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Controlled fluoridation of amorphous carbon films deposited at reactive plasma conditions

Yoffe A., Zon I., Feldman Y., Shelukhin V.

Materials Science Poland

2015

Vol. 33, No. 3

606--611

A study of the correlations between plasma parameters, gas ratios, and deposited amorphous carbon film properties is presented. The injection of a C4F8/Ar/N2 mixture of gases was successfully used in an inductively coupled plasma system for the preparation of amorphous carbon films with different fluoride doping at room-temperature, using silicon as a substrate. This coating was formed at low-pressure and low-energy using an inductively coupled plasma process. A strong dependence between the ratios of gases during deposition and the composition of the substrate compounds was shown. The values of ratios between Ar (or Ar+ N2) and C4F8 - 1:1 and between N2 and Ar - 1:2 in the N2/Ar/C4F8 mixture were found as the best for low fluoridated coatings. In addition, an example of improving the etch-passivation in the Bosch procedure was described. Scanning electron microscopy with energy dispersive spectroscopy options, X-ray diffraction, and X-ray reflectivity were used for quantitative analysis of the deposited films.

Modification of the 306 Edwards sputtering system for the reproducible fabrication of sensitive thin films

Yoffe A., Shelukhin V.

Materials Science Poland

2010

Vol. 28, No. 4

833--839

Modifications to the 306 Edwards sputtering system have been discussed for the production of sensitive thin films, specifically amorphous pyroelectric perovskite films. For technical reasons, it is not possible to produce high quality thin films using standard sputtering systems. Furthermore, additional problems arise with the reproducibility of the films. The authors found that in unmodified sputtering systems, a general problem is that independent adjusting of the pressure in the chamber and the gas flow during the sputtering is not possible. Additional problems were low accuracy of gas ratio measurements, and high temperature radiation during sputtering which made impossible keeping the temperature conditions during deposition. Modifications to a standard set-up have been proposed and its operation has been checked. As a test-case, SrTiO3 thin film samples were fabricated. Their high quality confirmed validity of the modifications.