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Czochralski-Based Growth and Characteristics of Selected Novel Single Crystals for Optical Applications

Shimamura K., Víllora E. G.

Zeszyty Historyczne Politechniki Warszawskiej

2014

z. 16

113--121

In the Year of Professor Jan Czochralski, we with pleasure review the representative recent works of our group, Optical Single Crystals Group, NIMS, Japan. Our group has been working on the development of novel single crystals for optical applications based on the Czochralski technique. Here, 4 kinds of topics are reviewed. 1st one is ferroelectric fluoride BaMgF4 single crystals for UV nonlinear optical applications including quasi-phase matching device fabrications. 2nd one is transparent conductive β-Ga2O3 single crystals as semiconductor, which has large band-gap, 4.8 eV, for LED applications. 3rd one is F-doped core-free Y3Al5O12 single crystals as a potential new lens material for UV/VUV wavelength region. Last one is superior magneto-optical {Tb3}[Sc2-xLux](Al3)O12 single crystals for near infrared to visible region, and CeF3/PrF3 single crystals for UV region.

Crystal growth of new functional materials for electro-optical applications

Fukuda T., Shimamura K., Yoshikawa A., Villora E. G.

Opto-Electronics Review

2001

Vol. 9, No. 2

109-116

High quality fluoride and oxide single crystals for optical, piezoelectric, and other applications have been grown by advanced crystal growth techniques. Corquiriite- and Perovskite-type fluoride single crystals - LiCaAlF₆, LiSrAlF₆, KMgF₃ and BaLiFi₃ - have been grown for solid state ultraviolet laser applications, and as window materials for next generation optical lithography. La₃Nb₀.₅Ga₅.₅O₁₄ and La₃Ta₀.₅Ga₅.O₁₄ piezoelectric single crystals of size and quality comparable to La₃Ga₅SiO₁₄ (langasite) have been produced. The piezoelectric and device properties of the crystals were investigated. A search for new langasite-type materials was also performed. Promising new structural materials, Al₂O₃/RE₃Al₅O₁₂ (RE = rare earth) eutectic fibres, have been grown by the micro-pulling-down technique. Undoped and doped b-Ga₂O₃ single crystals have been grown by the floating zone technique as promising transparent conductive oxides.