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1 2012

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Sub-THz radiation room temperature sensitivity of long-channel silicon field effect transistors

Sizov F., Golenkov A., But D., Sakhno M., Reva V.

Opto-Electronics Review

2012

Vol. 20, No. 2

194-199

Room temperature operating n-MOSFETs (n-type metal-oxide silicon field effect transistors) used for registration of sub-THz (sub-terahertz) radiation in the frequency range v = 53-145 GHz are considered. n-MOSFETs were manufactured by 1-µm Si CMOS technology applied to epitaxial Si-layers (d ≈15 µm) deposited on thick Si substrates (d = 640 µm). It was shown that for transistors with the channel width to length ratio W/L = 20/3 µm without any special antennas used for radiation input, the noise equivalent power (NEP) for radiation frequency v ≈76 GHz can reach NEP ∼6x10⁻¹⁰ W/Hz¹/². With estimated frequency dependent antenna effective area Sest for contact wires considered as antennas, the estimated possible noise equivalent power NEPpos for n-MOSFET structures themselves can be from ∼15 to ∼10³ times better in the specral range of v ∼55-78 GHz reaching NEPpos ≈10⁻¹² W/Hz¹/².