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Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg₁₋xCdxTe

Gasan-Zade S. G., Strikha M. V., Shepelskii G. A.

Opto-Electronics Review

2010

Vol. 18, No. 3

305-309

The intensive far infra-red irradiation in the range of 80–100 μm was observed in uniaxially strained gapless p-Hg₁₋xCdxTe (MCT) with x = 0.14 in the strong electric field. The inverse occupation in strained MCT is created because the hot electrons distribution occurs in the c-band under impact ionization, while the holes are localized near the v-band top. The probability of band-to-band radiative transition increases dramatically when the acceptor level becomes resonance in the v-band. At threshold values of strain and electric field (P = 2.5-2.7 kbar, E = 50-55 V/cm), increase in irradiation (by 3 orders of magnitude) and increase in current (by 4-6 times) occur.

Far infrared photoelectric phenomenain gapless Hg1-xCdxTe

Gasan-Zade S. G., Salkov E. A., Shepelskii G. A.

Opto-Electronics Review

1998

Vol. 6, No. 4

257-262

Photoelectric phenomena in the gapless Hg₁-xCdxTe (x=0.04 - 0.16) are usually dependent on the effect of electron mobolity variation (e. g., u-photoconductivity). This article shows that considerable increase in internal photoeffect in the Hg₁-xCdxTe (x=0.04 - 0.16) can be obtained with application of external actions which induce production of energy gap and recombination processes occur. It is proved by the study of the Hall effect and photo-Hall effect, photoconductivity and photoelectromagnetic voltage at highly enough magnetic uniaxial compression. The induced energy gap is rather wide tuned, from zero up to 0.05 eV. IR irradiation excites a photoconductivity which is sharply intensfield for certain magnitudes of the magnetic field or uniaxial elestic deformation. Photoconductivity and photoelectromagnetic voltage oscillations of very high amplitude are observed within the quantum limit region of the magnetic fields. It is due to perculiar features of recombination where the longitudinal optical phonos are involved. Millimetre radiation photoconductivity exhibits the giant surge which is caused by variations in the electron concentration but not the electron mobility.