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Design and analytical calculations of the width and arrangement of quantum well and barrier layers in GaN/AlGaN LED to enhance the performance

Sharma L., Sharma R.

Opto-Electronics Review

2021

Vol. 29, No. 4

141--147

This research paper discusses an analytical approach to designing the active region of light emitting diodes to enhance its performance. The layers in the active region were modified and the effects of changing the width of quantum well and barrier layers in a multi-quantum light emitting diode on the output power and efficiency have been investigated. Also, the ratio of the quantum well width to the B layer width was calculated and proposed in this research paper. The study is carried out on two different LED structures. In the first case (i.e., first structure), the width of the quantum well layers is kept constant while the width of the B layers is varied. In the second case (i.e., second structure), both the quantum well and B layer widths are varied. Based on the simulation results, it has been observed that the LED power efficiency increases considerably for a given quantum well to B layers width ratio without increasing the production complexity. It is also seen that for a desired power efficiency the width of quantum well should be between 0.003 μm and 0.006 μm, and the range of B width (height) should be 2.2 to 6 times the quantum well width. The proposed study is carried out on the GaN-AlGaN-based multi-quantum well LED structure, but this study can be extended to multiple combinations of the semiconductor structures.