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1

In-plane magnetic anisotropy symmetry in ultrathin Co films grown on sapphire substrates

Stupakiewicz A., Maziewski A., Trzciński P., Baczewski L. T., Wawro A., Kalinowski R.

Materials Science Poland

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2007

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Vol. 25, No. 2

429--433

EN

We report on the study of in-plane magnetic anisotropy and magnetization reversal in MBE grown ultrathin epitaxial Mo/Au/Co/Au magnetic films. We used a magneto-optical polar Kerr effect-based magnetometer and real-time data analysis using LabView software. A two-fold in-plane magnetic anisotropy symmetry was deduced from the shape analysis of the magnetization curves measured for various directions of in-plane applied magnetic field. The direction of easy magnetization axis in the sample plane is a result of a small, unintentional miscut of the sapphire substrate found by in-situ STM and X-ray diffraction measurements.

2

Image processing study of ultrathin cobalt domain structure evolution induced by overlayer structure

Dobrogowski W., Kurant Z., Nedzved A., Stefanowicz W., Tekielak M., Baczewski L. T., Wawro A., Maziewski A.

Materials Science Poland

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2007

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Vol. 25, No. 2

403--410

EN

Evolution of the domain structure (DS) in ultrathin cobalt films, deposited on sapphire substrate with the following structure: X\Au\Co(dCo nm thick layer or wedge)\X (dX nm thick layer or wedge perpendicular to Co wedge axis)\Au (where X is V or Mo) with perpendicular magnetization was investigated as a function of thickness dX. The study was performed using an optical polarizing microscope with CCD camera. Images of DS were recorded during various stages of magnetization reversal. A special software based on LabViewŽ was employed for acquisition and processing of domain images. To analyze the observed domain structures, topology properties of magnetic images were determined. Preferential orientation of domain walls was found in ultrathin Co covered by Mo but not by V.

3

Magnetic ordering in ultrathin Co films grown on vicinal substrates

Stupakiewicz A., Gieniusz R., Postava K., Tekielak M., Maziewski A., Szerel I., Wawro A., Baczewski L.T.

Materials Science Poland

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2006

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Vol. 24, No. 3

659--664

EN

The magnetic anisotropy of ultrathin Au/Co/Au magnetic films epitaxially grown on vicinal monocrystalline (11-20) sapphire substrates with different miscut angles covered with a Mo buffer are investigated by means of ferromagnetic resonance and magnetooptical techniques. Changes of in-plane magnetic anisotropy symmetry were deduced from shape analysis of the magnetization curves and angular dependence of the resonance field measured in the sample plane. Two-fold and four-fold symmetry was observed for different miscut angles. The preference of the domain wall orientation is observed. The experimental data are discussed taking into account the following energy contributions: (i) shape anisotropy; (ii) perpenducular uniaxial anisotropy; (iii) and step-induced uniaxial anisotropy.

4

Domain structures and magnetization processes in thin Co films with in-plane anisotropy

Jaworowicz J., Kurant Z., Postava K., Maziewski A., Baczewski L.T., Wawro A.

Materials Science Poland

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2006

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Vol. 24, No. 3

639--642

EN

The magnetization reversal and domain structures in thin Co films in the thickness range 2 nm

5

Dendritic domain structures in ultrathin cobalt films

Stefanowicz W., Tekielak M., Bucha V., Maziewski A., Zablotskii V., Baczewski L.T., Wawro A.

Materials Science Poland

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2006

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Vol. 24, No. 3

783--788

EN

We report on study of dendritic domain structures (DDS) in gold enveloped cobalt ultrathin films of thicknesses slightly below the thickness at which the reorientation from perpendicular magnetization state to in-plane state takes place. In these films magnetization reversal undergoes through the dendritic growth of domains. The magnetic aftereffect was observed. We reveal the mechanism and key parameters controlling the dendritic growth of magnetic domains.

6

Badanie wybranych warstw optycznych mikroskopem sił atomowych i metodami komplementarnymi.

Ciosek J., Pankowski P., Paszkowicz W., Pełka J.B., Marczak J., Ostrowski R., Baczewski L.T.

Inżynieria Materiałowa

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2001

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R. XXII, nr 6

1060-1066

PL

Dielektryczne warstwy z materiałów tlenkowych: HfO2 i ZrO2 mają zastosowanie w zwierciadłach laserowych dla zakresów UV-IR. Materiały te posiadają szczególne własności, gdyż oprócz wysokiej wytrzymałości na działanie wiązki laserowej, charakteryzują się małymi rozproszeniami promieniowania i niskim pochłanianiem promieniowania w zakresie od 0,25 mikrometra do 7 mikrometrów. W pracy badano własności warstw HfO2 i ZrO2 nanoszonych metodą PVD z zastosowaniem działa elektronowego (EB). Badano jakość powierzchni warstw metodą AFM, strukturę warstw metodami XRD i GIXR oraz odporność na działanie promieniowania lasera Nd: YAG. Stwierdzono występowanie różnic struktury warstw HfO2 naniesionych na podłoże ze szkła BK7 i topionego kwarcu. Określono progi odporności warstw na działanie promieniowania lasera Nd: YAG.

EN

Dielectric oxide layers: HfO2 and ZrO2 are used in laser mirrors for UV-IR ranges. They are characterised by unique properties, because except for their good resistivity on high-energy laser beam, they also exhibit a low scattering level and low absorption coefficient for radiation from 0,25 micrometers to 7 micrometers. The layers were evaporated by PVD method with electron beam (EB) guns. Morphology of the experimental materials layers was comprehensively characterised by atomic force microscopy (AFM). Their microstructure was studied by X-ray diffraction (XRD) and X-ray reflectometry (GIXR). Their radiation-damage threshold was investigated at wavelength of Nd:YAG laser. The analysis demonstrates a structural difference between HfO2 layers evaporated on the BK7 glass and on melted quartz substrates.

7

Badania warstw HfO2 metodą AFM i metodami rentgenowskimi

Ciosek J., Pankowski P., Pełka J. B., Paszkowicz W., Baczewski L. T.

Elektronika : konstrukcje, technologie, zastosowania

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2001

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Vol. 42, nr 8-9

60-62

EN

Dielectric hafnia layers are used in laser mirrors for UV-IR ranges. They are characterised by unique properties, because except for their good resistively on high-energy laser beam, they also exhibit o low scattering level and low absorption coefficient for radiation from 0,25 u.m to 7 um. The layers were evaporated by PVD method with electron beam (EB) guns. Morphology of the experimental material's layers was studied by X-ray diffraction (XRD) and X-ray reflectometry (GIXR). Their radiation-damage threshold was investigated at wavelength of Nd:YAG laser. The analysis demonstrates a structural difference between HfO2 layers evaporated on the BK7 glass and on melted quartz susbstrates.