×10¹⁰ cmHz¹/²/W, responsivity ~ 1.72 A/W and time response ~ 145 ps(V = 200 mV).
12
Content available remote Barrier infrared detectors
Martyniuk P., Kopytko M., Rogalski A.
Opto-Electronics Review
|
2014
|
Vol. 22, No. 2
127-146
EN
In 1959, Lawson and co-workers publication triggered development of variable band gap Hg1-xCdxTe (HgCdTe) alloys providing an unprecedented degree of freedom in infrared detector design. Over the five decades, this material system has successfully fought off major challenges from different material systems, but despite that it has more competitors today than ever before. It is interesting however, that none of these competitors can compete in terms of fundamental properties. They may promise to be more manufacturable, but never to provide higher performance or, with the exception of thermal detectors, to operate at higher temperatures. In the last two decades a several new concepts of photodetectors to improve their performance have been proposed including trapping detectors, barrier detectors, unipolar barrier photodiodes, and multistage detectors. This paper describes the present status of infrared barrier detectors. It is especially addressed to the group of III-V compounds including type-II superlattice materials, although HgCdTe barrier detectors are also included. It seems to be clear that certain of these solutions have merged as a real competitions of HgCdTe photodetectors.
13
Content available Barrier detectors versus homojunction photodiode
Martyniuk P., Gawron W.
Metrology and Measurement Systems
|
2014
|
Vol. 21, nr 4
675--684
EN
In the last two decades several new concepts of photodetectors to improve their performance have been proposed. New strategies are especially addressed to the group of so called high-operating-temperature detectors where - apart from increasing of operating temperature - both the size and power consumption reduction is expected. In this paper a new strategy in the photo-detector design is presented - the barrier detectors: CnBn; CnBnN+, CpBn and unipolar barrier photodiodes. In spite of considering barrier detectors based on AIIIBV bulk compounds and type-II superlattices as having theoretically a better performance than those based on HgCdTe, the latter compound is also used to fabricate barrier detectors. Among many new applications of barrier detectors the detection of explosives can be extremely important due to an increased threat of terrorist attacks. This paper presents the status of the barrier detectors and compares the performance of mid-wave HgCdTe barrier detectors and unipolar barrier photodiodes.
14
Content available remote HOT infrared photodetectors
Martyniuk P., Rogalski A.
Opto-Electronics Review
|
2013
|
Vol. 21, No. 2
239-257
EN
At present, uncooled thermal detector focal plane arrays are successfully used in staring thermal imagers. However, the performance of thermal detectors is modest, they suffer from slow response and they are not very useful in applications requiring multispectral detection. Infrared (IR) photon detectors are typically operated at cryogenic temperatures to decrease the noise of the detector arising from various mechanisms associated with the narrow band gap. There are considerable efforts to decrease system cost, size, weight, and power consumption to increase the operating temperature in so-called high-operating-temperature (HOT) detectors. Initial efforts were concentrated on photoconductors and photoelectromagnetic detectors. Next, several ways to achieve HOT detector operation have been elaborated including non-equilibrium detector design with Auger suppression and optical immersion. Recently, a new strategies used to achieve HOT detectors include barrier structures such as nBn, material improvement to lower generation-recombination leakage mechanisms, alternate materials such as superlattices and cascade infrared devices. Another method to reduce detector's dark current is reducing volume of detector material via a concept of photon trapping detector. In this paper, a number of concepts to improve performance of photon detectors operating at near room temperature are presented. Mostly three types of detector materials are considered - HgCdTe and InAsSb ternary alloys, and type-II InAs/GaSb superlattice. Recently, advanced heterojunction photovoltaic detectors have been developed. Novel HOT detector designs, so called interband cascade infrared detectors, have emerged as competitors of HgCdTe photodetectors.
15
Content available Modeling of HgCdTeLWIR detector for high operation temperature conditions
Martyniuk P., Gawron W., Madejczyk P., Rogalski A., Piotrowski J.
Metrology and Measurement Systems
|
2013
|
Vol. 20, nr 2
159--170
EN
The paper reports on the photoelectrical performance of the long wavelength infrared (LWIR) HgCdTe high operating temperature (HOT) detector. The detector structure was simulated with commercially available software APSYS by Crosslight Inc. taking into account SRH, Auger and tunnelling currents. A detailed analysis of the detector performance such as dark current, detectivity, time response as a function of device architecture and applied bias is performed, pointing out optimal working conditions.
16
Detektory HOT zakresu średniej podczerwieni
Martyniuk P., Gawron W., Rogalski A.
Elektronika : konstrukcje, technologie, zastosowania
|
2013
|
Vol. 54, nr 10
35-38
PL
Fotonowe detektory średniej podczerwieni wymagają chłodzenia celem zredukowania niepożądanych szumów, wśród których główną rolę odgrywają procesy generacyjno-rekombinacyjne (GR) Augera i Shockley-Read-Halla (SRH), jak również efekty tunelowe. Zwiększenie temperatury pracy detektora (warunki pracy HOT – high operating temperature) jest istotnym elementem wytwarzania systemów detekcyjnych spełniających kryteria SWaP (size, weight and power). Początkowe prace nad detektorami HOT skupiły się na wykorzystaniu efektu fotoprzewodnictwa i efektu fotoelektromagnetycznego. W następnej kolejności podjęto próby wykorzystania zjawisk nierównowagowych ograniczających procesy GR Augera, jak również zredukowania objętości detektora, czego ostatnim przykładem są struktury typu PTD (photon trapping detectors). Badane od dwóch dekad unipolarne i komplementarne struktury barierowe, jak również struktury wielokrotne (CID-cascade infrared detectors) zademonstrowały możliwości pracy w warunkach HOT. Niniejszy artykuł przedstawia osiągi barierowych detektorów typu nBnnn+ InAsSb; nBnn, nB1nB2 z HgCdTe oraz CID z T2SLs InAs/GaSb oraz ich możliwości w rozwoju wysokotemperaturowych detektorów MWIR na tle innych technologii HOT.
EN
The photon infrared detectors require cryogenic cooling to suppress dark current, which is typically limited by Shockley-Read-Hall (SRH) and Auger generation-recombination (GR) processes and tunneling effects. Currently, increasing the operating temperature (HOT-high operating temperature) of the infrared detection systems without sacrificing its performance remains to be a crucial objective as for as SWaP (size, weight and power) is concerned. The preliminary R&D was focused on the photoconductive and photoelectromagnetic effects. The next step was to incorporate non-equilibrium effects to suppress GR Auger process. The idea of PTD (photon trapping detectors) has been used to increase quantum efficiency and limit dark current. Recently, the barrier UBIRD and CBIRD structures (T2SLs InAs/GaSb, InAsSb, HgCdTe) and cascade architectures (CID - cascade infrared detectors) has shown the potential capabilities to operate at HOT conditions. The paper presents the nBnnn+ InAsSb; nBnn, nB1nB2 z HgCdTe barrier structures’ performance and T2SLs InAs/GaSb CID detectors and their potential capabilities in HOT detectors’ development in MWIR range.
17
Content available Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector
Martyniuk P., Rogalski A.
Bulletin of the Polish Academy of Sciences. Technical Sciences
|
2013
|
Vol. 61, nr 1
211-220
EN
The paper reports on the medium wavelength infrared (MWIR) unipolar barrier infrared detector (UBIRD) nBn/B-n type (n-type barrier) HgCdTe detector’s photoelectrical performance. The UBIRD nBn/B-n type HgCdTe detector was modelled using commercially available software APSYS. Detailed analysis of the detector’s performance (such as dark current, photocurrent, responsivity, and detectivity) versus bias voltage, operating temperatures, and structural parameters (cap, barrier, and absorber’s doping as well as cap and barrier compositions) were performed pointing out optimal working conditions. Both conduction and valence band alignments of the HgCdTe nBn/B-n type detector structure was simulated stressing their importance on detectors performance. It was shown that higher operation temperature (HOT) conditions achieved by commonly used thermoelectric (TE) coolers allow to obtain detectivities of D* = (3-10)×109 cmHz1/2/W at T = 200 K for detectors with cut-off wavelength of 5.2 ?m The differential resistance area product of RA = 0.15-0.4 cm2 at T = 230 K for bias voltage V = 50 mV was estimated. Finally, the state of the art of UBIRD HgCdTe nBn/B-n type detector performance was compared to InAs/GaSb/B-Al0.2Ga0.8Sb T2SLs nBn detector, InAs/GaSb T2SLs PIN and the HOT HgCdTe bulk photodiodes’ operated at near-room temperature (T = 230 K). It was shown that the RA product of the MWIR UBIRD nBn/B-n type HgCdTe detector can reach a comparable level to the state of the art of the HgCdTe HOT bulk photodiodes and two types of type-II superlattice detectors: PIN photodiodes and nBn detectors.
18
Długofalowe fotodiody z HgCdTe pracujące w temperaturach bliskich pokojowej
Madejczyk P., Gawron W., Martyniuk P., Kowalewski A., Pawluczyk J., Piotrowski A., Kębłowski A., Pusz W., Piotrowski J.
Elektronika : konstrukcje, technologie, zastosowania
|
2012
|
Vol. 53, nr 10
13-15
PL
Praca prezentuje wyniki badań nad minimalizacją, prądu ciemnego w heterostrukturach z HgCdTe przeznaczonych do delekcji promieniowania podczerwonego w zakresie LWIR W artykule przedstawiono wyniki symulacji z wykorzystaniem pakietu APSYS wspomagającego projektowanie heterostruktur z HgCdTe optymalizowanych ze względu na pracę w warunkach nierównowagowych. Do wytwarzania takich struktur wykorzystano technologię MOCVD, która umożliwia osądzanie warstw HgCdTe o dowolnym profilu składu i domieszkowania zarówno donorowego jak i akceptorowego bez konieczności wygrzewania poprocesowego. Przedstawiono wpływ architektury absorbera oraz warstw przejściowych (interfejsów) na wartość prądu ciemnego l min.
EN
The researches on minimizing of dark current in HgCdTe heterastructures designed for infrared detection in LWIR range are presented. The paper presents program APSYS simulation results supporting design of HgCdTe heterestructures optimized for non-equilibrium mode of operation. MOCVD technology have been used for HgCdTe deposition with lull range of composition and donor and acceptor doping without post grown annealing. The absorber layer and interface layers architecture influence on dark current l min are presented.
19
Barierowe struktury detekcyjne : nowe możliwości
Martyniuk P., Kowaleski A., Gawron W., Rogalski A.
Elektronika : konstrukcje, technologie, zastosowania
|
2012
|
Vol. 53, nr 11
102-105
PL
Detektory promieniowania podczerwonego z wąską przerwą energetyczną wymagają chłodzenia celem ograniczenia prądów ciemnych generowanych w strukturze detekcyjnej wśród których najważniejszymi są: procesy generacyjno - rekombinacyjne Shockley-Read-Halla i procesy Augera. Obecnie, zwiekszenie temperatury pracy urządzeń detekcyjnych bez ograniczenia ich osiągów jest głównym celem wielu zespołów badawczych. Procesy generacyjno - rekombinacyjne Augera można ograniczyc poprzez budowę urządzęń detekcyjnych z supersieci II rodzaju (type II superlattice - T2SLs) z związków AIIIBV należących do rodziny 6.1 L. Implementacja barier do struktur detekcyjnych pozwala zredukować niekorzystny wpły procesów Shockley-Read-Halla. Ograniczenie wpływu obu mechanizmów pozwoli zwiększyć temperaturę pracy detektora. Artykuł przedstawia osiągi unipolarnych detektorów nBn z T2SLs InAs/GaSb/B- AI₀.₂Ga₀.₈Sb i HgCdTe oraz ich potencjalne możliwości w rozwoju detektorów promieniowania podczerwonego.
EN
The narrow band gap infrared detectors require cryogenic cooling to suppress dark current, which is typically limited by Shockley-Read-Hall (SRH) and Auger generation-recombination processes. Currently, increasing the operating temperature of the infrared detection systems without sacrificing its performance remains to be a crucial objective of the research groups. Intrinsic Auger thermal generation recombination process could be controlled by implementation of the type II superlattices (T2SLs) AIIIBV 6.1 L family to the detectors architecture while extrinsic SRH process could be suppressed by the barrier's incorporation into detector's structure respectively. Both SHR and Auger suppression lead to increase of the device's operating temperature. The paper reports on the unipolar barrier infrared detector (UBIRD) medium wavelength infrared (MWIR) HgCdTe nBn/B-n type and T2SLs nBn lnAs/GaSb/B-AI₀.₂Ga₀.₈Sb detector's photoelectrical performance and their potential possibilities in the field of infrared detectors development.
20
Content available remote Insight into performance of quantum dot infrared photodetectors
Martyniuk P., Rogalski A.
Bulletin of the Polish Academy of Sciences. Technical Sciences
|
2009
|
Vol. 57, nr 1
103-116
EN
In the paper, an algorithm for theoretical evaluation of dark and illumination characteristics of quantum dot infrared photodetectors (QDIPs) is presented. The developed algorithm is based on a model previously published by Ryzhii and co-workers. In our considerations it is assumed that both thermionic emission and field-assisted tunnelling mechanisms determine the dark current of quantum dot detectors. The model permits to calculate the dark current, current gain, average number of electrons in quantum dots, photocurrent, and detector responsivity as a function of the structural parameters. Moreover, it explains some features of QDIP characteristics. In several cases, the theoretical predictions are compared with experimental data. Good agreement between both kinds of data has been obtained.
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