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2 Materials Science Poland

2 2013

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Optimization of deposition temperature of SILAR Cu-rich CuInS2 thin films

Maheswari B., Dhanam M.

Materials Science Poland

2013

Vol. 31, No. 2

193--200

CuInS2 (CIS) is studied widely as a promising absorber material for high efficient and low cost thin film solar cells. CIS thin films are prepared on soda lime glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at different deposition temperatures (40 to 70 °C). The structural, compositional and optical properties are studied with x-ray diffractometer, energy dispersive x-ray analyzer and spectrophotometer. The influence of the deposition temperature on the properties of CIS thin films is discussed in this paper in detail.

Identification of growth mechanism of CBD CIAS thin films from SEM analysis

Kavitha B., Dhanam M.

Materials Science Poland

2013

Vol. 31, No. 4

506--515

Near stoichiometric and stoichiometric CuIn(1-x)Al(x)Se2 (CIAS) thin films have been prepared by chemical bath deposition (CBD) technique. X-ray diffraction (XRD) and energy dispersive x-ray analysis (EDAX) spectra have been employed to confirm the structure and composition of the prepared films. SEM analysis of near-stoichiometric and stoichiometric CIAS thin films enabled us to estimate the grain size, to identify the growth mechanism and also to visualize the surface morphology. Transmittance spectra have been employed to determine the type of transition and other optical parameters such as absorption coefficient, extinction coefficient, dielectric constant, refractive index, Sellmeier parameters and bandgap which are reported in this paper in detail.